SJ/T 10739-1996 半导体集成电路 MOS随机存储器测试方法的基本原理
Semiconductor integrated circuits - General principles of measuring methods for MOS random access memories
AIR FORCE MIL-P-5515 D NOTICE 1-1996 手控随机存储器水力泵
This notice should be filed in fiont of MIL-P-55 15D dated 14 MAR 91
PUMP, HYDRAULIC, RAM, HAND DRIVEN
AIR FORCE MIL-P-5515 D-1991 手控随机存储器水力泵
This specification is approved for use by all Department and Agencies of the Department of Defense
PUMP, HYDRAULIC, RAM, HAND DRIVEN
JEDEC JEB19-1972 MOS移位寄存器的推荐特性
This recommendation applies to MOS Shift Registers. Definitions are given for P-channel r e g i s t e r s but are applicable to a l l CMOS
Recommended Characterization of MOS Shift Registers
HG/T 2373~2376-2017 搪玻璃开式贮存容器、闭式贮存容器、卧式贮存容器和套筒式换热器（2017）
Glass-lined open storage vessels, closed storage vessels, horizontal storage vessels and sleeve heat exchangers (2017)
JJG 600-1989 存贮示波器
Storage Oscilloscope
DLA SMD-5962-95600 REV J-2008 单片硅512Kx8静态随机存取存储器(SRAM),数字存储器微电路
MICROCIRCUITS, MEMORY, DIGITAL, 512K x 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
DLA SMD-5962-95613 REV J-2008 单片硅512Kx8位静态随机存取存储器(SRAM),数字存储器微电路
MICROCIRCUIT, MEMORY, DIGITAL, SRAM, 512K x 8-BIT, MONOLITHIC SILICON
SIS SS CECC 90113-1987 空白详细规范．MOS紫外线光可抹式可编程序只读存贮器硅单片电路
Blank detailspecification: MOS ultra-violet light erasable electrically programmable read only memories silicon monolitic circuits
DLA SMD-5962-86015 REV B-2005 硅单块 64K X1静态随机存取存储器 数字主储存器微型电路
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 1, STATIC RAM, MONOLITHIC SILICON
DLA MIL-M-38510/246 VALID NOTICE 4-2010 微电路、存储器、数字、NMOS、246,144 位、动态随机存取存储器（DRAM）、单片硅
MICROCIRCUITS, MEMORY, DIGITAL, NMOS, 246,144-BIT, DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
DLA SMD-5962-79018 REV D-2012 微电路、存储器、数字、CMOS 128 X 8 位随机存取存储器（RAM）、单片硅
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128 X 8-BIT RANDOM ACCESS MEMORY (RAM), MONOLITHIC SILICON
DLA SMD-5962-94611 REV T-2012 微电路，混合，存储器，数字，512K x 32 位，静态随机存取存储器，CMOS
MICROCIRCUIT, HYBRID, MEMORY, DIGITAL, 512K x 32-BIT, STATIC RANDOM ACCESS MEMORY, CMOS
DLA SMD-5962-96795 REV D-2009 微电路、存储器、数字、256K X 16 静态随机存取存储器（SRAM）、单片硅
MICROCIRCUIT, MEMORY, DIGITAL, 256K X 16 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
DLA SMD-5962-87703 REV A-2006 硅单块 256X9比特随机存取存储器,双极数字主储存器微型电路
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix
MICROCIRCUIT, MEMORY, DIGITAL, BIPOLAR, 256 X 9-BIT RAM, MONOLITHIC SILICON
SJ/T 10739-1996 半导体集成电路 MOS随机存储器测试方法的基本原理
Semiconductor integrated circuits - General principles of measuring methods for MOS random access memories
AIR FORCE MIL-P-5515 D NOTICE 1-1996 手控随机存储器水力泵
This notice should be filed in fiont of MIL-P-55 15D dated 14 MAR 91
PUMP, HYDRAULIC, RAM, HAND DRIVEN
AIR FORCE MIL-P-5515 D-1991 手控随机存储器水力泵
This specification is approved for use by all Department and Agencies of the Department of Defense
PUMP, HYDRAULIC, RAM, HAND DRIVEN
JEDEC JEB19-1972 MOS移位寄存器的推荐特性
This recommendation applies to MOS Shift Registers. Definitions are given for P-channel r e g i s t e r s but are applicable to a l l CMOS
Recommended Characterization of MOS Shift Registers
HG/T 2373~2376-2017 搪玻璃开式贮存容器、闭式贮存容器、卧式贮存容器和套筒式换热器（2017）
Glass-lined open storage vessels, closed storage vessels, horizontal storage vessels and sleeve heat exchangers (2017)
JJG 600-1989 存贮示波器
Storage Oscilloscope
DLA SMD-5962-95600 REV J-2008 单片硅512Kx8静态随机存取存储器(SRAM),数字存储器微电路
MICROCIRCUITS, MEMORY, DIGITAL, 512K x 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
DLA SMD-5962-95613 REV J-2008 单片硅512Kx8位静态随机存取存储器(SRAM),数字存储器微电路
MICROCIRCUIT, MEMORY, DIGITAL, SRAM, 512K x 8-BIT, MONOLITHIC SILICON
SIS SS CECC 90113-1987 空白详细规范．MOS紫外线光可抹式可编程序只读存贮器硅单片电路
Blank detailspecification: MOS ultra-violet light erasable electrically programmable read only memories silicon monolitic circuits
DLA SMD-5962-86015 REV B-2005 硅单块 64K X1静态随机存取存储器 数字主储存器微型电路
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 1, STATIC RAM, MONOLITHIC SILICON
DLA MIL-M-38510/246 VALID NOTICE 4-2010 微电路、存储器、数字、NMOS、246,144 位、动态随机存取存储器（DRAM）、单片硅
MICROCIRCUITS, MEMORY, DIGITAL, NMOS, 246,144-BIT, DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
DLA SMD-5962-79018 REV D-2012 微电路、存储器、数字、CMOS 128 X 8 位随机存取存储器（RAM）、单片硅
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128 X 8-BIT RANDOM ACCESS MEMORY (RAM), MONOLITHIC SILICON
DLA SMD-5962-94611 REV T-2012 微电路，混合，存储器，数字，512K x 32 位，静态随机存取存储器，CMOS
MICROCIRCUIT, HYBRID, MEMORY, DIGITAL, 512K x 32-BIT, STATIC RANDOM ACCESS MEMORY, CMOS
DLA SMD-5962-96795 REV D-2009 微电路、存储器、数字、256K X 16 静态随机存取存储器（SRAM）、单片硅
MICROCIRCUIT, MEMORY, DIGITAL, 256K X 16 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
DLA SMD-5962-87703 REV A-2006 硅单块 256X9比特随机存取存储器,双极数字主储存器微型电路
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix
MICROCIRCUIT, MEMORY, DIGITAL, BIPOLAR, 256 X 9-BIT RAM, MONOLITHIC SILICON
编辑：北检院编辑部
