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RELIABILITY ASSURED FIELD-EFFECT TRANSISTORS
This specification establishes guideline requirements and quality assurance provisions for gallium arsenide power field-effect transistors (FETs
Transistor, Gallium Arsenide Power Fet, Generic Specification
Reliability assured field-effect transistors
Letter symbohfor semiconductor devices. Bipolar andfield-effect transistors.
To be read in conjunction with IEC 60747-1
Discrete semiconductor devices and integrated circuits - Field-effect transistors - Additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors
Schválenie ST SEV 3413-81 odporu?ilo Federálně ministerstvo elektrotechnického priemyslu. Spracovatel: TESLA Pie??any, k. p., Ing. Jozef Walla
Field effect transistors. Electric Parameter. Measurement Methods
Field-eftec? transis?ors Measuring method Ga?? current Icdo
Transistors bipolar and field-effect. Basic parameters
Field-effect transistors. Noise figure measurement technique
Настоящий стандарт распространяется на маломощные полевые транзисторы и устанавливает метод измерения крутизны характеристики S
Field-effect transistors. Forward transconductance measurement technique
Blank detail specification: single gate field-effect transistors
Termsand definitions for semiconductor devices. Bipolar and field-effect transistors.
This part of IEC 60747 gives standards for the following categories of field-effect transistors: - type A: junction-gate type; - type B
Semiconductor devices - Part 8: Field-effect transistors
이 규격은 반도체 소자 중 다음에 해당하는 전계 효과 트랜지스터에 관한 표준을 규정한다
Discrete devices－Part 8：Field－effect transistors
Semiconductor devices. Discrete devices. Field-effect transistors
RELIABILITY ASSURED FIELD-EFFECT TRANSISTORS
This specification establishes guideline requirements and quality assurance provisions for gallium arsenide power field-effect transistors (FETs
Transistor, Gallium Arsenide Power Fet, Generic Specification
Reliability assured field-effect transistors
Letter symbohfor semiconductor devices. Bipolar andfield-effect transistors.
To be read in conjunction with IEC 60747-1
Discrete semiconductor devices and integrated circuits - Field-effect transistors - Additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors
Schválenie ST SEV 3413-81 odporu?ilo Federálně ministerstvo elektrotechnického priemyslu. Spracovatel: TESLA Pie??any, k. p., Ing. Jozef Walla
Field effect transistors. Electric Parameter. Measurement Methods
Field-eftec? transis?ors Measuring method Ga?? current Icdo
Transistors bipolar and field-effect. Basic parameters
Field-effect transistors. Noise figure measurement technique
Настоящий стандарт распространяется на маломощные полевые транзисторы и устанавливает метод измерения крутизны характеристики S
Field-effect transistors. Forward transconductance measurement technique
Blank detail specification: single gate field-effect transistors
Termsand definitions for semiconductor devices. Bipolar and field-effect transistors.
This part of IEC 60747 gives standards for the following categories of field-effect transistors: - type A: junction-gate type; - type B
Semiconductor devices - Part 8: Field-effect transistors
이 규격은 반도체 소자 중 다음에 해당하는 전계 효과 트랜지스터에 관한 표준을 규정한다
Discrete devices－Part 8：Field－effect transistors
Semiconductor devices. Discrete devices. Field-effect transistors
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