GB/T 20641-2006 低压成套开关设备和控制设备空壳体的一般要求
本标准适用于由壳体制造商提供的空壳体(以下简称壳体),该壳体是用户在安装开关设备和控制设备元件之前的产品。 本标准规定了符合GB 7251系列标准的低压成套开关设备和控制设备所用壳体的定义、分类、性能和试验要求。该低压成套开关设备和控制设备的额定电压为交流不超过100OV,频率不
Empty enclosures for low-voltage switchgear and controlgear assemblies General requirements
GB/T 20641-2014 低压成套开关设备和控制设备 空壳体的一般要求
本标准适用于由壳体制造商提供的、在用户安装开关设备和控制设备元件之前的空壳体(以下简称壳体)。本标准规定了低压成套开关设备和控制设备(例如符合IEC 61439系列)所用的壳体的定义、分类、性能和试验要求。其额定电压为交流不超过1 000 V或直流不超过1 500 V,适用于户内或户外应用。本标准
Empty enclosures for low-voltage switchgear and controlgear assemblies.General requirements
GOST R 52796-2007 低压开关装置与控制装置设备空壳体.一般要求
Empty enclosures for low-voltage switchgear and controlgear assemblies. General requirements
T/ZJCX 0032-2022 真空助力器用铁制壳体
本文件规定了真空助力器用铁制壳体的术语和定义、产品组成、技术要求、试验方法、检验规则、标志、包装、运输和贮存。 本文件适用于汽车真空助力器用框架结构类铁制壳体零部件
Iron housing for vacuum booster
STAS 3734-1971 架空电力线路.锌外壳导体
1.1. Prezentul standard se refera la conductoarele din s?rme de o?el zineat, de sec?iune circular?, mul?ii ilare, denumite curent
Ovci'lH'iid power linos ZTNC-COATFD STRFJ. CONDUC- TOR S
T/CAMS 141-2023 空调轴流风机用电机壳体 技术规范
规定了空调轴流风机用电机壳体的技术要求,描述了对应的证实方法
Air conditioning motor housing for axial flow fan-Technical specifications
GB/T 11493-1989 半导体集成电路外壳空白详细规范
Blank detail specification of packages for semiconductor integrated circuits
SIS SS CECC 50011-1983 空白详细规范.壳额定闸流晶体管
Blank detail specification: Case-rated thyristors
AECMA PREN 3218-001-1995 航空航天系列.用金属壳体和螺旋锁模矩形连接器 001部分:技术规格
This draft is now available for public comment and your views and technical comments on it would be appreciated. If you have no specific comments
Aerospace Series Connector, Rectangular, with Metallic Shells and Screw-Locking Part 001 : Technical Specification Edition P 1
NF L54-210:1989 航空器材 连续使用温度175℃短壳体、旋插式连接的圆形电连接器、
Conectors, electrical, circular, bayonnet coupling. Operating temperature 175 degrees celsius continuous duty. Short shell.
NAVY QPL-17588-QPD-2012 (海军舰船用)交流和直流电120V及以下的带绝缘壳体的空气触发器(非自动- NLB-1断路器)的断路器(自动- ALB-1)和开关
Circuit Breakers (Automatic - ALB-1) and Switch, Toggle (Circuit Breaker, Non-Automatic - NLB-1) Air, Insulated Housing, 125 Volts and Below A.C. and D.C., (Naval Shipboard Use)
DS/IEC 747-7-4:1993 半导体装置.分立器件.第7部分:双极晶体管.第4节:高频放大管壳额定双极晶体管空白详细规范
Semiconductor devices. Discrete devices. Part 7: Bipolar transistors. Section four: Blank detail specification for case-rated bipolar transistors for high-frequency amplification
KS C IEC 60747-7-4-2006(2021 半导体器件分立器件第7部分:双极晶体管第四节:高频放大用外壳额定双极晶体管空白详细规范
Semiconductor devices-Discrete devices-Part 7:Bipolar transistors-Section Four:Blank detail specification for case-rated bipolar transistors for high-frequency amplification
KS C IEC 60747-7-4-2006(2016 半导体器件分立器件第7部分:双极晶体管第4节:高频放大用外壳额定双极晶体管空白详细规范
Semiconductor devices-Discrete devices-Part 7:Bipolar transistors-Section Four:Blank detail specification for case-rated bipolar transistors for high-frequency amplification
KS C IEC 60747-7-2-2006(2016 半导体器件分立器件第7部分:双极晶体管第2节:低频放大用外壳额定双极晶体管空白详细规范
Semiconductor devices-Discrete devices-Part 7:Bipolar transistors-Section Two:Blank detail specification for case-rated bipolar transistors for low-frequency amplification
GB/T 20641-2006 低压成套开关设备和控制设备空壳体的一般要求
