电压基准二极管和电压调整二极管检测

📅 发布时间:2024-05-27 👤 来源:北检院 👁 阅读:

GB/T 6589-2002 半导体器件 分立器件 第3-2部分;信号(包括开关)(不包括温度补偿精密)空白详细规范

本空白详细规范是半导体器件的一系列空白详细规范之一,并应与下列国家标准和IEC标准一起使用。 GB/T12560--1999半导体器件分立器件分规范(idt IEC 60747—11:1985) IEC 60747—10(QC 700000):1991 半导体器件第l0部分分立器件和

Semiconductor devices discrete devices Part 3-2: Signal (including switching) and regulator diodes blank detail specification for voltage-regulator diodes and voltage-reference diodes (excluding temperature-compensated precision reference diodes)

IEC 60747-3-2:1986 半导体器件 分立器件 第3部分:信号(包括开关)及 第2节:(不包括温度补偿精密)空白详细规范

Applicable to quality assessment for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference

Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section Two: Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference d

NF C86-815:1981 子元器件质量评估协体系.空白详细规范:

Harmonised system of quality assessment for electronic components. Blank detail specification : voltage regulator diodes and voltage reference diodes.

BS E9375:1975 子元器件质量评定协体系规范.空白详细规范:除精密温度补偿之外的

Ratings, characteristics and inspection requirements to be included in detail specifications for use in the CECC system of harmonized specifications

Specification - Harmonized system of quality assessment for electronic components - Blank detail specification: voltage regulator diodes and voltage reference diodes excluding precision-voltage temperature-compensated reference diodes

GJB 33/006-1989 半导体分立器件 空白详细规范

Blank detailed specification for voltage regulation and voltage reference diodes for semiconductor discrete devices

KS C IEC 60747-3-2:2006 半导体器件.分立器件.第3部分:信号(包括开关).第2节:稳(不包括温度补偿精密)的空白详细规范

이 규격은 정전압 다이오드 및 전압 기준 다이오드의 개별 규격 지침에 대하여 규정한다

Semiconductor devices-Discrete devices-Part 3:Signal (including switching) and regulator diodes-Section Two:Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference diodes

GB/T 13063-1991 空白详细规范

本空白详细规范规定了制订“电流调整和电流基准二极管”详细规范的基本原则,制订该范围内的所有详细规范应与本空白详细规范一致

Blank detail specification for current-regulator and current-reference diodes

DS/IEC 747-3-2:1987 半导体器件.分立器件.第3部分:信号(包括开关).第2节:稳(不包括温度补偿精密)的空白详细规范

Semiconductor devices. Discrete devices. Part 3: Signal (including switching) and regulator diodes. Section 2: Blank detail specification for voltage regulator diodes and voltage reference diodes, excluding temperature compensated precision refere di

KS C IEC 60747-3-2-2006(2021 半导体器件分立器件第3部分:信号(包括开关)第2节:空白详细规范不包括温度补偿精密

Semiconductor devices-Discrete devices-Part 3:Signal (including switching) and regulator diodes-Section Two:Blank detail specification for voltage-regulator diodes and voltage-reference diodes, exclud

KS C IEC 60747-3-2-2006(2016 半导体器件分立器件第3部分:信号(包括开关)第2节:空白详细规范 不包括温度补偿精密

Semiconductor devices-Discrete devices-Part 3:Signal (including switching) and regulator diodes-Section Two:Blank detail specification for voltage-regulator diodes and voltage-reference diodes, exclud

STAS 12123/3-1983 半导体设备参考气特性的测量方法

1 Prezentul standard stabile?te metodele de m?surare a caracteristicilor electrice ale diodelor cu tensiune de referin?? ?i stabilizatoare de tensiune

Semiconductor devices VOLTAGE REFERENCE DIODES AND VOLTAGE REGULATOR DIODES Measuring methodes for electrical characteristics

KS C 5205-2002 可靠性有保证的稳参考

RELIABILITY ASSURED VOLTAGE REGULATOR DIODES AND VOLTAGE REFERENCE DIODES

GB 9595-1988 子元器件详细规范 2CW412~473型硅

Detailed specification for electronic components 2CW412~473 silicon voltage adjustment diodes

GOST 21011.2-1976 高.脉冲阳流的测量方法

High-voltage kenotrons. The anode current measurement method within the voltage pulse

