功率金属氧化物场效应管（MOSFET）检测

T/CASAS 015-2022 碳化硅金属氧化物半导体场效应晶体管 （SiC MOSFET）功率循环试验方法

碳化硅金属氧化物半导体场效应晶体管(SiC MOSFET)具有阻断电压高、工作频率高、耐高温能力强、通态电阻低和开关损耗小等特点，广泛应用于高频、高压功率系统中。随着电力电子技术的不断发展，越来越多的领域如航天、航空、石油勘探、核能、通信等，迫切需要能够在髙温、高频等极端环境下工作的

Power cycling test method for silicon carbide metal-oxide-semiconductor field-effect-transistor（SiC MOSFET）

EN 62417:2010 半导体器件.金属氧化物半导体场效应晶体管(MOSFET)

Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

SJ/T 11824-2022 金属氧化物半导体场效应晶体管（MOSFET）等效电容和电压变化率测试方法

Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Equivalent Capacitance and Voltage Change Rate Test Method

IEC 62373:2006 金属氧化物半导体场效应管(MOSFET)的基本温度稳定性试验

This International Standard provides a test procedure for a bias-temperature (BT) stability test of metal-oxide semiconductor, field-effect

Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

UNE-EN 62373:2006 金属氧化物、半导体、场效应晶体管(MOSFET)的偏置温度稳定性测试

Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006). (Endorsed by AENOR in November of 2006.)

DIN EN 62373:2007-01 金属氧化物、半导体、场效应晶体管(MOSFET)的偏置温度稳定性测试

Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006

DS/EN 62373:2006 金属氧化物、半导体、场效应晶体管（MOSFET）的偏置温度稳定性测试

This standard provides a test procedure for a bias-temperature (BT) stability test of metal-oxide semiconductor, field-effect transistors (MOSFET

Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

NF EN 62373:2006 金属氧化物半导体场效应晶体管 (MOSFET) 的偏置温度稳定性测试

Essai de stabilité de température en polarisation pour transistors à effet de champ métal-oxyde-semiconducteur (MOSFET)

UNE-EN 62417:2010 半导体器件 金属氧化物半导体场效应晶体管(MOSFET)的移动离子测试

Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (Endorsed by AENOR in September of 2010.)

DIN EN 62417:2010-12 半导体器件 金属氧化物半导体场效应晶体管(MOSFET)的移动离子测试

Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010); German version EN 62417:2010

DIN EN 62373:2007 金属氧化半导体场效应晶体管(MOSFET)的基本温度稳定性试验

This International Standard provides a test procedure for a bias-temperature (BT) stability test of metal-oxide semiconductor, field-effect

Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006

BS EN 62373:2006 金属氧化半导体场效应晶体管(MOSFET)的基本温度稳定性试验

This International Standard provides a test procedure for a bias-temperature (BT) stability test of metal-oxide semiconductor, field-effect

Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

DS/EN 62417:2010 半导体器件 金属氧化物半导体场效应晶体管（MOSFET）的移动离子测试

IEC 62417:2010 provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor

Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

NF EN 62417:2010 半导体器件 - 金属氧化物半导体场效应晶体管 (MOSFET) 的移动离子测试

Dispositifs à semiconducteurs - Essais d'ions mobiles pour transistors à semiconducteur à oxyde métallique à effet de champ (MOSFET)

NF C96-051*NF EN 62373:2006 金属氧化半导体场效应晶体管（MOSFET）的基本温度稳定性试验

Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

T/CASAS 015-2022 碳化硅金属氧化物半导体场效应晶体管 （SiC MOSFET）功率循环试验方法

碳化硅金属氧化物半导体场效应晶体管(SiC MOSFET)具有阻断电压高、工作频率高、耐高温能力强、通态电阻低和开关损耗小等特点，广泛应用于高频、高压功率系统中。随着电力电子技术的不断发展，越来越多的领域如航天、航空、石油勘探、核能、通信等，迫切需要能够在髙温、高频等极端环境下工作的

Power cycling test method for silicon carbide metal-oxide-semiconductor field-effect-transistor（SiC MOSFET）

EN 62417:2010 半导体器件.金属氧化物半导体场效应晶体管(MOSFET)

Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

SJ/T 11824-2022 金属氧化物半导体场效应晶体管（MOSFET）等效电容和电压变化率测试方法

Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Equivalent Capacitance and Voltage Change Rate Test Method

IEC 62373:2006 金属氧化物半导体场效应管(MOSFET)的基本温度稳定性试验

This International Standard provides a test procedure for a bias-temperature (BT) stability test of metal-oxide semiconductor, field-effect

Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

UNE-EN 62373:2006 金属氧化物、半导体、场效应晶体管(MOSFET)的偏置温度稳定性测试

Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006). (Endorsed by AENOR in November of 2006.)

DIN EN 62373:2007-01 金属氧化物、半导体、场效应晶体管(MOSFET)的偏置温度稳定性测试

Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006

DS/EN 62373:2006 金属氧化物、半导体、场效应晶体管（MOSFET）的偏置温度稳定性测试

This standard provides a test procedure for a bias-temperature (BT) stability test of metal-oxide semiconductor, field-effect transistors (MOSFET

Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

NF EN 62373:2006 金属氧化物半导体场效应晶体管 (MOSFET) 的偏置温度稳定性测试

Essai de stabilité de température en polarisation pour transistors à effet de champ métal-oxyde-semiconducteur (MOSFET)

UNE-EN 62417:2010 半导体器件 金属氧化物半导体场效应晶体管(MOSFET)的移动离子测试

Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (Endorsed by AENOR in September of 2010.)

DIN EN 62417:2010-12 半导体器件 金属氧化物半导体场效应晶体管(MOSFET)的移动离子测试

Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010); German version EN 62417:2010

DIN EN 62373:2007 金属氧化半导体场效应晶体管(MOSFET)的基本温度稳定性试验

This International Standard provides a test procedure for a bias-temperature (BT) stability test of metal-oxide semiconductor, field-effect

Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006

BS EN 62373:2006 金属氧化半导体场效应晶体管(MOSFET)的基本温度稳定性试验

This International Standard provides a test procedure for a bias-temperature (BT) stability test of metal-oxide semiconductor, field-effect

Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

DS/EN 62417:2010 半导体器件 金属氧化物半导体场效应晶体管（MOSFET）的移动离子测试

IEC 62417:2010 provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor

Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

NF EN 62417:2010 半导体器件 - 金属氧化物半导体场效应晶体管 (MOSFET) 的移动离子测试

Dispositifs à semiconducteurs - Essais d'ions mobiles pour transistors à semiconducteur à oxyde métallique à effet de champ (MOSFET)

NF C96-051*NF EN 62373:2006 金属氧化半导体场效应晶体管（MOSFET）的基本温度稳定性试验

Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)