发布时间:2024-05-27 17:49:26 - 更新时间:2024年06月29日 15:22
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本标准适用于由壳体制造商提供的空壳体(以下简称壳体),该壳体是用户在安装开关设备和控制设备元件之前的产品。 本标准规定了符合GB 7251系列标准的低压成套开关设备和控制设备所用壳体的定义、分类、性能和试验要求。该低压成套开关设备和控制设备的额定电压为交流不超过100OV,频率不
Empty enclosures for low-voltage switchgear and controlgear assemblies General requirements
本标准适用于由壳体制造商提供的、在用户安装开关设备和控制设备元件之前的空壳体(以下简称壳体)。本标准规定了低压成套开关设备和控制设备(例如符合IEC 61439系列)所用的壳体的定义、分类、性能和试验要求。其额定电压为交流不超过1 000 V或直流不超过1 500 V,适用于户内或户外应用。本标准
Empty enclosures for low-voltage switchgear and controlgear assemblies.General requirements
Empty enclosures for low-voltage switchgear and controlgear assemblies. General requirements
本文件规定了真空助力器用铁制壳体的术语和定义、产品组成、技术要求、试验方法、检验规则、标志、包装、运输和贮存。 本文件适用于汽车真空助力器用框架结构类铁制壳体零部件
Iron housing for vacuum booster
1.1. Prezentul standard se refera la conductoarele din s?rme de o?el zineat, de sec?iune circular?, mul?ii ilare, denumite curent
Ovci'lH'iid power linos ZTNC-COATFD STRFJ. CONDUC- TOR S
规定了空调轴流风机用电机壳体的技术要求,描述了对应的证实方法
Air conditioning motor housing for axial flow fan-Technical specifications
Blank detail specification of packages for semiconductor integrated circuits
Blank detail specification: Case-rated thyristors
This draft is now available for public comment and your views and technical comments on it would be appreciated. If you have no specific comments
Aerospace Series Connector, Rectangular, with Metallic Shells and Screw-Locking Part 001 : Technical Specification Edition P 1
Conectors, electrical, circular, bayonnet coupling. Operating temperature 175 degrees celsius continuous duty. Short shell.
Circuit Breakers (Automatic - ALB-1) and Switch, Toggle (Circuit Breaker, Non-Automatic - NLB-1) Air, Insulated Housing, 125 Volts and Below A.C. and D.C., (Naval Shipboard Use)
Semiconductor devices. Discrete devices. Part 7: Bipolar transistors. Section four: Blank detail specification for case-rated bipolar transistors for high-frequency amplification
Semiconductor devices-Discrete devices-Part 7:Bipolar transistors-Section Four:Blank detail specification for case-rated bipolar transistors for high-frequency amplification
Semiconductor devices-Discrete devices-Part 7:Bipolar transistors-Section Four:Blank detail specification for case-rated bipolar transistors for high-frequency amplification
Semiconductor devices-Discrete devices-Part 7:Bipolar transistors-Section Two:Blank detail specification for case-rated bipolar transistors for low-frequency amplification
本标准适用于由壳体制造商提供的空壳体(以下简称壳体),该壳体是用户在安装开关设备和控制设备元件之前的产品。 本标准规定了符合GB 7251系列标准的低压成套开关设备和控制设备所用壳体的定义、分类、性能和试验要求。该低压成套开关设备和控制设备的额定电压为交流不超过100OV,频率不
Empty enclosures for low-voltage switchgear and controlgear assemblies General requirements
本标准适用于由壳体制造商提供的、在用户安装开关设备和控制设备元件之前的空壳体(以下简称壳体)。本标准规定了低压成套开关设备和控制设备(例如符合IEC 61439系列)所用的壳体的定义、分类、性能和试验要求。其额定电压为交流不超过1 000 V或直流不超过1 500 V,适用于户内或户外应用。本标准
Empty enclosures for low-voltage switchgear and controlgear assemblies.General requirements
Empty enclosures for low-voltage switchgear and controlgear assemblies. General requirements
本文件规定了真空助力器用铁制壳体的术语和定义、产品组成、技术要求、试验方法、检验规则、标志、包装、运输和贮存。 本文件适用于汽车真空助力器用框架结构类铁制壳体零部件
Iron housing for vacuum booster
1.1. Prezentul standard se refera la conductoarele din s?rme de o?el zineat, de sec?iune circular?, mul?ii ilare, denumite curent
Ovci'lH'iid power linos ZTNC-COATFD STRFJ. CONDUC- TOR S
规定了空调轴流风机用电机壳体的技术要求,描述了对应的证实方法
Air conditioning motor housing for axial flow fan-Technical specifications
Blank detail specification of packages for semiconductor integrated circuits
Blank detail specification: Case-rated thyristors
This draft is now available for public comment and your views and technical comments on it would be appreciated. If you have no specific comments
Aerospace Series Connector, Rectangular, with Metallic Shells and Screw-Locking Part 001 : Technical Specification Edition P 1
Conectors, electrical, circular, bayonnet coupling. Operating temperature 175 degrees celsius continuous duty. Short shell.
Circuit Breakers (Automatic - ALB-1) and Switch, Toggle (Circuit Breaker, Non-Automatic - NLB-1) Air, Insulated Housing, 125 Volts and Below A.C. and D.C., (Naval Shipboard Use)
Semiconductor devices. Discrete devices. Part 7: Bipolar transistors. Section four: Blank detail specification for case-rated bipolar transistors for high-frequency amplification
Semiconductor devices-Discrete devices-Part 7:Bipolar transistors-Section Four:Blank detail specification for case-rated bipolar transistors for high-frequency amplification
Semiconductor devices-Discrete devices-Part 7:Bipolar transistors-Section Four:Blank detail specification for case-rated bipolar transistors for high-frequency amplification
Semiconductor devices-Discrete devices-Part 7:Bipolar transistors-Section Two:Blank detail specification for case-rated bipolar transistors for low-frequency amplification