GB/T 6571-1995 半导体器件 分立器件 第3部分:信号(包括开关)和调整二极管
本标准等同采用国际标准IEC 747-3-1985《半导体器件 分立器件 第3部分：信号（包括开关）和调整二极管》及其第1次修订（1991
Semiconductor devices--Discrete devices. Part 3: Signal(including switching)and regulator diodes
TIS 1597-1999 半导体器件.分立器件.第3部分:信号(包括开关)和调整二极管
Semiconductor devices.discrete devices.part 3: signal (including switching) and regulator diodes
GB/T 6588-2000 半导体器件 分立器件 第3部分;信号(包括开关)和调整二极管 第一篇 信号二极管、开关二极管和可控雪崩二极管空白详细规范
本空白详细规范是半导体器件的一系列空白详细规范之一，并应与下列国家标准一起使用。 GB/T 4589.1-1989 半导体器件 分立器件和集成电路总规范（idt IEC 747-10:1984） GB/T 12560-1999 半导体器件 分立器件分规范（idt IEC
Semiconductor devices Discrete devices Part 3: Signal(including switching) and regulator diodes Section One--Blank detail specification for signal diodes,switching diodes and controlled-avalanche diodes
GB/T 6589-2002 半导体器件 分立器件 第3-2部分;信号(包括开关)和调整二极管电压调整二极管和电压基准二极管(不包括温度补偿精密基准二极管)空白详细规范
本空白详细规范是半导体器件的一系列空白详细规范之一，并应与下列国家标准和IEC标准一起使用。 GB／T12560--1999半导体器件分立器件分规范(idt IEC 60747—11：1985) IEC 60747—10(QC 700000)：1991 半导体器件第l0部分分立器件和
Semiconductor devices discrete devices Part 3-2: Signal (including switching) and regulator diodes blank detail specification for voltage-regulator diodes and voltage-reference diodes (excluding temperature-compensated precision reference diodes)
IEC 60747-3:1985 半导体器件 分立器件 第3部分:信号二极管(包括开关二极管)及调整二极管
Deals with terminology and letter symbols, essential ratings and characteristics, measuring methods, acceptance and reliability, completing
Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes.
IEC 60747-3-1:1986 半导体器件 分立器件 第3部分:信号二极管(包括开关二极管)及调整二极管 第1节:信号二极管、开关二极管和可控雪崩二极管空白详细规范
Applicable to quality assessment for signal diodes, switching diodes and controlled avalanche diodes. Gives specific requirements (included in QC
Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section One: Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes
IEC 60747-3/AMD1:1991 半导体器件 分立器件 第3部分:信号二极管(包括开关二极管)及调整二极管 修改1
Replaces the existing sub-clauses: 2.4.3 (on page 17), 1.3 and 1.4 (on page 23), 1.2 (on page 25), 1.3 (on page 27) and 4.1 (on page 51
Semiconductor devices; discrete devices; part 3: signal (including switching) and regulator diodes; amendment 1
IEC 60747-3/AMD2:1993 半导体器件 分立器件 第3部分:信号二极管(包括开关二极管)及调整二极管 修改2
Replaces clause 2 (Terms related to ratings and characteristics) and subclause 3.4.3 (Forward recovery time), amends the table in subclause 3.3
Semiconductor devices; discrete devices; part 3: signal (including switching) and regulator diodes; amendment 2
KS C IEC 60747-3-1:2006 半导体器件.分立器件.第3部分:信号二极管(包括开关二极管)和调节二极管.第1节:信号二极管、开关二极管和受控雪崩二极管空白详细规范
이 규격은 신호 다이오드, 스위칭 다이오드 및 제어 애벌란시 다이오드의 개별 규격 지침에
Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section one：Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes
IEC 60747-3-2:1986 半导体器件 分立器件 第3部分:信号二极管(包括开关二极管)及调整二极管 第2节:电压调整二极管和电压基准二极管(不包括温度补偿精密基准二极管)空白详细规范
Applicable to quality assessment for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference
Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section Two: Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference d
BS IEC 60747-3:2013 半导体器件.分立器件:信号二极管、开关二极管及调整二极管
Semiconductor devices. Discrete devices: Signal, switching and regulator diodes
KS C IEC 60747-3-1-2006(2021 半导体器件分立器件第3部分:信号（包括开关）和调节二极管第一节:信号二极管、开关二极管和受控雪崩二极管空白详细规范
Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section one：Blank detail specification for signal diodes, switching diodes and controlled-avalanche diod
KS C IEC 60747-3-2016(2021 半导体器件分立器件第3部分:信号（包括开关）和调节二极管
Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes
DS/IEC 747-3-1:1987 半导体器件．分立器件．第3部分：信号（包括开关）和调节器二极管．第1子部分：信号二极管，开关二极管和可控雪崩二极管的空白详细规范
Semiconductor devices - Discrete devices - Part 3: Signal (including switching) and regulator diodes - Section 1: Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes
KS C IEC 60747-3:2006 半导体器件.分立器件.第3部分:信号二极管(包括开关二极管和稳压二极管)
이 규격은 반도체 소자 중 다음과 같은 다이오드에 대한 표준을 제공한다.-신호 다이오드
Semiconductor devices-Discrete devices-Part 3:Signal (including switching) and regulator diodes
GB/T 6571-1995 半导体器件 分立器件 第3部分:信号(包括开关)和调整二极管
