存储器检测

IRAM 9515-1962 符合存储器

DLA SMD-5962-95600 REV J-2008 单片硅512Kx8静态随机存取存储器(SRAM),数字存储器微电路

MICROCIRCUITS, MEMORY, DIGITAL, 512K x 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON

I.S.118-1963 厨房存储器（木制）

1. This specification deals with the space dimensions and general construction of kitchen storage units manufactured from wood. The specification

KITCHEN STORAGE UNITS(WOOD)

JUS D.E2.077-1977 存储器．刚度测定

Storage units. Determination ofriqkiity

DLA SMD-5962-95613 REV J-2008 单片硅512Kx8位静态随机存取存储器(SRAM),数字存储器微电路

MICROCIRCUIT, MEMORY, DIGITAL, SRAM, 512K x 8-BIT, MONOLITHIC SILICON

IEEE 1212.1-1993 处理器和外围设备中共享存储器的传送(直接存储器存取DMA)

Describes a DMA Framework that provides recommended architectures for high-performance interfaces between Functions and System Memory, connected

Communicating among processors and peripherals using shared memory (direct memory access DMA)

ARINC 644A ITEM 4.0-1996 大容量存储器选择

Mass Storage Option

Mass Storage Option

DLA MIL-M-38510/246 VALID NOTICE 4-2010 微电路、存储器、数字、NMOS、246,144 位、动态随机存取存储器（DRAM）、单片硅

MICROCIRCUITS, MEMORY, DIGITAL, NMOS, 246,144-BIT, DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON

DLA SMD-5962-79018 REV D-2012 微电路、存储器、数字、CMOS 128 X 8 位随机存取存储器（RAM）、单片硅

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128 X 8-BIT RANDOM ACCESS MEMORY (RAM), MONOLITHIC SILICON

DLA SMD-5962-94611 REV T-2012 微电路，混合，存储器，数字，512K x 32 位，静态随机存取存储器，CMOS

MICROCIRCUIT, HYBRID, MEMORY, DIGITAL, 512K x 32-BIT, STATIC RANDOM ACCESS MEMORY, CMOS

DLA SMD-5962-96795 REV D-2009 微电路、存储器、数字、256K X 16 静态随机存取存储器（SRAM）、单片硅

MICROCIRCUIT, MEMORY, DIGITAL, 256K X 16 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON

DLA SMD-5962-93155 REV C-2012 微电路、混合、存储器、256K X 8 位、电可擦可编程只读存储器

MICROCIRCUIT, HYBRID, MEMORY, 256K X 8-BIT, ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY

DLA SMD-5962-95538-1996 128K X 8-BIT可消除可编程反射存储器只读存储器混合微电路

This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H

MICROCIRCUIT, HYBRID, MEMORY, FLASH, ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 128K X 8-BIT

DLA MIL-M-38510/240 A VALID NOTICE 4-2010 微电路、存储器、数字、NMOS、16、384 位动态随机存取存储器（DRAM）、单晶硅

Microcircuits, Memory, Digital, NMOS, 16, 384 Bit Dynamic Random Access Memory (DRAM), Monolythic Silicon

DLA MIL-M-38510/293 A VALID NOTICE 4-2010 微电路、存储器、数字、CMOS、262、144 位静态随机存取存储器（SRAM）单片硅

Microcircuits, Memory, Digital, CMOS, 262, 144-Bit Static Random Access Memory (SRAM) Monolithic Silicon

IRAM 9515-1962 符合存储器

DLA SMD-5962-95600 REV J-2008 单片硅512Kx8静态随机存取存储器(SRAM),数字存储器微电路

MICROCIRCUITS, MEMORY, DIGITAL, 512K x 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON

I.S.118-1963 厨房存储器（木制）

1. This specification deals with the space dimensions and general construction of kitchen storage units manufactured from wood. The specification

KITCHEN STORAGE UNITS(WOOD)

JUS D.E2.077-1977 存储器．刚度测定

Storage units. Determination ofriqkiity

DLA SMD-5962-95613 REV J-2008 单片硅512Kx8位静态随机存取存储器(SRAM),数字存储器微电路

MICROCIRCUIT, MEMORY, DIGITAL, SRAM, 512K x 8-BIT, MONOLITHIC SILICON

IEEE 1212.1-1993 处理器和外围设备中共享存储器的传送(直接存储器存取DMA)

Describes a DMA Framework that provides recommended architectures for high-performance interfaces between Functions and System Memory, connected

Communicating among processors and peripherals using shared memory (direct memory access DMA)

ARINC 644A ITEM 4.0-1996 大容量存储器选择

Mass Storage Option

Mass Storage Option

DLA MIL-M-38510/246 VALID NOTICE 4-2010 微电路、存储器、数字、NMOS、246,144 位、动态随机存取存储器（DRAM）、单片硅

MICROCIRCUITS, MEMORY, DIGITAL, NMOS, 246,144-BIT, DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON

DLA SMD-5962-79018 REV D-2012 微电路、存储器、数字、CMOS 128 X 8 位随机存取存储器（RAM）、单片硅

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128 X 8-BIT RANDOM ACCESS MEMORY (RAM), MONOLITHIC SILICON

DLA SMD-5962-94611 REV T-2012 微电路，混合，存储器，数字，512K x 32 位，静态随机存取存储器，CMOS

MICROCIRCUIT, HYBRID, MEMORY, DIGITAL, 512K x 32-BIT, STATIC RANDOM ACCESS MEMORY, CMOS

DLA SMD-5962-96795 REV D-2009 微电路、存储器、数字、256K X 16 静态随机存取存储器（SRAM）、单片硅

MICROCIRCUIT, MEMORY, DIGITAL, 256K X 16 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON

DLA SMD-5962-93155 REV C-2012 微电路、混合、存储器、256K X 8 位、电可擦可编程只读存储器

MICROCIRCUIT, HYBRID, MEMORY, 256K X 8-BIT, ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY

DLA SMD-5962-95538-1996 128K X 8-BIT可消除可编程反射存储器只读存储器混合微电路

This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H

MICROCIRCUIT, HYBRID, MEMORY, FLASH, ERASABLE/ PROGRAMMABLE READ ONLY MEMORY, 128K X 8-BIT

DLA MIL-M-38510/240 A VALID NOTICE 4-2010 微电路、存储器、数字、NMOS、16、384 位动态随机存取存储器（DRAM）、单晶硅

Microcircuits, Memory, Digital, NMOS, 16, 384 Bit Dynamic Random Access Memory (DRAM), Monolythic Silicon

DLA MIL-M-38510/293 A VALID NOTICE 4-2010 微电路、存储器、数字、CMOS、262、144 位静态随机存取存储器（SRAM）单片硅

Microcircuits, Memory, Digital, CMOS, 262, 144-Bit Static Random Access Memory (SRAM) Monolithic Silicon