调整二极管检测

BS IEC 60747-3:2013 半导体器件.分立器件:信号二极管、开关二极管及调整二极管

Semiconductor devices. Discrete devices: Signal, switching and regulator diodes

GB/T 6589-2002 半导体器件 分立器件 第3-2部分;信号(包括开关)和调整二极管电压调整二极管和电压基准二极管(不包括温度补偿精密基准二极管)空白详细规范

本空白详细规范是半导体器件的一系列空白详细规范之一，并应与下列国家标准和IEC标准一起使用。 GB／T12560--1999半导体器件分立器件分规范(idt IEC 60747—11：1985) IEC 60747—10(QC 700000)：1991 半导体器件第l0部分分立器件和

Semiconductor devices discrete devices Part 3-2: Signal (including switching) and regulator diodes blank detail specification for voltage-regulator diodes and voltage-reference diodes (excluding temperature-compensated precision reference diodes)

IEC 60747-3:2013 半导体器件.第3部分:分立器件:信号二极管、开关二极管及调整二极管

This part of IEC 60747 gives the requirements for the following devices: ?C signal diodes (excluding diodes designed to operate at frequencies above

Semiconductor devices - Part 3: Discrete devices: Signal, switching and regulator diodes

IEC 60747-3-2:1986 半导体器件 分立器件 第3部分:信号二极管(包括开关二极管)及调整二极管 第2节:电压调整二极管和电压基准二极管(不包括温度补偿精密基准二极管)空白详细规范

Applicable to quality assessment for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference

Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section Two: Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference d

GB 9595-1988 电子元器件详细规范 2CW412~473型硅电压调整二极管

IEC 60747-3:1985 半导体器件 分立器件 第3部分:信号二极管(包括开关二极管)及调整二极管

Deals with terminology and letter symbols, essential ratings and characteristics, measuring methods, acceptance and reliability, completing

Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes.

SJ 50033/161-2002 半导体分立器件.2CW210～251型硅电压调整二极管.详细规范

Semiconductor discrete device Detail specification for silicon voltage-regulator diode for type 2CW210～251

SJ 20186-1992 半导体分立器件2CW2970～3015型硅电压调整二极管详细规范

Semiconductor discrete device--Detail specification for silicon voltage regulate diodes for Types 2CW2970～3015

SJ 50033/25-1994 半导体分立器件2CW1001～2CW1005型硅电压调整二极管详细规范

Semiconductor discrete device Detail specification for type 2CW1001～2CW1005 silicon voltage-regulator diode

SJ 20188-1992 半导体分立器件2CW3016～3051型电压调整二极管详细规范

Semiconductor discrete device--Detail specification for silicon voltage regulate diodes for Types 2CWl3016～3051

SJ 50033/162-2003 半导体分立器件2CW1022型硅双向电压调整二极管详细规范

Semiconductor discrete device Detail specification of type 2CW1022 for silicon bidirectional voltage regulator diodes

SJ 50033/26-1994 半导体分立器件.2CW1006～2CW1015型硅电压调整二极管详细规范

Semiconductor discrete device.Detail specification for type 2CW1006～2CW1015 silicon voltage-regulator diode

IEC 60747-3/AMD1:1991 半导体器件 分立器件 第3部分:信号二极管(包括开关二极管)及调整二极管 修改1

Replaces the existing sub-clauses: 2.4.3 (on page 17), 1.3 and 1.4 (on page 23), 1.2 (on page 25), 1.3 (on page 27) and 4.1 (on page 51

Semiconductor devices; discrete devices; part 3: signal (including switching) and regulator diodes; amendment 1

IEC 60747-3/AMD2:1993 半导体器件 分立器件 第3部分:信号二极管(包括开关二极管)及调整二极管 修改2

Replaces clause 2 (Terms related to ratings and characteristics) and subclause 3.4.3 (Forward recovery time), amends the table in subclause 3.3

Semiconductor devices; discrete devices; part 3: signal (including switching) and regulator diodes; amendment 2

