半导体二极管检测

IEEE 256-1963 半导体二极管

"This Standard recommends and describes methods of measurement of the important electrical characteristics of semiconductor diodes. For the purpose

SEMICONDUCTOR DIODES

JUS A.A4.302-1990 半导体二极管特性表

Tabular layouts ofarticle characteristics for semiconductor diodes

GOST 17465-1980 半导体二极管.基本参数

Semiconductor diodes. Basic parameters

NAS717-1963 半导体二极管（修订版 1）

Semiconductor Diodes (Rev 1)

DLA MIL-PRF-19500/187 B (1)-2012 半导体二极管，DILICON，高压型 JAN1N2361

SEMICONDUCTOR DIODE, DILICON, HIGH-VOLTAGE TYPE JAN1N2361

IEEE No 256-1963 IEEE 半导体二极管测试程序

This Standard recommends and describes methods of measurement of the important electrical characteristics of semiconductor diodes, For the purpose

IEEE Test Procedure for Semiconductor Diodes

GOST 18986.10-1974 半导体二极管.电感测量方法

Настоящий стандарт распространяется на все типы полупроводниковых диодов в корпусе, у которых индуктивность более 0,1

Semiconductor diodes. Methods for measuring inductance

CSN 35 8732-1964 半导体二极管．正向电流测量

Semiconductor diodes. Measurement of forward current

CSN 35 8736-1964 半导体二极管．极间电容的测量

Semiconductor diodes. Measurement of interelectrode capacitanoe

SJ 20788-2000 半导体二极管热阻抗测试方法

Measurment method for thermal impedance of semiconductor diodes

GOST 18986.4-1973 半导体二极管.电容的测定方法

Semiconductor diodes. Methods for measuring capacitance

GOST 18986.6-1973 半导体二极管.恢复充电测定方法

Semiconductor diodes. Method for measuring recovery charge

SIS SS CECC 50001-1981 空白详细规范．通用半导体二极管

Blank detail specification: General purpose semiconductor diodes Vordruck fur Bauartspezi fika tion: Allzweck—Halbleiterdioden

GOST 18986.24-1983 半导体二极管.击穿电压测量方法

Semiconductor diodes. Measurement method of breakdown voltage

GOST 18986.0-1974 半导体二极管.电参数测定方法.总则

Semiconductor diodes. Measuring methods for electrical parameters. General requirements

IEEE 256-1963 半导体二极管

"This Standard recommends and describes methods of measurement of the important electrical characteristics of semiconductor diodes. For the purpose

SEMICONDUCTOR DIODES

JUS A.A4.302-1990 半导体二极管特性表

Tabular layouts ofarticle characteristics for semiconductor diodes

GOST 17465-1980 半导体二极管.基本参数

Semiconductor diodes. Basic parameters

NAS717-1963 半导体二极管（修订版 1）

Semiconductor Diodes (Rev 1)

DLA MIL-PRF-19500/187 B (1)-2012 半导体二极管，DILICON，高压型 JAN1N2361

SEMICONDUCTOR DIODE, DILICON, HIGH-VOLTAGE TYPE JAN1N2361

IEEE No 256-1963 IEEE 半导体二极管测试程序

This Standard recommends and describes methods of measurement of the important electrical characteristics of semiconductor diodes, For the purpose

IEEE Test Procedure for Semiconductor Diodes

GOST 18986.10-1974 半导体二极管.电感测量方法

Настоящий стандарт распространяется на все типы полупроводниковых диодов в корпусе, у которых индуктивность более 0,1

Semiconductor diodes. Methods for measuring inductance

CSN 35 8732-1964 半导体二极管．正向电流测量

Semiconductor diodes. Measurement of forward current

CSN 35 8736-1964 半导体二极管．极间电容的测量

Semiconductor diodes. Measurement of interelectrode capacitanoe

SJ 20788-2000 半导体二极管热阻抗测试方法

Measurment method for thermal impedance of semiconductor diodes

GOST 18986.4-1973 半导体二极管.电容的测定方法

Semiconductor diodes. Methods for measuring capacitance

GOST 18986.6-1973 半导体二极管.恢复充电测定方法

Semiconductor diodes. Method for measuring recovery charge

SIS SS CECC 50001-1981 空白详细规范．通用半导体二极管

Blank detail specification: General purpose semiconductor diodes Vordruck fur Bauartspezi fika tion: Allzweck—Halbleiterdioden

GOST 18986.24-1983 半导体二极管.击穿电压测量方法

Semiconductor diodes. Measurement method of breakdown voltage

GOST 18986.0-1974 半导体二极管.电参数测定方法.总则

Semiconductor diodes. Measuring methods for electrical parameters. General requirements