信号二极管检测

KS C 7003-1996 小信号二极管测定方法

이 규격은 전자 장치에 사용하는 검파, 스위칭, 혼합 등에 사용하는 소신호용 반도체 다이오

Measuring methods for small signal diodes

KS C 7003-1981 小信号二极管测定方法

Measuring methods for small signal diodes

KS C 7003-2017 小信号二极管的测量方法

Measuring methods for small signal diodes

KS C 7003-2017(2022 小信号二极管的测量方法

Measuring methods for small signal diodes

JUS N.R1.422-1980 小功率信号二极管．测量方法

Low-power signal di ode?. Measuring methods

JIS C 7031:1993 小型信号二极管的测量方法

この規格は，電子装置に使用する検波，スイッチング，混合などに用いる小信号用半導体ダィオード(以下,ダィオードという。)の電気的測定方法について規定する

Measuring methods for small signal diodes

KS C 5203-1980(2000 保证可靠性的小信号二极管

RELIABILITY ASSURED SMALL SIGNAL DIODES

KS C 5203-1980 保证可靠性的小信号二极管

RELIABILITY ASSURED SMALL SIGNAL DIODES

JIS C 7221:1978 有可靠性保证的小信号二极管

Reliability assured small signal diodes

KS C 5203-2002 可靠性有保证的小信号二极管

RELIABILITY ASSURED SMALL SIGNAL DIODES

CECC 50 001- 026 ISSUE 3-1994 NL-CECC 50 001-26.信号二极管型号:BA314(英)

NL-CECC 50 001-26; Signal Diodes Type Number: BA314 (En)

IEC 60747-3-1:1986 半导体器件 分立器件 第3部分:信号二极管(包括开关二极管)及调整二极管 第1节:信号二极管、开关二极管和可控雪崩二极管空白详细规范

Applicable to quality assessment for signal diodes, switching diodes and controlled avalanche diodes. Gives specific requirements (included in QC

Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section One: Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes

KS C IEC 60747-3-1:2006 半导体器件.分立器件.第3部分:信号二极管(包括开关二极管)和调节二极管.第1节:信号二极管、开关二极管和受控雪崩二极管空白详细规范

이 규격은 신호 다이오드, 스위칭 다이오드 및 제어 애벌란시 다이오드의 개별 규격 지침에

Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section one：Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes

JEDEC EIA-318-B-1996 半导体信号二极管的反向恢复时间测量

This standard describes the measurement of signal diode (IF 5500 mA dc) reverse recovery times of less than 300 ns duration. It may, however, also

Measurement of Reverse Recovery Time for Semiconductor Signal Diodes [Replaced: JEDEC 318-1]

BS IEC 60747-3:2013 半导体器件.分立器件:信号二极管、开关二极管及调整二极管

Semiconductor devices. Discrete devices: Signal, switching and regulator diodes

KS C 7003-1996 小信号二极管测定方法

이 규격은 전자 장치에 사용하는 검파, 스위칭, 혼합 등에 사용하는 소신호용 반도체 다이오

Measuring methods for small signal diodes

KS C 7003-1981 小信号二极管测定方法

Measuring methods for small signal diodes

KS C 7003-2017 小信号二极管的测量方法

Measuring methods for small signal diodes

KS C 7003-2017(2022 小信号二极管的测量方法

Measuring methods for small signal diodes

JUS N.R1.422-1980 小功率信号二极管．测量方法

Low-power signal di ode?. Measuring methods

JIS C 7031:1993 小型信号二极管的测量方法

この規格は，電子装置に使用する検波，スイッチング，混合などに用いる小信号用半導体ダィオード(以下,ダィオードという。)の電気的測定方法について規定する

Measuring methods for small signal diodes

KS C 5203-1980(2000 保证可靠性的小信号二极管

RELIABILITY ASSURED SMALL SIGNAL DIODES

KS C 5203-1980 保证可靠性的小信号二极管

RELIABILITY ASSURED SMALL SIGNAL DIODES

JIS C 7221:1978 有可靠性保证的小信号二极管

Reliability assured small signal diodes

KS C 5203-2002 可靠性有保证的小信号二极管

RELIABILITY ASSURED SMALL SIGNAL DIODES

CECC 50 001- 026 ISSUE 3-1994 NL-CECC 50 001-26.信号二极管型号:BA314(英)

NL-CECC 50 001-26; Signal Diodes Type Number: BA314 (En)

IEC 60747-3-1:1986 半导体器件 分立器件 第3部分:信号二极管(包括开关二极管)及调整二极管 第1节:信号二极管、开关二极管和可控雪崩二极管空白详细规范

Applicable to quality assessment for signal diodes, switching diodes and controlled avalanche diodes. Gives specific requirements (included in QC

Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section One: Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes

KS C IEC 60747-3-1:2006 半导体器件.分立器件.第3部分:信号二极管(包括开关二极管)和调节二极管.第1节:信号二极管、开关二极管和受控雪崩二极管空白详细规范

이 규격은 신호 다이오드, 스위칭 다이오드 및 제어 애벌란시 다이오드의 개별 규격 지침에

Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section one：Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes

JEDEC EIA-318-B-1996 半导体信号二极管的反向恢复时间测量

This standard describes the measurement of signal diode (IF 5500 mA dc) reverse recovery times of less than 300 ns duration. It may, however, also

Measurement of Reverse Recovery Time for Semiconductor Signal Diodes [Replaced: JEDEC 318-1]

BS IEC 60747-3:2013 半导体器件.分立器件:信号二极管、开关二极管及调整二极管

Semiconductor devices. Discrete devices: Signal, switching and regulator diodes