KS C 5202-1980(2000 可靠性保证场效应晶体管
RELIABILITY ASSURED FIELD-EFFECT TRANSISTORS
JEDEC JES2-1992 电晶体,砷化镓场效应晶体管,总规范
This specification establishes guideline requirements and quality assurance provisions for gallium arsenide power field-effect transistors (FETs
Transistor, Gallium Arsenide Power Fet, Generic Specification
JIS C7214-1978 有可靠性保证的场效应晶体管
Reliability assured field-effect transistors
JUS N.R1.353-1979 半导体装置的字母符号．双极场效应和场效应晶体管
Letter symbohfor semiconductor devices. Bipolar andfield-effect transistors.
BS IEC 60747-8:2001 分立半导体器件和集成电路.场效应晶体管.电源转换场效应晶体管测量方法中附加功率、特性和amds
To be read in conjunction with IEC 60747-1
Discrete semiconductor devices and integrated circuits - Field-effect transistors - Additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors
CSN 35 8803-1983 场效应晶体管．电气参数．测量方法
Schválenie ST SEV 3413-81 odporu?ilo Federálně ministerstvo elektrotechnického priemyslu. Spracovatel: TESLA Pie??any, k. p., Ing. Jozef Walla
Field effect transistors. Electric Parameter. Measurement Methods
PN T01505 ArkusZ06-1974 场效应晶体管栅电流测量方法 Icdo
Field-eftec? transis?ors Measuring method Ga?? current Icdo
GOST 17466-1980 双极型和场效应晶体管.基本参数
Transistors bipolar and field-effect. Basic parameters
GOST 20398.2-1974 场效应晶体管.噪声系数测量方法
Field-effect transistors. Noise figure measurement technique
GOST 20398.3-1974 场效应晶体管.特性曲线测量方法
Настоящий стандарт распространяется на маломощные полевые транзисторы и устанавливает метод измерения крутизны характеристики S
Field-effect transistors. Forward transconductance measurement technique
EN 150012:1991 空白详细规范.单栅场效应晶体管
Blank detail specification: single gate field-effect transistors
JUS N.R1.323-1979 半导体装置的术语及定义．双极场效应及场效应晶体管
Termsand definitions for semiconductor devices. Bipolar and field-effect transistors.
IEC 60747-8:2000 半导体装置.第8部分:场效应晶体管
This part of IEC 60747 gives standards for the following categories of field-effect transistors: - type A: junction-gate type; - type B
Semiconductor devices - Part 8: Field-effect transistors
KS C IEC 60747-8:2002 半导体器件.第8部分:场效应晶体管
이 규격은 반도체 소자 중 다음에 해당하는 전계 효과 트랜지스터에 관한 표준을 규정한다
Discrete devices－Part 8：Field－effect transistors
BS IEC 60747-8:2010 半导体装置.分立器件.场效应晶体管
Semiconductor devices. Discrete devices. Field-effect transistors
KS C 5202-1980(2000 可靠性保证场效应晶体管
RELIABILITY ASSURED FIELD-EFFECT TRANSISTORS
JEDEC JES2-1992 电晶体,砷化镓场效应晶体管,总规范
This specification establishes guideline requirements and quality assurance provisions for gallium arsenide power field-effect transistors (FETs
Transistor, Gallium Arsenide Power Fet, Generic Specification
JIS C7214-1978 有可靠性保证的场效应晶体管
Reliability assured field-effect transistors
JUS N.R1.353-1979 半导体装置的字母符号．双极场效应和场效应晶体管
Letter symbohfor semiconductor devices. Bipolar andfield-effect transistors.
BS IEC 60747-8:2001 分立半导体器件和集成电路.场效应晶体管.电源转换场效应晶体管测量方法中附加功率、特性和amds
To be read in conjunction with IEC 60747-1
Discrete semiconductor devices and integrated circuits - Field-effect transistors - Additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors
CSN 35 8803-1983 场效应晶体管．电气参数．测量方法
Schválenie ST SEV 3413-81 odporu?ilo Federálně ministerstvo elektrotechnického priemyslu. Spracovatel: TESLA Pie??any, k. p., Ing. Jozef Walla
Field effect transistors. Electric Parameter. Measurement Methods
PN T01505 ArkusZ06-1974 场效应晶体管栅电流测量方法 Icdo
Field-eftec? transis?ors Measuring method Ga?? current Icdo
GOST 17466-1980 双极型和场效应晶体管.基本参数
Transistors bipolar and field-effect. Basic parameters
GOST 20398.2-1974 场效应晶体管.噪声系数测量方法
Field-effect transistors. Noise figure measurement technique
GOST 20398.3-1974 场效应晶体管.特性曲线测量方法
Настоящий стандарт распространяется на маломощные полевые транзисторы и устанавливает метод измерения крутизны характеристики S
Field-effect transistors. Forward transconductance measurement technique
EN 150012:1991 空白详细规范.单栅场效应晶体管
Blank detail specification: single gate field-effect transistors
JUS N.R1.323-1979 半导体装置的术语及定义．双极场效应及场效应晶体管
Termsand definitions for semiconductor devices. Bipolar and field-effect transistors.
IEC 60747-8:2000 半导体装置.第8部分:场效应晶体管
This part of IEC 60747 gives standards for the following categories of field-effect transistors: - type A: junction-gate type; - type B
Semiconductor devices - Part 8: Field-effect transistors
KS C IEC 60747-8:2002 半导体器件.第8部分:场效应晶体管
이 규격은 반도체 소자 중 다음에 해당하는 전계 효과 트랜지스터에 관한 표준을 규정한다
Discrete devices－Part 8：Field－effect transistors
BS IEC 60747-8:2010 半导体装置.分立器件.场效应晶体管
Semiconductor devices. Discrete devices. Field-effect transistors
编辑：北检院编辑部
