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微波二端口器件检测

发布时间:2024-05-27 17:49:26 - 更新时间:2024年06月29日 15:22

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军工检测 其他检测

SJ 50033.48-1994 半导体分立.2DV8CP型硅极管详细规范

Semiconductor discrete device.Detail specification for type 2DV8CP silicon microwave detector diode

GJB 1557A-2021 半导体分立 极管外形尺寸

GJB 1557-1992 半导体分立 级管外形尺寸

QJ 2782-1995 术语

KS C IEC 60747-4:2006 半导体.分立.第4部分:极管和晶体管

이 규격은 다음과 같은 반도체 개별 소자에 관한 표준을 규정한다.-가변 커패시턴스 다이

Semiconductor devices-Discrete devices-Part 4:Microwave diodes and transistors

KS C IEC 60747-4:2022 半导体.分立.第4部分:极管和晶体管

Semiconductor devices — Discrete devices — Part 4: Microwave diodes and transistors

KS C IEC 60747-4:2017 半导体分立第4部分:极管和晶体管

Semiconductor devices-Discrete devices-Part 4:Microwave diodes and transistors

IEC 60747-4:1991 半导体 分立 第4部分:极管和晶体管

Gives standards for the following discrete devices: - variable capacitance diodes and snap-off diodes; - mixer diodes and detector diodes; - avalanche

Semiconductor devices; discrete devices; part 4: microwave diodes and transistors

GB/T 21039.1-2007 半导体 分立 第4-1部分:极管和晶体管 场效应晶体管空白详细规范

本空白详细规范是半导体器件的一系列空白详细规范之一,并应与下列国家标准一起使用

Semiconductor devices Discrete devices Part 4-1: Microwave diodes and transistors-Microwave field effect transistors Blank detail specification

QJ 1886-1990 通用技术条

特种器件

GJB/Z 41.1-1993 军用半导体分立系列型谱 极管

IEC 60747-4-2:2000 半导体 分立 第4-2部分:极管和晶体管 集成电路放大 空白详细规范

Semiconductor devices - Discrete devices - Part 4-2: Microwave diodes and transistors - Integrated-circuit microwave amplifiers - Blank detail specification

KS C IEC 60747-4-2-2002(2017 半导体分立第4-2部分:极管和晶体管集成电路放大空白详细规范

Semiconductor devices-Discrete devices-Part 4-2:Microwave diodes and transistors-Integrated-circuit microwave amplifiers-Blank detail specification

KS C IEC 60747-4-2-2002(2022 半导体分立第4-2部分:极管和晶体管集成电路放大空白详细规范

Semiconductor devices-Discrete devices-Part 4-2:Microwave diodes and transistors-Integrated-circuit microwave amplifiers-Blank detail specification

QJ 2733-1995 图形符号

SJ 50033.48-1994 半导体分立.2DV8CP型硅极管详细规范

Semiconductor discrete device.Detail specification for type 2DV8CP silicon microwave detector diode

GJB 1557A-2021 半导体分立 极管外形尺寸

GJB 1557-1992 半导体分立 级管外形尺寸

QJ 2782-1995 术语

KS C IEC 60747-4:2006 半导体.分立.第4部分:极管和晶体管

이 규격은 다음과 같은 반도체 개별 소자에 관한 표준을 규정한다.-가변 커패시턴스 다이

Semiconductor devices-Discrete devices-Part 4:Microwave diodes and transistors

KS C IEC 60747-4:2022 半导体.分立.第4部分:极管和晶体管

Semiconductor devices — Discrete devices — Part 4: Microwave diodes and transistors

KS C IEC 60747-4:2017 半导体分立第4部分:极管和晶体管

Semiconductor devices-Discrete devices-Part 4:Microwave diodes and transistors

IEC 60747-4:1991 半导体 分立 第4部分:极管和晶体管

Gives standards for the following discrete devices: - variable capacitance diodes and snap-off diodes; - mixer diodes and detector diodes; - avalanche

Semiconductor devices; discrete devices; part 4: microwave diodes and transistors

GB/T 21039.1-2007 半导体 分立 第4-1部分:极管和晶体管 场效应晶体管空白详细规范

本空白详细规范是半导体器件的一系列空白详细规范之一,并应与下列国家标准一起使用

Semiconductor devices Discrete devices Part 4-1: Microwave diodes and transistors-Microwave field effect transistors Blank detail specification

QJ 1886-1990 通用技术条

特种器件

GJB/Z 41.1-1993 军用半导体分立系列型谱 极管

IEC 60747-4-2:2000 半导体 分立 第4-2部分:极管和晶体管 集成电路放大 空白详细规范

Semiconductor devices - Discrete devices - Part 4-2: Microwave diodes and transistors - Integrated-circuit microwave amplifiers - Blank detail specification

KS C IEC 60747-4-2-2002(2017 半导体分立第4-2部分:极管和晶体管集成电路放大空白详细规范

Semiconductor devices-Discrete devices-Part 4-2:Microwave diodes and transistors-Integrated-circuit microwave amplifiers-Blank detail specification

KS C IEC 60747-4-2-2002(2022 半导体分立第4-2部分:极管和晶体管集成电路放大空白详细规范

Semiconductor devices-Discrete devices-Part 4-2:Microwave diodes and transistors-Integrated-circuit microwave amplifiers-Blank detail specification

QJ 2733-1995 图形符号

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