电压基准二极管和电压调整二极管检测

GB/T 6589-2002 半导体器件 分立器件 第3-2部分;信号(包括开关)和调整二极管电压调整二极管和电压基准二极管(不包括温度补偿精密基准二极管)空白详细规范

本空白详细规范是半导体器件的一系列空白详细规范之一，并应与下列国家标准和IEC标准一起使用。 GB／T12560--1999半导体器件分立器件分规范(idt IEC 60747—11：1985) IEC 60747—10(QC 700000)：1991 半导体器件第l0部分分立器件和

Semiconductor devices discrete devices Part 3-2: Signal (including switching) and regulator diodes blank detail specification for voltage-regulator diodes and voltage-reference diodes (excluding temperature-compensated precision reference diodes)

IEC 60747-3-2:1986 半导体器件 分立器件 第3部分:信号二极管(包括开关二极管)及调整二极管 第2节:电压调整二极管和电压基准二极管(不包括温度补偿精密基准二极管)空白详细规范

Applicable to quality assessment for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference

Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section Two: Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference d

NF C86-815:1981 电子元器件质量评估协调体系.空白详细规范:电压调整器二极管和电压基准二极管

Harmonised system of quality assessment for electronic components. Blank detail specification : voltage regulator diodes and voltage reference diodes.

BS E9375:1975 电子元器件质量评定协调体系规范.空白详细规范:除精密电压温度补偿基准二极管之外的调压二极管和电压基准二极管

Ratings, characteristics and inspection requirements to be included in detail specifications for use in the CECC system of harmonized specifications

Specification - Harmonized system of quality assessment for electronic components - Blank detail specification: voltage regulator diodes and voltage reference diodes excluding precision-voltage temperature-compensated reference diodes

GJB 33/006-1989 半导体分立器件 电压调整和电压基准二极管空白详细规范

Blank detailed specification for voltage regulation and voltage reference diodes for semiconductor discrete devices

KS C IEC 60747-3-2:2006 半导体器件.分立器件.第3部分:信号二极管(包括开关二极管)和调节二极管.第2节:稳压二极管和基准电压二极管(不包括温度补偿精密基准二极管)的空白详细规范

이 규격은 정전압 다이오드 및 전압 기준 다이오드의 개별 규격 지침에 대하여 규정한다

Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section Two：Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference diodes

GB/T 13063-1991 电流调整和电流基准二极管空白详细规范

本空白详细规范规定了制订“电流调整和电流基准二极管”详细规范的基本原则，制订该范围内的所有详细规范应与本空白详细规范一致

Blank detail specification for current-regulator and current-reference diodes

DS/IEC 747-3-2:1987 半导体器件.分立器件.第3部分:信号二极管(包括开关二极管和稳压二极管).第2节:稳压二极管和基准电压二极管(不包括温度补偿精密基准二极管)的空白详细规范

Semiconductor devices. Discrete devices. Part 3: Signal (including switching) and regulator diodes. Section 2: Blank detail specification for voltage regulator diodes and voltage reference diodes, excluding temperature compensated precision refere di

KS C IEC 60747-3-2-2006(2021 半导体器件分立器件第3部分:信号（包括开关）和稳压二极管第2节:调压二极管和基准电压二极管空白详细规范不包括温度补偿精密基准二极管

Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section Two：Blank detail specification for voltage-regulator diodes and voltage-reference diodes, exclud

KS C IEC 60747-3-2-2006(2016 半导体器件分立器件第3部分:信号（包括开关）和稳压二极管第2节:调压二极管和电压基准二极管空白详细规范 不包括温度补偿精密基准二极管

Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section Two：Blank detail specification for voltage-regulator diodes and voltage-reference diodes, exclud

STAS 12123/3-1983 半导体设备电压参考二极管和电压调节二极管电气特性的测量方法

1 Prezentul standard stabile?te metodele de m?surare a caracteristicilor electrice ale diodelor cu tensiune de referin?? ?i stabilizatoare de tensiune

Semiconductor devices VOLTAGE REFERENCE DIODES AND VOLTAGE REGULATOR DIODES Measuring methodes for electrical characteristics

KS C 5205-2002 可靠性有保证的稳压二极管和电压参考二极管

RELIABILITY ASSURED VOLTAGE REGULATOR DIODES AND VOLTAGE REFERENCE DIODES

GB 9595-1988 电子元器件详细规范 2CW412~473型硅电压调整二极管

Detailed specification for electronic components 2CW412~473 silicon voltage adjustment diodes

GOST 21011.2-1976 高压整流二极管.脉冲阳极电流的测量方法

High-voltage kenotrons. The anode current measurement method within the voltage pulse

