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半导体三极管检测

发布时间:2024-05-27 17:49:26 - 更新时间:2024年06月29日 15:22

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工业诊断 动物实验 植物学检测 环境试验

JJG(电子) 04023-1989 BJ2970型大功率tf测试仪检定规程

Specification for verification of BJ2970 model high power semiconductor triode tf tester

HB 5831-1983 航空用二、技术要求

Technical requirements for aviation semiconductor diodes and triodes

HB 5832-1983 航空用二、筛选技术条件

本标准适用于航空半导体二、三极管的可靠性筛选试验

Technical conditions for screening semiconductor diodes and triodes for aviation

WJ 1807-2000 兵器用二、筛选技术条件

Technical screening conditions of semiconductor diodes and triodes for use of ordnance

SJ 2219-1982 光敏型光耦合器

Semiconductor photocouplers in the transistor mode

SJ 2214.8-1982 光敏暗电流的测试方法

Method of measurement for dark current voltage of semiconductor phototransistors

SJ 2214.7-1982 光敏饱和压降的测试方法

Method of measurement for saturation voltage of semiconductor phototransistors

DLA MIL-S-19500/438 VALID NOTICE 4-2011 器件,晶闸(双向),硅,2N5806 至 2N5809 型

Semiconductor Device, Triode Thyristor (Bi-Directional), Silicon, Types 2N5806 Through 2N5809

SJ 2101-1982 CS44型N沟道结型场效应小功率开关

Detail specification for N channel junction field-effect low power switching transistors,Type CS44

SJ 2094-1982 CS37型N沟道结型场效应小功率开关

Detail specification for N channel junction field-effect low power switching transistors,Type CS37

SJ 2095-1982 CS38型N沟道结型场效应小功率开关

Detail specification for N channel junction field-effect low power switching transistors,Type CS38

SJ 2097-1982 CS40型N沟道结型场效应小功率开关

Detail specification for N channel junction field-effect low power switching transistors,Type CS40

SJ 2105-1982 CS48型N沟道结型场效应小功率开关

Detail specification for N channel junction field-effect low power switching transistors,Type CS48

SJ 2107-1982 CS50型N沟道结型场效应小功率开关

Detail specification for N channel junction field-effect low power switching transistors,Type CS50

SJ 2099-1982 CS42型N沟道结型场效应小功率开关

Detail specification for N channel junction field-effect low power switching transistors,Type CS42

JJG(电子) 04023-1989 BJ2970型大功率tf测试仪检定规程

Specification for verification of BJ2970 model high power semiconductor triode tf tester

HB 5831-1983 航空用二、技术要求

Technical requirements for aviation semiconductor diodes and triodes

HB 5832-1983 航空用二、筛选技术条件

本标准适用于航空半导体二、三极管的可靠性筛选试验

Technical conditions for screening semiconductor diodes and triodes for aviation

WJ 1807-2000 兵器用二、筛选技术条件

Technical screening conditions of semiconductor diodes and triodes for use of ordnance

SJ 2219-1982 光敏型光耦合器

Semiconductor photocouplers in the transistor mode

SJ 2214.8-1982 光敏暗电流的测试方法

Method of measurement for dark current voltage of semiconductor phototransistors

SJ 2214.7-1982 光敏饱和压降的测试方法

Method of measurement for saturation voltage of semiconductor phototransistors

DLA MIL-S-19500/438 VALID NOTICE 4-2011 器件,晶闸(双向),硅,2N5806 至 2N5809 型

Semiconductor Device, Triode Thyristor (Bi-Directional), Silicon, Types 2N5806 Through 2N5809

SJ 2101-1982 CS44型N沟道结型场效应小功率开关

Detail specification for N channel junction field-effect low power switching transistors,Type CS44

SJ 2094-1982 CS37型N沟道结型场效应小功率开关

Detail specification for N channel junction field-effect low power switching transistors,Type CS37

SJ 2095-1982 CS38型N沟道结型场效应小功率开关

Detail specification for N channel junction field-effect low power switching transistors,Type CS38

SJ 2097-1982 CS40型N沟道结型场效应小功率开关

Detail specification for N channel junction field-effect low power switching transistors,Type CS40

SJ 2105-1982 CS48型N沟道结型场效应小功率开关

Detail specification for N channel junction field-effect low power switching transistors,Type CS48

SJ 2107-1982 CS50型N沟道结型场效应小功率开关

Detail specification for N channel junction field-effect low power switching transistors,Type CS50

SJ 2099-1982 CS42型N沟道结型场效应小功率开关

Detail specification for N channel junction field-effect low power switching transistors,Type CS42

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