JEDEC JEP69-B-1973 场效应管用优先引脚外形
The material contained in this publication was formulated under the cognizance of the JC-24 Committee on Low Power Transistors, This publication
Preferred Lead Configurations for Field-Effect Transistors
JJG(电子) 04006-1987 BJ2913型场效应管参数测试仪试行检定规程
DLA SMD-5962-01512-2001 单片硅双高速线性微电路场效应管驱动器
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class
MICROCIRCUIT, LINEAR, DUAL, HIGH SPEED, FET DRIVER, MONOLITHIC SILICON
DLA SMD-5962-01520 REV B-2003 单片硅线性微电路高电流场效应管驱动器
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix
MICROCIRCUIT, LINEAR, HIGH CURRENT FET DRIVER, MONOLITHIC SILICON
GOST 19095-1973 场效应管.电参数.术语，定义和参数的字母符号
Field effect transistors. Terms, definitions and parameter symbols
IEC 62373:2006 金属氧化物半导体场效应管(MOSFET)的基本温度稳定性试验
This International Standard provides a test procedure for a bias-temperature (BT) stability test of metal-oxide semiconductor, field-effect
Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
NF C80-203*NF EN 62417:2010 半导体器件.金属氧化物半导体场效应管(MOSFETs)移动离子试验
Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs).
IEC 62417:2010 半导体器件.金属氧化物半导体场效应管(MOSFETs)移动离子试验
This present standard provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide
Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
DLA SMD-5962-00521 REV D-2003 单片硅辐射硬化数字非线性微电路互补开关场效应管驱动器
This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class
MICROCIRCUIT, DIGITAL-LINEAR, RADIATION HARDENED, COMPLEMENTARY SWITCH FET DRIVER, MONOLITHIC SILICON
JUS N.R1.353-1979 半导体装置的字母符号．双极场效应和场效应晶体管
Letter symbohfor semiconductor devices. Bipolar andfield-effect transistors.
JUS N.R1.323-1979 半导体装置的术语及定义．双极场效应及场效应晶体管
Termsand definitions for semiconductor devices. Bipolar and field-effect transistors.
KS C 5202-1980(2000 可靠性保证场效应晶体管
RELIABILITY ASSURED FIELD-EFFECT TRANSISTORS
BS IEC 60747-8:2001 分立半导体器件和集成电路.场效应晶体管.电源转换场效应晶体管测量方法中附加功率、特性和amds
To be read in conjunction with IEC 60747-1
Discrete semiconductor devices and integrated circuits - Field-effect transistors - Additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors
JIS C7214-1978 有可靠性保证的场效应晶体管
Reliability assured field-effect transistors
CSN 35 8803-1983 场效应晶体管．电气参数．测量方法
Schválenie ST SEV 3413-81 odporu?ilo Federálně ministerstvo elektrotechnického priemyslu. Spracovatel: TESLA Pie??any, k. p., Ing. Jozef Walla
Field effect transistors. Electric Parameter. Measurement Methods
JEDEC JEP69-B-1973 场效应管用优先引脚外形
The material contained in this publication was formulated under the cognizance of the JC-24 Committee on Low Power Transistors, This publication
Preferred Lead Configurations for Field-Effect Transistors
JJG(电子) 04006-1987 BJ2913型场效应管参数测试仪试行检定规程
DLA SMD-5962-01512-2001 单片硅双高速线性微电路场效应管驱动器
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class
MICROCIRCUIT, LINEAR, DUAL, HIGH SPEED, FET DRIVER, MONOLITHIC SILICON
DLA SMD-5962-01520 REV B-2003 单片硅线性微电路高电流场效应管驱动器
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix
MICROCIRCUIT, LINEAR, HIGH CURRENT FET DRIVER, MONOLITHIC SILICON
GOST 19095-1973 场效应管.电参数.术语，定义和参数的字母符号
Field effect transistors. Terms, definitions and parameter symbols
IEC 62373:2006 金属氧化物半导体场效应管(MOSFET)的基本温度稳定性试验
This International Standard provides a test procedure for a bias-temperature (BT) stability test of metal-oxide semiconductor, field-effect
Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
NF C80-203*NF EN 62417:2010 半导体器件.金属氧化物半导体场效应管(MOSFETs)移动离子试验
Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs).
IEC 62417:2010 半导体器件.金属氧化物半导体场效应管(MOSFETs)移动离子试验
This present standard provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide
Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
DLA SMD-5962-00521 REV D-2003 单片硅辐射硬化数字非线性微电路互补开关场效应管驱动器
This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class
MICROCIRCUIT, DIGITAL-LINEAR, RADIATION HARDENED, COMPLEMENTARY SWITCH FET DRIVER, MONOLITHIC SILICON
JUS N.R1.353-1979 半导体装置的字母符号．双极场效应和场效应晶体管
Letter symbohfor semiconductor devices. Bipolar andfield-effect transistors.
JUS N.R1.323-1979 半导体装置的术语及定义．双极场效应及场效应晶体管
Termsand definitions for semiconductor devices. Bipolar and field-effect transistors.
KS C 5202-1980(2000 可靠性保证场效应晶体管
RELIABILITY ASSURED FIELD-EFFECT TRANSISTORS
BS IEC 60747-8:2001 分立半导体器件和集成电路.场效应晶体管.电源转换场效应晶体管测量方法中附加功率、特性和amds
To be read in conjunction with IEC 60747-1
Discrete semiconductor devices and integrated circuits - Field-effect transistors - Additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors
JIS C7214-1978 有可靠性保证的场效应晶体管
Reliability assured field-effect transistors
CSN 35 8803-1983 场效应晶体管．电气参数．测量方法
Schválenie ST SEV 3413-81 odporu?ilo Federálně ministerstvo elektrotechnického priemyslu. Spracovatel: TESLA Pie??any, k. p., Ing. Jozef Walla
Field effect transistors. Electric Parameter. Measurement Methods
编辑：北检院编辑部
