DLA SMD-5962-89622 REV A-1994 硅单片,结型场效应晶体管高速运算放大器,数字微型电路
The enclosed NOR is approved for use effective as of the date of the NOR. In accordance with MIL-STD-100 SMD holders should, as a minimum, handwrite
MICROCIRCUIT, LINEAR, HIGH-SPEED, JFET, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
SJ 50033/121-1997 半导体分立器件.CS3458～CS3460型硅N沟道结型场效应晶体管详细规范
Semiconductor discrete devices.Detail specification for type CS3458～CS3460 silicon N-channel junction mode field-effect transistors
SJ 50033/122-1997 半导体分立器件.CS3684～CS3687型硅N沟道结型场效应晶体管详细规范
Semiconductor discrete devices.Detail specification for type CS3684～CS3687 silicon N-channel junction mode field-effect transistors
DLA SMD-5962-90807 REV D-2002 硅单块 操作增强器,微功率结型场效应晶体管直线型微型电路
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class
MICROCIRCUIT, LINEAR, JFET, MICROPOWER, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-90817 REV C-2007 硅单块 高速结型场效应晶体管,双操作增强器,直线型微型电路
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V
MICROCIRCUIT, LINEAR, OPERATIONAL AMPLIFIER, DUAL, JFET, HIGH SPEED, MONOLITHIC SILICON
DLA SMD-5962-89976 REV B-2006 硅单片,结型场效应晶体管高速准确运算放大器,线性微型电路
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix
MICROCIRCUIT, LINEAR, HIGH SPEED, PRECISION, JFET, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-90633 REV A-2006 硅单片,四重双极结型场效应晶体管,运算放大器,线性微型电路
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class
MICROCIRCUIT, LINEAR, QUAD BIFET, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-87706 REV A-2000 硅单块 操作扩大器,精密结型场效应晶体管输入,直线型微型电路
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix
MICROCIRCUIT, LINEAR, PRECISION JFET-INPUT, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-90808 REV C-2002 硅单块 操作增强器,双微功率结型场效应晶体管直线型微型电路
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class
MICROCIRCUIT, LINEAR, JFET, MICROPOWER, DUAL, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-89669 REV A-2001 硅单片,四重单刀单掷结型场效应晶体管模拟开关,线性微型电路
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix
MICROCIRCUIT, LINEAR, QUAD, SPST JFET, ANALOG SWITCH, MONOLITHIC SILICON
DLA SMD-5962-87716 REV A-2000 硅单块 结型场效应晶体管模拟多路复用器,8沟道直线型微型电路
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix
MICROCIRCUIT, LINEAR, 8-CHANNEL, JFET ANALOG MULTIPLEXER, MONOLITHIC SILICON
DLA SMD-5962-87717 REV B-2002 硅单块 结型场效应晶体管模拟多路复用器,16沟道直线型微型电路
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix
MICROCIRCUIT, LINEAR, 16-CHANNEL JFET ANALOG MULTIPLEXER, MONOLITHIC SILICON
DLA SMD-5962-90809 REV E-2006 硅单块 操作增强器,四列微功率结型场效应晶体管直线型微型电路
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V
MICROCIRCUIT, LINEAR, JFET, MICROPOWER, QUAD, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
SJ/T 11059-1996 电子元器件详细规范 CS4220A型单栅N沟结型场效应晶体管（可供认证用）
Detailed specifications for electronic components - CS4220A single-gate N-channel junction type field-effect transistors (Applicable for certification)
DLA SMD-5962-91519 REV C-2007 硅单块 高速操作放大器,双精密结型场效应晶体管,直线式微型电路
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class
MICROCIRCUIT, LINEAR, DUAL PRECISION JFET, HIGH SPEED OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-89622 REV A-1994 硅单片,结型场效应晶体管高速运算放大器,数字微型电路
The enclosed NOR is approved for use effective as of the date of the NOR. In accordance with MIL-STD-100 SMD holders should, as a minimum, handwrite
MICROCIRCUIT, LINEAR, HIGH-SPEED, JFET, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
SJ 50033/121-1997 半导体分立器件.CS3458～CS3460型硅N沟道结型场效应晶体管详细规范
Semiconductor discrete devices.Detail specification for type CS3458～CS3460 silicon N-channel junction mode field-effect transistors
SJ 50033/122-1997 半导体分立器件.CS3684～CS3687型硅N沟道结型场效应晶体管详细规范
Semiconductor discrete devices.Detail specification for type CS3684～CS3687 silicon N-channel junction mode field-effect transistors
DLA SMD-5962-90807 REV D-2002 硅单块 操作增强器,微功率结型场效应晶体管直线型微型电路
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class
MICROCIRCUIT, LINEAR, JFET, MICROPOWER, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-90817 REV C-2007 硅单块 高速结型场效应晶体管,双操作增强器,直线型微型电路
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V
MICROCIRCUIT, LINEAR, OPERATIONAL AMPLIFIER, DUAL, JFET, HIGH SPEED, MONOLITHIC SILICON
DLA SMD-5962-89976 REV B-2006 硅单片,结型场效应晶体管高速准确运算放大器,线性微型电路
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix
MICROCIRCUIT, LINEAR, HIGH SPEED, PRECISION, JFET, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-90633 REV A-2006 硅单片,四重双极结型场效应晶体管,运算放大器,线性微型电路
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class
MICROCIRCUIT, LINEAR, QUAD BIFET, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-87706 REV A-2000 硅单块 操作扩大器,精密结型场效应晶体管输入,直线型微型电路
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix
MICROCIRCUIT, LINEAR, PRECISION JFET-INPUT, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-90808 REV C-2002 硅单块 操作增强器,双微功率结型场效应晶体管直线型微型电路
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class
MICROCIRCUIT, LINEAR, JFET, MICROPOWER, DUAL, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-89669 REV A-2001 硅单片,四重单刀单掷结型场效应晶体管模拟开关,线性微型电路
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix
MICROCIRCUIT, LINEAR, QUAD, SPST JFET, ANALOG SWITCH, MONOLITHIC SILICON
DLA SMD-5962-87716 REV A-2000 硅单块 结型场效应晶体管模拟多路复用器,8沟道直线型微型电路
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix
MICROCIRCUIT, LINEAR, 8-CHANNEL, JFET ANALOG MULTIPLEXER, MONOLITHIC SILICON
DLA SMD-5962-87717 REV B-2002 硅单块 结型场效应晶体管模拟多路复用器,16沟道直线型微型电路
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix
MICROCIRCUIT, LINEAR, 16-CHANNEL JFET ANALOG MULTIPLEXER, MONOLITHIC SILICON
DLA SMD-5962-90809 REV E-2006 硅单块 操作增强器,四列微功率结型场效应晶体管直线型微型电路
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V
MICROCIRCUIT, LINEAR, JFET, MICROPOWER, QUAD, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
SJ/T 11059-1996 电子元器件详细规范 CS4220A型单栅N沟结型场效应晶体管（可供认证用）
Detailed specifications for electronic components - CS4220A single-gate N-channel junction type field-effect transistors (Applicable for certification)
DLA SMD-5962-91519 REV C-2007 硅单块 高速操作放大器,双精密结型场效应晶体管,直线式微型电路
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class
MICROCIRCUIT, LINEAR, DUAL PRECISION JFET, HIGH SPEED OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
编辑：北检院编辑部
