SRAM型现场可编程门阵列检测

ANSI/VITA 57.1-2010 现场可编程门阵列中间层卡(FMC)标准

This specification describes FMC IO modules and introduces an electro-mechanical standard that creates a low overhead protocol bridge between front

FPGA Mezzanine Card (FMC) Standard

DLA SMD-5962-99527 REV A-2007 微型电路,带记忆力,数字型,CMOS,现场可编程门阵列,20000门,单块硅

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 20,000 GATES, MONOLITHIC SILICON

DLA SMD-5962-99569 REV C-2007 微型电路,带记忆力,数字型,CMOS,现场可编程门阵列,16000门,单块硅

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 16,000 GATES, MONOLITHIC SILICON

DLA SMD-5962-99585 REV A-2007 微型电路,带记忆力,数字型,CMOS,现场可编程门阵列,36000门,单块硅

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 36,000 GATES, MONOLITHIC SILICON

DLA SMD-5962-99586 REV C-2007 微型电路,带记忆力,数字型,CMOS,现场可编程门阵列,32000门,单块硅

This drawing documents two product assurance class levels consisting of high reliability (device classes Q andM) and space application (device class V

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 32,000 GATES, MONOLITHIC SILICON

SJ/T 11706-2018 半导体集成电路 现场可编程门阵列测试方法

DLA SMD-5962-00543 REV C-2003 72,000门单片硅数字存储器微电路 CMOS 现场可编程门阵列

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 72,000 GATES, MONOLITHIC SILICON

DLA SMD-5962-01508 REV D-2005 32,000门单片硅数字存储器微电路CMOS 现场可编程门阵列,

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 32,000 GATES, MONOLITHIC SILICON

DLA SMD-5962-01515 REV E-2005 72,000门单片硅数字存储器微电路 CMOS 现场可编程门阵列

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 72,000 GATES, MONOLITHIC SILICON

DLA SMD-5962-01518 REV D-2006 单片硅32,000门数字存储器微电路CMOS 现场可编程门阵列

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 32,000 GATES, MONOLITHIC SILICON

DLA SMD-5962-98579-1999 微型电路,带记忆力,数字型,CMOS,现场程序门阵列,10000门,单块硅

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 10,000 GATES, MONOLITHIC SILICON

DLA SMD-5962-88504 REV D-2006 硅单片现场可编程逻辑阵列(FPLA)两极化数字微电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix

MICROCIRCUIT, DIGITAL, BIPOLAR, FIELD PROGRAMMABLE, LOGIC ARRAY (FPLA), MONOLITHIC SILICON

DLA SMD-5962-92156 REV J-2007 硅单块 800门场可编程门阵列,互补金属氧化物半导体,主储存器微型电路

Add 04 and 05 devices, change case outlines from CQCC2-F172 to figure 4. Page 3, section 1.3 changed TJ from 175°C to 150°C. Added appendix

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 8000 GATES, MONOLITHIC SILICON

DLA SMD-5962-90964 REV B-2007 硅单块 1200门场可编程门阵列,互补金属氧化物半导体,数字主储存器微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 1200 GATES, MONOLITHIC SILICON

DLA SMD-5962-90965 REV G-2005 硅单块 2000门场可编程门阵列,互补金属氧化物半导体,数字主储存器微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 2,000 GATES, MONOLITHIC SILICON

ANSI/VITA 57.1-2010 现场可编程门阵列中间层卡(FMC)标准

This specification describes FMC IO modules and introduces an electro-mechanical standard that creates a low overhead protocol bridge between front

FPGA Mezzanine Card (FMC) Standard

DLA SMD-5962-99527 REV A-2007 微型电路,带记忆力,数字型,CMOS,现场可编程门阵列,20000门,单块硅

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 20,000 GATES, MONOLITHIC SILICON

DLA SMD-5962-99569 REV C-2007 微型电路,带记忆力,数字型,CMOS,现场可编程门阵列,16000门,单块硅

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 16,000 GATES, MONOLITHIC SILICON

DLA SMD-5962-99585 REV A-2007 微型电路,带记忆力,数字型,CMOS,现场可编程门阵列,36000门,单块硅

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 36,000 GATES, MONOLITHIC SILICON

DLA SMD-5962-99586 REV C-2007 微型电路,带记忆力,数字型,CMOS,现场可编程门阵列,32000门,单块硅

This drawing documents two product assurance class levels consisting of high reliability (device classes Q andM) and space application (device class V

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 32,000 GATES, MONOLITHIC SILICON

SJ/T 11706-2018 半导体集成电路 现场可编程门阵列测试方法

DLA SMD-5962-00543 REV C-2003 72,000门单片硅数字存储器微电路 CMOS 现场可编程门阵列

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 72,000 GATES, MONOLITHIC SILICON

DLA SMD-5962-01508 REV D-2005 32,000门单片硅数字存储器微电路CMOS 现场可编程门阵列,

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 32,000 GATES, MONOLITHIC SILICON

DLA SMD-5962-01515 REV E-2005 72,000门单片硅数字存储器微电路 CMOS 现场可编程门阵列

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 72,000 GATES, MONOLITHIC SILICON

DLA SMD-5962-01518 REV D-2006 单片硅32,000门数字存储器微电路CMOS 现场可编程门阵列

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 32,000 GATES, MONOLITHIC SILICON

DLA SMD-5962-98579-1999 微型电路,带记忆力,数字型,CMOS,现场程序门阵列,10000门,单块硅

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 10,000 GATES, MONOLITHIC SILICON

DLA SMD-5962-88504 REV D-2006 硅单片现场可编程逻辑阵列(FPLA)两极化数字微电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix

MICROCIRCUIT, DIGITAL, BIPOLAR, FIELD PROGRAMMABLE, LOGIC ARRAY (FPLA), MONOLITHIC SILICON

DLA SMD-5962-92156 REV J-2007 硅单块 800门场可编程门阵列,互补金属氧化物半导体,主储存器微型电路

Add 04 and 05 devices, change case outlines from CQCC2-F172 to figure 4. Page 3, section 1.3 changed TJ from 175°C to 150°C. Added appendix

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 8000 GATES, MONOLITHIC SILICON

DLA SMD-5962-90964 REV B-2007 硅单块 1200门场可编程门阵列,互补金属氧化物半导体,数字主储存器微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 1200 GATES, MONOLITHIC SILICON

DLA SMD-5962-90965 REV G-2005 硅单块 2000门场可编程门阵列,互补金属氧化物半导体,数字主储存器微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 2,000 GATES, MONOLITHIC SILICON