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半导体分立器件寿命评价试验检测

发布时间:2024-05-27 17:49:26 - 更新时间:2024年06月29日 15:22

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JEDEC JESD74A-2007 的早期寿故障运计算程序

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GJB 128-1986 方法

本标准规定了军用地形图测量航空摄影装备、器材、技术、成果质量和成果管理的基本要求。本标准适用于测制与更新1:10 000~1:100 000基本比例尺军用地形图的黑白胶片航空摄影、彩色胶片航空摄影、数字航空摄影

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GB/T 249-2017 型号名方法

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GB/T 249-1989 型号名方法

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The rule of type designation for discrete semiconductor devices

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This test is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating

Semiconductor devices - Mechanical and climatic test methods - High temperature operating life

BS EN 60749-23:2004+A1:2011 .机械和气候方法.高温使用寿

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Semiconductor devices-Mechanical and climatic test methods-Part 23:High temperature operating life

DB61/T 1448-2021 大功率间歇寿规程

本文件规定了大功率半导体分立器件(以下简称器件)间歇寿命试验的术语和定义、试验系统、试 验程序、失效判据及试验报告的要求。 本文件适用于大功率双极型晶体管、场效应晶体管、绝缘栅场效应晶体管、二极管等半导体分立器 件的间歇寿命试验

T/ZAQ 10113-2022 间歇工作寿设备

本文件规定了半导体器件间歇工作寿命试验设备(以下简称寿命试验设备)的术语和定义、基本参数、技术要求、试验方法、检验规则、标志、使用说明书、包装、运输和贮存

JEITA EDR-4704A-2007 用加速寿的应用指南

Recent progresses in science and technology have brought electronic devices closer to our daily life. With respect to the lifecycles of the electronic

Application guide of the accelerated life test for semiconductor devices

JEDEC JESD74A-2007 的早期寿故障运计算程序

Early life failure rate (ELFR) measurement of a product is typically performed during product qualifications or as part of ongoing product

Early Life Failure Rate Calculation Procedure for Semiconductor Components

GJB 128-1986 方法

本标准规定了军用地形图测量航空摄影装备、器材、技术、成果质量和成果管理的基本要求。本标准适用于测制与更新1:10 000~1:100 000基本比例尺军用地形图的黑白胶片航空摄影、彩色胶片航空摄影、数字航空摄影

Aerial photographic specification for military topographic mapping

GB/T 249-2017 型号名方法

The rule of type designation for discrete semiconductor devices

GB/T 249-1989 型号名方法

本标准规定了半导体分立器件型号的命名方法。 本标准适用于各种半导体分立器件

The rule of type designation for discrete semiconductor devices

GJB 128B-2021 方法

GJB 128A-1997 方法

BS EN 60749-23:2004 .机械和气候方法.高温操作寿

This test is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating

Semiconductor devices - Mechanical and climatic test methods - High temperature operating life

BS EN 60749-23:2004+A1:2011 .机械和气候方法.高温使用寿

This test is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating

Semiconductor devices. Mechanical and climatic test methods. High temperature operating life

BS IEC 60747-14-4:2011 ..加速

Semiconductor devices. Discrete devices. Semiconductor accelerometers

QJ 1511A-1998 收规范

BS IEC 60747-6:2016 ..闸流管

Semiconductor devices. Discrete devices. Thyristors

KS C IEC 60749-23:2006 .机械和气候方法.第23部:高温操作寿

이 시험은 시간이 지남에 따라 바이어스 조건과 온도가 고체 상태 소자에 미치는 영향을 알아

Semiconductor devices-Mechanical and climatic test methods-Part 23:High temperature operating life

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