IEEE 256-1963 半导体二极管
"This Standard recommends and describes methods of measurement of the important electrical characteristics of semiconductor diodes. For the purpose
SEMICONDUCTOR DIODES
JUS A.A4.302-1990 半导体二极管特性表
Tabular layouts ofarticle characteristics for semiconductor diodes
GOST 17465-1980 半导体二极管.基本参数
Semiconductor diodes. Basic parameters
NAS717-1963 半导体二极管（修订版 1）
Semiconductor Diodes (Rev 1)
DLA MIL-PRF-19500/187 B (1)-2012 半导体二极管，DILICON，高压型 JAN1N2361
SEMICONDUCTOR DIODE, DILICON, HIGH-VOLTAGE TYPE JAN1N2361
IEEE No 256-1963 IEEE 半导体二极管测试程序
This Standard recommends and describes methods of measurement of the important electrical characteristics of semiconductor diodes, For the purpose
IEEE Test Procedure for Semiconductor Diodes
GOST 18986.10-1974 半导体二极管.电感测量方法
Настоящий стандарт распространяется на все типы полупроводниковых диодов в корпусе, у которых индуктивность более 0,1
Semiconductor diodes. Methods for measuring inductance
CSN 35 8732-1964 半导体二极管．正向电流测量
Semiconductor diodes. Measurement of forward current
CSN 35 8736-1964 半导体二极管．极间电容的测量
Semiconductor diodes. Measurement of interelectrode capacitanoe
SJ 20788-2000 半导体二极管热阻抗测试方法
Measurment method for thermal impedance of semiconductor diodes
GOST 18986.4-1973 半导体二极管.电容的测定方法
Semiconductor diodes. Methods for measuring capacitance
GOST 18986.6-1973 半导体二极管.恢复充电测定方法
Semiconductor diodes. Method for measuring recovery charge
SIS SS CECC 50001-1981 空白详细规范．通用半导体二极管
Blank detail specification: General purpose semiconductor diodes Vordruck fur Bauartspezi fika tion: Allzweck—Halbleiterdioden
GOST 18986.24-1983 半导体二极管.击穿电压测量方法
Semiconductor diodes. Measurement method of breakdown voltage
GOST 18986.0-1974 半导体二极管.电参数测定方法.总则
Semiconductor diodes. Measuring methods for electrical parameters. General requirements
IEEE 256-1963 半导体二极管
"This Standard recommends and describes methods of measurement of the important electrical characteristics of semiconductor diodes. For the purpose
SEMICONDUCTOR DIODES
JUS A.A4.302-1990 半导体二极管特性表
Tabular layouts ofarticle characteristics for semiconductor diodes
GOST 17465-1980 半导体二极管.基本参数
Semiconductor diodes. Basic parameters
NAS717-1963 半导体二极管（修订版 1）
Semiconductor Diodes (Rev 1)
DLA MIL-PRF-19500/187 B (1)-2012 半导体二极管，DILICON，高压型 JAN1N2361
SEMICONDUCTOR DIODE, DILICON, HIGH-VOLTAGE TYPE JAN1N2361
IEEE No 256-1963 IEEE 半导体二极管测试程序
This Standard recommends and describes methods of measurement of the important electrical characteristics of semiconductor diodes, For the purpose
IEEE Test Procedure for Semiconductor Diodes
GOST 18986.10-1974 半导体二极管.电感测量方法
Настоящий стандарт распространяется на все типы полупроводниковых диодов в корпусе, у которых индуктивность более 0,1
Semiconductor diodes. Methods for measuring inductance
CSN 35 8732-1964 半导体二极管．正向电流测量
Semiconductor diodes. Measurement of forward current
CSN 35 8736-1964 半导体二极管．极间电容的测量
Semiconductor diodes. Measurement of interelectrode capacitanoe
SJ 20788-2000 半导体二极管热阻抗测试方法
Measurment method for thermal impedance of semiconductor diodes
GOST 18986.4-1973 半导体二极管.电容的测定方法
Semiconductor diodes. Methods for measuring capacitance
GOST 18986.6-1973 半导体二极管.恢复充电测定方法
Semiconductor diodes. Method for measuring recovery charge
SIS SS CECC 50001-1981 空白详细规范．通用半导体二极管
Blank detail specification: General purpose semiconductor diodes Vordruck fur Bauartspezi fika tion: Allzweck—Halbleiterdioden
GOST 18986.24-1983 半导体二极管.击穿电压测量方法
Semiconductor diodes. Measurement method of breakdown voltage
GOST 18986.0-1974 半导体二极管.电参数测定方法.总则
Semiconductor diodes. Measuring methods for electrical parameters. General requirements
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