JC/T 2149-2012 高纯碳化硅粉体成分分析方法
本标准规定了高纯碳化硅粉体中二氧化硅、游离硅、游离碳、铝、砷、钙、铬、铜、铁、钾、镁、锰、钠、镍、铅、钛、锌等的测定方法。本标准适用于碳化硅含量范围为99.9%～99.99%的碳化硅粉体中二氧化硅、游离硅、游离碳、铝、砷、钙、铬、铜、铁、钾、镁、锰、钠、镍、铅、钛、锌等的测定，测定范围见表1
Method for constitution analysis of high purity silicon carbide
T/NXCL 011-2022 窑具用碳化硅微粉技术规范
对生产日用陶瓷、电工陶瓷、建筑陶瓷等陶瓷烧结窑具所用的碳化硅精段砂、细微粉、超细微粉的粒度组成、化学成分、堆积密度和颗粒密度、磁性物质含量等进行了规范，并规定了上述各项目的检验方法和检验规则，便于碳化硅窑具行业内上下游企业统一产品技术指标
Technical specification of silicon carbide powder for kiln furniture
T/NXCL 001-2021 精细陶瓷用亚微米碳化硅微粉
本文件规定了精细陶瓷用亚微米碳化硅微粉的定义、技术要求、试验方法、理化指标、试验方法、检验规则和包装、标志、运输、贮存。确定了本标准适用的亚微米碳化硅粉范围、分类。测定方法及引用文件技术要求和产品检验、取样、包装、运输。亚微米碳化硅微粉在客户应用过程中会首先检查粉体粒径大小和颗粒分布，以及粉体纯度和
Submicron silicon carbide powder for fine ceramics
KS L 1612-1994 精细陶瓷用碳化硅微粉化学分析方法
Methods for chemical analysis of fine silicon carbide powders for fine ceramics
KS L 1612-2016 精细陶瓷用碳化硅微粉化学分析方法
Methods for chemical analysis of fine silicon carbide powders for fine ceramics
KS L 1612-2016(2021 精细陶瓷用碳化硅微粉化学分析方法
Methods for chemical analysis of fine silicon carbide powders for fine ceramics
KS L 1612-2021 精细陶瓷用碳化硅细粉化学分析方法
Methods for chemical analysis of fine silicon carbide powders for fine ceramics
DS/EN 15979:2011 陶瓷原材料检验 直流电弧激发OES直接测定碳化硅粉粒中杂质的质量分数
This European Standard describes the method for the analysis of mass fractions of the impurities Al, B, Ca, Cr, Cu, Fe, Mg, Ni, Ti, V and Zr in powder
Testing of ceramic raw and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by OES by DC arc excitation
LST EN 15979-2011 陶瓷原材料检验 直流电弧激发OES直接测定碳化硅粉粒中杂质的质量分数
Testing of ceramic raw and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by OES by DC arc excitation
JIS R 1616:1994 精细陶瓷用碳化硅细粉末的化学分析方法
Methods for chemical analysis of fine silicon carbide powders for fine ceramics
JIS R 1616:2007 精细陶瓷用碳化硅细粉末的化学分析方法
この規格は，フアインセラミックス製造の原料として用いられる炭化けい素微粉末の化学分析方法について規定する
Methods for chemical analysis of fine silicon carbide powders for fine ceramics
DIN 51088:2007 陶瓷原料和基本材料的测试.用发射光谱测定分析和直流电弧中的激励测定碳化硅粉末和颗粒碳化硅中金属微量杂质的质量分率
This draft standard specifies a method for the determination of metallic trace impurities in silicon carbide powders and granular silicon carbides
Testing of ceramic raw and basic materials - Determination of mass fractions of metallic trace impurities in silicon carbide powders and granular silicon carbides by optical emission spectrometry and excitation in the DC arc
DIN EN 15979:2011-04 陶瓷原材料和基础材料的检测 直流电弧激励OES直接测定碳化硅粉末和颗粒中杂质的质量分数
Testing of ceramic raw and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by OES by DC arc excitation; German version EN 15979:2011
NF EN 15979:2011 陶瓷原料和基材的测试 - 在直流电弧激励下使用 OES 直接测定碳化硅粉末和颗粒中杂质的质量分数
Testing on raw materials and ceramic base materials - Direct determination of mass fractions of impurities in silicon carbide powders and granules by OES with DC arc excitation
EN 15979:2011 陶瓷原料和基本材料的测试.直流电弧激发发射光谱法直接测定碳化硅粉末和颗粒中杂质质量分数
This European Standard describes the method for the analysis of mass fractions of the impurities Al, B, Ca, Cr, Cu, Fe, Mg, Ni, Ti, V and Zr
Testing of ceramic raw and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by OES by DC arc excitation