BS IEC 60747-3:2013 半导体器件.分立器件:信号二极管、开关二极管及调整二极管

Semiconductor devices. Discrete devices: Signal, switching and regulator diodes

GB/T 6589-2002 半导体器件 分立器件 第3-2部分;信号(包括开关)和调整二极管电压调整二极管和电压基准二极管(不包括温度补偿精密基准二极管)空白详细规范

本空白详细规范是半导体器件的一系列空白详细规范之一，并应与下列国家标准和IEC标准一起使用。 GB／T12560--1999半导体器件分立器件分规范(idt IEC 60747—11：1985) IEC 60747—10(QC 700000)：1991 半导体器件第l0部分分立器件和

Semiconductor devices discrete devices Part 3-2: Signal (including switching) and regulator diodes blank detail specification for voltage-regulator diodes and voltage-reference diodes (excluding temperature-compensated precision reference diodes)

IEC 60747-3-2:1986 半导体器件 分立器件 第3部分:信号二极管(包括开关二极管)及调整二极管 第2节:电压调整二极管和电压基准二极管(不包括温度补偿精密基准二极管)空白详细规范

Applicable to quality assessment for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference

Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section Two: Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference d

NF C86-815:1981 电子元器件质量评估协调体系.空白详细规范:电压调整器二极管和电压基准二极管

Harmonised system of quality assessment for electronic components. Blank detail specification : voltage regulator diodes and voltage reference diodes.

BS E9375:1975 电子元器件质量评定协调体系规范.空白详细规范:除精密电压温度补偿基准二极管之外的调压二极管和电压基准二极管

Ratings, characteristics and inspection requirements to be included in detail specifications for use in the CECC system of harmonized specifications

Specification - Harmonized system of quality assessment for electronic components - Blank detail specification: voltage regulator diodes and voltage reference diodes excluding precision-voltage temperature-compensated reference diodes

GJB 33/006-1989 半导体分立器件 电压调整和电压基准二极管空白详细规范

Blank detailed specification for voltage regulation and voltage reference diodes for semiconductor discrete devices

KS C IEC 60747-3-2:2006 半导体器件.分立器件.第3部分:信号二极管(包括开关二极管)和调节二极管.第2节:稳压二极管和基准电压二极管(不包括温度补偿精密基准二极管)的空白详细规范

이 규격은 정전압 다이오드 및 전압 기준 다이오드의 개별 규격 지침에 대하여 규정한다

Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section Two：Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference diodes

GB/T 13063-1991 电流调整和电流基准二极管空白详细规范

本空白详细规范规定了制订“电流调整和电流基准二极管”详细规范的基本原则，制订该范围内的所有详细规范应与本空白详细规范一致

Blank detail specification for current-regulator and current-reference diodes

DS/IEC 747-3-2:1987 半导体器件.分立器件.第3部分:信号二极管(包括开关二极管和稳压二极管).第2节:稳压二极管和基准电压二极管(不包括温度补偿精密基准二极管)的空白详细规范

Semiconductor devices. Discrete devices. Part 3: Signal (including switching) and regulator diodes. Section 2: Blank detail specification for voltage regulator diodes and voltage reference diodes, excluding temperature compensated precision refere di

KS C IEC 60747-3-2-2006(2021 半导体器件分立器件第3部分:信号（包括开关）和稳压二极管第2节:调压二极管和基准电压二极管空白详细规范不包括温度补偿精密基准二极管

Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section Two：Blank detail specification for voltage-regulator diodes and voltage-reference diodes, exclud

KS C IEC 60747-3-2-2006(2016 半导体器件分立器件第3部分:信号（包括开关）和稳压二极管第2节:调压二极管和电压基准二极管空白详细规范 不包括温度补偿精密基准二极管

Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section Two：Blank detail specification for voltage-regulator diodes and voltage-reference diodes, exclud

STAS 12123/3-1983 半导体设备电压参考二极管和电压调节二极管电气特性的测量方法

1 Prezentul standard stabile?te metodele de m?surare a caracteristicilor electrice ale diodelor cu tensiune de referin?? ?i stabilizatoare de tensiune

Semiconductor devices VOLTAGE REFERENCE DIODES AND VOLTAGE REGULATOR DIODES Measuring methodes for electrical characteristics

KS C 5205-2002 可靠性有保证的稳压二极管和电压参考二极管

RELIABILITY ASSURED VOLTAGE REGULATOR DIODES AND VOLTAGE REFERENCE DIODES

GB 9595-1988 电子元器件详细规范 2CW412~473型硅电压调整二极管

Detailed specification for electronic components 2CW412~473 silicon voltage adjustment diodes

GOST 21011.2-1976 高压整流二极管.脉冲阳极电流的测量方法

High-voltage kenotrons. The anode current measurement method within the voltage pulse

BS IEC 60747-3:2013 半导体器件.分立器件:信号二极管、开关二极管及调整二极管

Semiconductor devices. Discrete devices: Signal, switching and regulator diodes