GJB/Z 41.2-1993 军用半导体分立器件系列型谱 信号、开关和调整二极管

BS IEC 60747-3:2013 半导体器件.分立器件:信号二极管、开关二极管及调整二极管

Semiconductor devices. Discrete devices: Signal, switching and regulator diodes

GB/T 6589-2002 半导体器件 分立器件 第3-2部分;信号(包括开关)和调整二极管电压调整二极管和电压基准二极管(不包括温度补偿精密基准二极管)空白详细规范

本空白详细规范是半导体器件的一系列空白详细规范之一，并应与下列国家标准和IEC标准一起使用。 GB／T12560--1999半导体器件分立器件分规范(idt IEC 60747—11：1985) IEC 60747—10(QC 700000)：1991 半导体器件第l0部分分立器件和

Semiconductor devices discrete devices Part 3-2: Signal (including switching) and regulator diodes blank detail specification for voltage-regulator diodes and voltage-reference diodes (excluding temperature-compensated precision reference diodes)

IEC 60747-3:2013 半导体器件.第3部分:分立器件:信号二极管、开关二极管及调整二极管

This part of IEC 60747 gives the requirements for the following devices: ?C signal diodes (excluding diodes designed to operate at frequencies above

Semiconductor devices - Part 3: Discrete devices: Signal, switching and regulator diodes

IEC 60747-3-2:1986 半导体器件 分立器件 第3部分:信号二极管(包括开关二极管)及调整二极管 第2节:电压调整二极管和电压基准二极管(不包括温度补偿精密基准二极管)空白详细规范

Applicable to quality assessment for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference

Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section Two: Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference d

GB 9595-1988 电子元器件详细规范 2CW412~473型硅电压调整二极管

IEC 60747-3:1985 半导体器件 分立器件 第3部分:信号二极管(包括开关二极管)及调整二极管

Deals with terminology and letter symbols, essential ratings and characteristics, measuring methods, acceptance and reliability, completing

Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes.

SJ 50033/161-2002 半导体分立器件.2CW210～251型硅电压调整二极管.详细规范

Semiconductor discrete device Detail specification for silicon voltage-regulator diode for type 2CW210～251

SJ 20186-1992 半导体分立器件2CW2970～3015型硅电压调整二极管详细规范

Semiconductor discrete device--Detail specification for silicon voltage regulate diodes for Types 2CW2970～3015

SJ 50033/25-1994 半导体分立器件2CW1001～2CW1005型硅电压调整二极管详细规范

Semiconductor discrete device Detail specification for type 2CW1001～2CW1005 silicon voltage-regulator diode

SJ 20188-1992 半导体分立器件2CW3016～3051型电压调整二极管详细规范

Semiconductor discrete device--Detail specification for silicon voltage regulate diodes for Types 2CWl3016～3051

SJ 50033/162-2003 半导体分立器件2CW1022型硅双向电压调整二极管详细规范

Semiconductor discrete device Detail specification of type 2CW1022 for silicon bidirectional voltage regulator diodes

SJ 50033/26-1994 半导体分立器件.2CW1006～2CW1015型硅电压调整二极管详细规范

Semiconductor discrete device.Detail specification for type 2CW1006～2CW1015 silicon voltage-regulator diode

IEC 60747-3/AMD1:1991 半导体器件 分立器件 第3部分:信号二极管(包括开关二极管)及调整二极管 修改1

Replaces the existing sub-clauses: 2.4.3 (on page 17), 1.3 and 1.4 (on page 23), 1.2 (on page 25), 1.3 (on page 27) and 4.1 (on page 51

Semiconductor devices; discrete devices; part 3: signal (including switching) and regulator diodes; amendment 1

IEC 60747-3/AMD2:1993 半导体器件 分立器件 第3部分:信号二极管(包括开关二极管)及调整二极管 修改2

Replaces clause 2 (Terms related to ratings and characteristics) and subclause 3.4.3 (Forward recovery time), amends the table in subclause 3.3

Semiconductor devices; discrete devices; part 3: signal (including switching) and regulator diodes; amendment 2

GJB/Z 41.2-1993 军用半导体分立器件系列型谱 信号、开关和调整二极管