本标准等同采用国际标准IEC 747-3-1985《半导体器件 分立器件 第3部分：信号（包括开关）和调整二极管》及其第1次修订（1991
Semiconductor devices--Discrete devices. Part 3: Signal(including switching)and regulator diodes
TIS 1597-1999 半导体器件.分立器件.第3部分:信号(包括开关)和调整二极管
Semiconductor devices.discrete devices.part 3: signal (including switching) and regulator diodes
GB/T 6588-2000 半导体器件 分立器件 第3部分;信号(包括开关)和调整二极管 第一篇 信号二极管、开关二极管和可控雪崩二极管空白详细规范
本空白详细规范是半导体器件的一系列空白详细规范之一，并应与下列国家标准一起使用。 GB/T 4589.1-1989 半导体器件 分立器件和集成电路总规范（idt IEC 747-10:1984） GB/T 12560-1999 半导体器件 分立器件分规范（idt IEC
Semiconductor devices Discrete devices Part 3: Signal(including switching) and regulator diodes Section One--Blank detail specification for signal diodes,switching diodes and controlled-avalanche diodes
GB/T 6589-2002 半导体器件 分立器件 第3-2部分;信号(包括开关)和调整二极管电压调整二极管和电压基准二极管(不包括温度补偿精密基准二极管)空白详细规范
本空白详细规范是半导体器件的一系列空白详细规范之一，并应与下列国家标准和IEC标准一起使用。 GB／T12560--1999半导体器件分立器件分规范(idt IEC 60747—11：1985) IEC 60747—10(QC 700000)：1991 半导体器件第l0部分分立器件和
Semiconductor devices discrete devices Part 3-2: Signal (including switching) and regulator diodes blank detail specification for voltage-regulator diodes and voltage-reference diodes (excluding temperature-compensated precision reference diodes)
IEC 60747-3:1985 半导体器件 分立器件 第3部分:信号二极管(包括开关二极管)及调整二极管
Deals with terminology and letter symbols, essential ratings and characteristics, measuring methods, acceptance and reliability, completing
Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes.
IEC 60747-3-1:1986 半导体器件 分立器件 第3部分:信号二极管(包括开关二极管)及调整二极管 第1节:信号二极管、开关二极管和可控雪崩二极管空白详细规范
Applicable to quality assessment for signal diodes, switching diodes and controlled avalanche diodes. Gives specific requirements (included in QC
Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section One: Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes
IEC 60747-3/AMD1:1991 半导体器件 分立器件 第3部分:信号二极管(包括开关二极管)及调整二极管 修改1
Replaces the existing sub-clauses: 2.4.3 (on page 17), 1.3 and 1.4 (on page 23), 1.2 (on page 25), 1.3 (on page 27) and 4.1 (on page 51
Semiconductor devices; discrete devices; part 3: signal (including switching) and regulator diodes; amendment 1
IEC 60747-3/AMD2:1993 半导体器件 分立器件 第3部分:信号二极管(包括开关二极管)及调整二极管 修改2
Replaces clause 2 (Terms related to ratings and characteristics) and subclause 3.4.3 (Forward recovery time), amends the table in subclause 3.3
Semiconductor devices; discrete devices; part 3: signal (including switching) and regulator diodes; amendment 2
KS C IEC 60747-3-1:2006 半导体器件.分立器件.第3部分:信号二极管(包括开关二极管)和调节二极管.第1节:信号二极管、开关二极管和受控雪崩二极管空白详细规范
이 규격은 신호 다이오드, 스위칭 다이오드 및 제어 애벌란시 다이오드의 개별 규격 지침에
Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section one：Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes
IEC 60747-3-2:1986 半导体器件 分立器件 第3部分:信号二极管(包括开关二极管)及调整二极管 第2节:电压调整二极管和电压基准二极管(不包括温度补偿精密基准二极管)空白详细规范
Applicable to quality assessment for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference
Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section Two: Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference d
BS IEC 60747-3:2013 半导体器件.分立器件:信号二极管、开关二极管及调整二极管
Semiconductor devices. Discrete devices: Signal, switching and regulator diodes
KS C IEC 60747-3-1-2006(2021 半导体器件分立器件第3部分:信号（包括开关）和调节二极管第一节:信号二极管、开关二极管和受控雪崩二极管空白详细规范
Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section one：Blank detail specification for signal diodes, switching diodes and controlled-avalanche diod
KS C IEC 60747-3-2016(2021 半导体器件分立器件第3部分:信号（包括开关）和调节二极管
Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes
DS/IEC 747-3-1:1987 半导体器件．分立器件．第3部分：信号（包括开关）和调节器二极管．第1子部分：信号二极管，开关二极管和可控雪崩二极管的空白详细规范
Semiconductor devices - Discrete devices - Part 3: Signal (including switching) and regulator diodes - Section 1: Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes
KS C IEC 60747-3:2006 半导体器件.分立器件.第3部分:信号二极管(包括开关二极管和稳压二极管)
이 규격은 반도체 소자 중 다음과 같은 다이오드에 대한 표준을 제공한다.-신호 다이오드
Semiconductor devices-Discrete devices-Part 3:Signal (including switching) and regulator diodes
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