SJ/T 11701-2018 通用NAND型快闪存储器接口
GB/T 35009-2018 串行NAND型快闪存储器接口规范
Specification for serial NAND flash interface
GB/T 35008-2018 串行NOR型快闪存储器接口规范
Specification for serial NOR flash interface
GB/T 36477-2018 半导体集成电路 快闪存储器测试方法
本标准规定了半导体集成电路快闪存储器电参数、时间参数和存储单元功能测试的基本方法。 本标准适用于半导体集成电路领域中快闪存储器电参数、时间参数和存储单元功能的测试
Semiconductor integrated circuit.Measuring methods for flash memory
T/ZS 0329-2022 快闪存储卡
前言 1 范围 2 规范性引用文件 3 术语和定义 4 要求 4.1 外观和结构 4.2 功能要求 4.3 性能要求
Flash memory card
GB/T 26225-2010 信息技术 移动存储 闪存盘通用规范
本标准规定了闪存盘的术语和定义、要求、试验方法、检验规则、标志、包装、运输、贮存等相关内容。 本标准适用于闪存盘，其他包含闪存盘功能模块的设备也可参考
Information technology.Mobile storage.General specification of flash disk
GB/T 36614-2018 集成电路 存储器引出端排列
Integrated circuits—Memory devices pin configuration
IRAM 9515-1962 符合存储器
DIN 6625-2:2013 闪点大于55℃地上存储液体用角钢储罐.第2部分:计算
Angular steel tanks for above ground storage of liquids with a flashpoint of more than 55 °C - Part 2: Calculation
NAVY MIL-S-82397-1970 小型武器射击快闪噪音模拟器
This specification covers one type of small arms gunfire flash-noise siniulator
SIMULATOR, SMALL ARMS GUNFIRE FLASH-NOISE
DLA SMD-5962-95600 REV J-2008 单片硅512Kx8静态随机存取存储器(SRAM),数字存储器微电路
MICROCIRCUITS, MEMORY, DIGITAL, 512K x 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
IEEE 1212.1-1993 处理器和外围设备中共享存储器的传送(直接存储器存取DMA)
Describes a DMA Framework that provides recommended architectures for high-performance interfaces between Functions and System Memory, connected
Standard for Communicating Among Processors and Peripherals Using Shared Memory (Direct Memory Access - DMA) (IEEE Computer Society Document)
DLA SMD-5962-95613 REV J-2008 单片硅512Kx8位静态随机存取存储器(SRAM),数字存储器微电路
MICROCIRCUIT, MEMORY, DIGITAL, SRAM, 512K x 8-BIT, MONOLITHIC SILICON
DLA SMD-5962-88725 REV C-2007 硅单片256K X 1静态存取存储器数字存储微电路
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 256K X 1 SRAM, MONOLITHIC SILICON
DLA SMD-5962-86015 REV B-2005 硅单块 64K X1静态随机存取存储器 数字主储存器微型电路
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 1, STATIC RAM, MONOLITHIC SILICON
SJ/T 11701-2018 通用NAND型快闪存储器接口
GB/T 35009-2018 串行NAND型快闪存储器接口规范
Specification for serial NAND flash interface
GB/T 35008-2018 串行NOR型快闪存储器接口规范
Specification for serial NOR flash interface
GB/T 36477-2018 半导体集成电路 快闪存储器测试方法
本标准规定了半导体集成电路快闪存储器电参数、时间参数和存储单元功能测试的基本方法。 本标准适用于半导体集成电路领域中快闪存储器电参数、时间参数和存储单元功能的测试
Semiconductor integrated circuit.Measuring methods for flash memory
T/ZS 0329-2022 快闪存储卡
前言 1 范围 2 规范性引用文件 3 术语和定义 4 要求 4.1 外观和结构 4.2 功能要求 4.3 性能要求
Flash memory card
GB/T 26225-2010 信息技术 移动存储 闪存盘通用规范
本标准规定了闪存盘的术语和定义、要求、试验方法、检验规则、标志、包装、运输、贮存等相关内容。 本标准适用于闪存盘，其他包含闪存盘功能模块的设备也可参考
Information technology.Mobile storage.General specification of flash disk
GB/T 36614-2018 集成电路 存储器引出端排列
Integrated circuits—Memory devices pin configuration
IRAM 9515-1962 符合存储器
DIN 6625-2:2013 闪点大于55℃地上存储液体用角钢储罐.第2部分:计算
Angular steel tanks for above ground storage of liquids with a flashpoint of more than 55 °C - Part 2: Calculation
NAVY MIL-S-82397-1970 小型武器射击快闪噪音模拟器
This specification covers one type of small arms gunfire flash-noise siniulator
SIMULATOR, SMALL ARMS GUNFIRE FLASH-NOISE
DLA SMD-5962-95600 REV J-2008 单片硅512Kx8静态随机存取存储器(SRAM),数字存储器微电路
MICROCIRCUITS, MEMORY, DIGITAL, 512K x 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
IEEE 1212.1-1993 处理器和外围设备中共享存储器的传送(直接存储器存取DMA)
Describes a DMA Framework that provides recommended architectures for high-performance interfaces between Functions and System Memory, connected
Standard for Communicating Among Processors and Peripherals Using Shared Memory (Direct Memory Access - DMA) (IEEE Computer Society Document)
DLA SMD-5962-95613 REV J-2008 单片硅512Kx8位静态随机存取存储器(SRAM),数字存储器微电路
MICROCIRCUIT, MEMORY, DIGITAL, SRAM, 512K x 8-BIT, MONOLITHIC SILICON
DLA SMD-5962-88725 REV C-2007 硅单片256K X 1静态存取存储器数字存储微电路
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 256K X 1 SRAM, MONOLITHIC SILICON
DLA SMD-5962-86015 REV B-2005 硅单块 64K X1静态随机存取存储器 数字主储存器微型电路
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 1, STATIC RAM, MONOLITHIC SILICON
编辑：北检院编辑部
