发布时间:2024-05-27 17:49:26 - 更新时间:2024年06月29日 15:22
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Specification for verification of BJ2970 model high power semiconductor triode tf tester
Technical requirements for aviation semiconductor diodes and triodes
本标准适用于航空半导体二、三极管的可靠性筛选试验
Technical conditions for screening semiconductor diodes and triodes for aviation
Technical screening conditions of semiconductor diodes and triodes for use of ordnance
Semiconductor photocouplers in the transistor mode
Method of measurement for dark current voltage of semiconductor phototransistors
Method of measurement for saturation voltage of semiconductor phototransistors
Semiconductor Device, Triode Thyristor (Bi-Directional), Silicon, Types 2N5806 Through 2N5809
Detail specification for N channel junction field-effect low power switching transistors,Type CS44
Detail specification for N channel junction field-effect low power switching transistors,Type CS37
Detail specification for N channel junction field-effect low power switching transistors,Type CS38
Detail specification for N channel junction field-effect low power switching transistors,Type CS40
Detail specification for N channel junction field-effect low power switching transistors,Type CS48
Detail specification for N channel junction field-effect low power switching transistors,Type CS50
Detail specification for N channel junction field-effect low power switching transistors,Type CS42
Specification for verification of BJ2970 model high power semiconductor triode tf tester
Technical requirements for aviation semiconductor diodes and triodes
本标准适用于航空半导体二、三极管的可靠性筛选试验
Technical conditions for screening semiconductor diodes and triodes for aviation
Technical screening conditions of semiconductor diodes and triodes for use of ordnance
Semiconductor photocouplers in the transistor mode
Method of measurement for dark current voltage of semiconductor phototransistors
Method of measurement for saturation voltage of semiconductor phototransistors
Semiconductor Device, Triode Thyristor (Bi-Directional), Silicon, Types 2N5806 Through 2N5809
Detail specification for N channel junction field-effect low power switching transistors,Type CS44
Detail specification for N channel junction field-effect low power switching transistors,Type CS37
Detail specification for N channel junction field-effect low power switching transistors,Type CS38
Detail specification for N channel junction field-effect low power switching transistors,Type CS40
Detail specification for N channel junction field-effect low power switching transistors,Type CS48
Detail specification for N channel junction field-effect low power switching transistors,Type CS50
Detail specification for N channel junction field-effect low power switching transistors,Type CS42