BS IEC 60747-3:2013 半导体器件.分立器件:信号、开关

Semiconductor devices. Discrete devices: Signal, switching and regulator diodes

GB/T 6589-2002 半导体器件 分立器件 第3-2部分;信号(包括开关)(不包括温度补偿精密)空白详细规范

本空白详细规范是半导体器件的一系列空白详细规范之一,并应与下列国家标准和IEC标准一起使用。 GB/T12560--1999半导体器件分立器件分规范(idt IEC 60747—11:1985) IEC 60747—10(QC 700000):1991 半导体器件第l0部分分立器件和

Semiconductor devices discrete devices Part 3-2: Signal (including switching) and regulator diodes blank detail specification for voltage-regulator diodes and voltage-reference diodes (excluding temperature-compensated precision reference diodes)

IEC 60747-3-2:1986 半导体器件 分立器件 第3部分:信号(包括开关)及 第2节:(不包括温度补偿精密)空白详细规范

Applicable to quality assessment for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference

Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section Two: Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference d

NF C86-815:1981 子元器件质量评估协体系.空白详细规范:

Harmonised system of quality assessment for electronic components. Blank detail specification : voltage regulator diodes and voltage reference diodes.

BS E9375:1975 子元器件质量评定协体系规范.空白详细规范:除精密温度补偿之外的

Ratings, characteristics and inspection requirements to be included in detail specifications for use in the CECC system of harmonized specifications

Specification - Harmonized system of quality assessment for electronic components - Blank detail specification: voltage regulator diodes and voltage reference diodes excluding precision-voltage temperature-compensated reference diodes

GJB 33/006-1989 半导体分立器件 空白详细规范

Blank detailed specification for voltage regulation and voltage reference diodes for semiconductor discrete devices

KS C IEC 60747-3-2:2006 半导体器件.分立器件.第3部分:信号(包括开关).第2节:稳(不包括温度补偿精密)的空白详细规范

이 규격은 정전압 다이오드 및 전압 기준 다이오드의 개별 규격 지침에 대하여 규정한다

Semiconductor devices-Discrete devices-Part 3:Signal (including switching) and regulator diodes-Section Two:Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference diodes

GB/T 13063-1991 空白详细规范

本空白详细规范规定了制订“电流调整和电流基准二极管”详细规范的基本原则,制订该范围内的所有详细规范应与本空白详细规范一致

Blank detail specification for current-regulator and current-reference diodes

DS/IEC 747-3-2:1987 半导体器件.分立器件.第3部分:信号(包括开关).第2节:稳(不包括温度补偿精密)的空白详细规范

Semiconductor devices. Discrete devices. Part 3: Signal (including switching) and regulator diodes. Section 2: Blank detail specification for voltage regulator diodes and voltage reference diodes, excluding temperature compensated precision refere di

KS C IEC 60747-3-2-2006(2021 半导体器件分立器件第3部分:信号(包括开关)第2节:空白详细规范不包括温度补偿精密

Semiconductor devices-Discrete devices-Part 3:Signal (including switching) and regulator diodes-Section Two:Blank detail specification for voltage-regulator diodes and voltage-reference diodes, exclud

KS C IEC 60747-3-2-2006(2016 半导体器件分立器件第3部分:信号(包括开关)第2节:空白详细规范 不包括温度补偿精密

Semiconductor devices-Discrete devices-Part 3:Signal (including switching) and regulator diodes-Section Two:Blank detail specification for voltage-regulator diodes and voltage-reference diodes, exclud

STAS 12123/3-1983 半导体设备参考气特性的测量方法

1 Prezentul standard stabile?te metodele de m?surare a caracteristicilor electrice ale diodelor cu tensiune de referin?? ?i stabilizatoare de tensiune

Semiconductor devices VOLTAGE REFERENCE DIODES AND VOLTAGE REGULATOR DIODES Measuring methodes for electrical characteristics

KS C 5205-2002 可靠性有保证的稳参考

RELIABILITY ASSURED VOLTAGE REGULATOR DIODES AND VOLTAGE REFERENCE DIODES

GB 9595-1988 子元器件详细规范 2CW412~473型硅

Detailed specification for electronic components 2CW412~473 silicon voltage adjustment diodes

GOST 21011.2-1976 高.脉冲阳流的测量方法

High-voltage kenotrons. The anode current measurement method within the voltage pulse

BS IEC 60747-3:2013 半导体器件.分立器件:信号、开关

Semiconductor devices. Discrete devices: Signal, switching and regulator diodes

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