本标准适用于由壳体制造商提供的空壳体(以下简称壳体),该壳体是用户在安装开关设备和控制设备元件之前的产品。 本标准规定了符合GB 7251系列标准的低压成套开关设备和控制设备所用壳体的定义、分类、性能和试验要求。该低压成套开关设备和控制设备的额定电压为交流不超过100OV,频率不
Empty enclosures for low-voltage switchgear and controlgear assemblies General requirements
GB/T 20641-2014 低压成套开关设备和控制设备 空壳体的一般要求
本标准适用于由壳体制造商提供的、在用户安装开关设备和控制设备元件之前的空壳体(以下简称壳体)。本标准规定了低压成套开关设备和控制设备(例如符合IEC 61439系列)所用的壳体的定义、分类、性能和试验要求。其额定电压为交流不超过1 000 V或直流不超过1 500 V,适用于户内或户外应用。本标准
Empty enclosures for low-voltage switchgear and controlgear assemblies.General requirements
GOST R 52796-2007 低压开关装置与控制装置设备空壳体.一般要求
Empty enclosures for low-voltage switchgear and controlgear assemblies. General requirements
T/ZJCX 0032-2022 真空助力器用铁制壳体
本文件规定了真空助力器用铁制壳体的术语和定义、产品组成、技术要求、试验方法、检验规则、标志、包装、运输和贮存。 本文件适用于汽车真空助力器用框架结构类铁制壳体零部件
Iron housing for vacuum booster
STAS 3734-1971 架空电力线路.锌外壳导体
1.1. Prezentul standard se refera la conductoarele din s?rme de o?el zineat, de sec?iune circular?, mul?ii ilare, denumite curent
Ovci'lH'iid power linos ZTNC-COATFD STRFJ. CONDUC- TOR S
T/CAMS 141-2023 空调轴流风机用电机壳体 技术规范
规定了空调轴流风机用电机壳体的技术要求,描述了对应的证实方法
Air conditioning motor housing for axial flow fan-Technical specifications
GB/T 11493-1989 半导体集成电路外壳空白详细规范
Blank detail specification of packages for semiconductor integrated circuits
SIS SS CECC 50011-1983 空白详细规范.壳额定闸流晶体管
Blank detail specification: Case-rated thyristors
AECMA PREN 3218-001-1995 航空航天系列.用金属壳体和螺旋锁模矩形连接器 001部分:技术规格
This draft is now available for public comment and your views and technical comments on it would be appreciated. If you have no specific comments
Aerospace Series Connector, Rectangular, with Metallic Shells and Screw-Locking Part 001 : Technical Specification Edition P 1
NF L54-210:1989 航空器材 连续使用温度175℃短壳体、旋插式连接的圆形电连接器、
Conectors, electrical, circular, bayonnet coupling. Operating temperature 175 degrees celsius continuous duty. Short shell.
NAVY QPL-17588-QPD-2012 (海军舰船用)交流和直流电120V及以下的带绝缘壳体的空气触发器(非自动- NLB-1断路器)的断路器(自动- ALB-1)和开关
Circuit Breakers (Automatic - ALB-1) and Switch, Toggle (Circuit Breaker, Non-Automatic - NLB-1) Air, Insulated Housing, 125 Volts and Below A.C. and D.C., (Naval Shipboard Use)
DS/IEC 747-7-4:1993 半导体装置.分立器件.第7部分:双极晶体管.第4节:高频放大管壳额定双极晶体管空白详细规范
Semiconductor devices. Discrete devices. Part 7: Bipolar transistors. Section four: Blank detail specification for case-rated bipolar transistors for high-frequency amplification
KS C IEC 60747-7-4-2006(2021 半导体器件分立器件第7部分:双极晶体管第四节:高频放大用外壳额定双极晶体管空白详细规范
Semiconductor devices-Discrete devices-Part 7:Bipolar transistors-Section Four:Blank detail specification for case-rated bipolar transistors for high-frequency amplification
KS C IEC 60747-7-4-2006(2016 半导体器件分立器件第7部分:双极晶体管第4节:高频放大用外壳额定双极晶体管空白详细规范
Semiconductor devices-Discrete devices-Part 7:Bipolar transistors-Section Four:Blank detail specification for case-rated bipolar transistors for high-frequency amplification
KS C IEC 60747-7-2-2006(2016 半导体器件分立器件第7部分:双极晶体管第2节:低频放大用外壳额定双极晶体管空白详细规范
Semiconductor devices-Discrete devices-Part 7:Bipolar transistors-Section Two:Blank detail specification for case-rated bipolar transistors for low-frequency amplification
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