发布时间：2024-05-27 17:49:26 - 更新时间：2024年06月29日 15:22
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Detailed specifications for electronic components - 4CS142 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification)
Detailed specifications for electronic components - 4CS103 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification)
Detailed specifications for electronic components - 4CS1191 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification)
Detailed specifications for electronic components - 4CS1421 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification)
Detailed specifications for electronic components - 4CS122 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification)
Detailed specifications for electronic components - 4CS119 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification)
本标准规定了工作频率在10到40kHz范围的快速型绝缘栅双极型晶体管的型号、外形尺寸、额定值、特性、试验方法和检验规则等
Insulated gate bipolar transistor
Blank detail specification: single gate field-effect transistors
Field-eftec? transis?ors Measuring method Ga?? current Icdo
Measuring methods for insulated-gate bipolar transistor
本空白详细规范规定了制订硅双栅场效应晶体管详细规范的基本原则，制订该范围内的所有详细规范应与本空白详细规范一致
Blank detail specification for silicon dual-qute field-effect transistors
本标准规定了工作频率在10到40kHz范围的快速型绝缘栅双极型晶体管的臂和臂对模块的型号、外形尺寸、额定值和特性、试验方法和检验规则等
Insulated gate bipolar transistor modules arm and pair of arms
本文件规定了绝缘栅双极型晶体管（简称 IGBT）用有机硅凝胶的技术要求、试验方法、检验规则、标志、包装、运输和贮存。 本文件适用于各种IGBT模块用的双组分加成型有机硅凝胶
本检定规程规定了国洋双栅场效应晶体管Yfs测试仪的检定条件、检定项目、检定方法，检定结果处理及检定周期。 本检定规程适用于国洋双栅场效应晶体管Yfs测试仪的检定
Verification regulation of KDK double gate FET Yfs tester
Detailed specifications for electronic components - 4CS142 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification)
Detailed specifications for electronic components - 4CS103 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification)
Detailed specifications for electronic components - 4CS1191 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification)
Detailed specifications for electronic components - 4CS1421 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification)
Detailed specifications for electronic components - 4CS122 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification)
Detailed specifications for electronic components - 4CS119 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification)
本标准规定了工作频率在10到40kHz范围的快速型绝缘栅双极型晶体管的型号、外形尺寸、额定值、特性、试验方法和检验规则等
Insulated gate bipolar transistor
Blank detail specification: single gate field-effect transistors
Field-eftec? transis?ors Measuring method Ga?? current Icdo
Measuring methods for insulated-gate bipolar transistor
本空白详细规范规定了制订硅双栅场效应晶体管详细规范的基本原则，制订该范围内的所有详细规范应与本空白详细规范一致
Blank detail specification for silicon dual-qute field-effect transistors
本标准规定了工作频率在10到40kHz范围的快速型绝缘栅双极型晶体管的臂和臂对模块的型号、外形尺寸、额定值和特性、试验方法和检验规则等
Insulated gate bipolar transistor modules arm and pair of arms
本文件规定了绝缘栅双极型晶体管（简称 IGBT）用有机硅凝胶的技术要求、试验方法、检验规则、标志、包装、运输和贮存。 本文件适用于各种IGBT模块用的双组分加成型有机硅凝胶
本检定规程规定了国洋双栅场效应晶体管Yfs测试仪的检定条件、检定项目、检定方法，检定结果处理及检定周期。 本检定规程适用于国洋双栅场效应晶体管Yfs测试仪的检定
Verification regulation of KDK double gate FET Yfs tester
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