JC/T 2149-2012 高纯碳化硅粉体成分分析方法
本标准规定了高纯碳化硅粉体中二氧化硅、游离硅、游离碳、铝、砷、钙、铬、铜、铁、钾、镁、锰、钠、镍、铅、钛、锌等的测定方法。本标准适用于碳化硅含量范围为99.9%～99.99%的碳化硅粉体中二氧化硅、游离硅、游离碳、铝、砷、钙、铬、铜、铁、钾、镁、锰、钠、镍、铅、钛、锌等的测定，测定范围见表1
Method for constitution analysis of high purity silicon carbide
T/NXCL 011-2022 窑具用碳化硅微粉技术规范
对生产日用陶瓷、电工陶瓷、建筑陶瓷等陶瓷烧结窑具所用的碳化硅精段砂、细微粉、超细微粉的粒度组成、化学成分、堆积密度和颗粒密度、磁性物质含量等进行了规范，并规定了上述各项目的检验方法和检验规则，便于碳化硅窑具行业内上下游企业统一产品技术指标
Technical specification of silicon carbide powder for kiln furniture
T/NXCL 001-2021 精细陶瓷用亚微米碳化硅微粉
本文件规定了精细陶瓷用亚微米碳化硅微粉的定义、技术要求、试验方法、理化指标、试验方法、检验规则和包装、标志、运输、贮存。确定了本标准适用的亚微米碳化硅粉范围、分类。测定方法及引用文件技术要求和产品检验、取样、包装、运输。亚微米碳化硅微粉在客户应用过程中会首先检查粉体粒径大小和颗粒分布，以及粉体纯度和
Submicron silicon carbide powder for fine ceramics
KS L 1612-1994 精细陶瓷用碳化硅微粉化学分析方法
Methods for chemical analysis of fine silicon carbide powders for fine ceramics
KS L 1612-2016 精细陶瓷用碳化硅微粉化学分析方法
Methods for chemical analysis of fine silicon carbide powders for fine ceramics
KS L 1612-2016(2021 精细陶瓷用碳化硅微粉化学分析方法
Methods for chemical analysis of fine silicon carbide powders for fine ceramics
KS L 1612-2021 精细陶瓷用碳化硅细粉化学分析方法
Methods for chemical analysis of fine silicon carbide powders for fine ceramics
DS/EN 15979:2011 陶瓷原材料检验 直流电弧激发OES直接测定碳化硅粉粒中杂质的质量分数
This European Standard describes the method for the analysis of mass fractions of the impurities Al, B, Ca, Cr, Cu, Fe, Mg, Ni, Ti, V and Zr in powder
Testing of ceramic raw and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by OES by DC arc excitation
LST EN 15979-2011 陶瓷原材料检验 直流电弧激发OES直接测定碳化硅粉粒中杂质的质量分数
Testing of ceramic raw and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by OES by DC arc excitation
JIS R 1616:1994 精细陶瓷用碳化硅细粉末的化学分析方法
Methods for chemical analysis of fine silicon carbide powders for fine ceramics
JIS R 1616:2007 精细陶瓷用碳化硅细粉末的化学分析方法
この規格は，フアインセラミックス製造の原料として用いられる炭化けい素微粉末の化学分析方法について規定する
Methods for chemical analysis of fine silicon carbide powders for fine ceramics
DIN 51088:2007 陶瓷原料和基本材料的测试.用发射光谱测定分析和直流电弧中的激励测定碳化硅粉末和颗粒碳化硅中金属微量杂质的质量分率
This draft standard specifies a method for the determination of metallic trace impurities in silicon carbide powders and granular silicon carbides
Testing of ceramic raw and basic materials - Determination of mass fractions of metallic trace impurities in silicon carbide powders and granular silicon carbides by optical emission spectrometry and excitation in the DC arc
DIN EN 15979:2011-04 陶瓷原材料和基础材料的检测 直流电弧激励OES直接测定碳化硅粉末和颗粒中杂质的质量分数
Testing of ceramic raw and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by OES by DC arc excitation; German version EN 15979:2011
NF EN 15979:2011 陶瓷原料和基材的测试 - 在直流电弧激励下使用 OES 直接测定碳化硅粉末和颗粒中杂质的质量分数
Testing on raw materials and ceramic base materials - Direct determination of mass fractions of impurities in silicon carbide powders and granules by OES with DC arc excitation
EN 15979:2011 陶瓷原料和基本材料的测试.直流电弧激发发射光谱法直接测定碳化硅粉末和颗粒中杂质质量分数
This European Standard describes the method for the analysis of mass fractions of the impurities Al, B, Ca, Cr, Cu, Fe, Mg, Ni, Ti, V and Zr
Testing of ceramic raw and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by OES by DC arc excitation
编辑：北检院编辑部
