服务热线:400-635-0567

功率MOSFET器件检测

发布时间:2024-05-27 17:49:26 - 更新时间:2024年06月29日 15:22

点击量:0

军工检测 其他检测

JEDEC JESD24-1985 MOSFET

This chapter consiste of a listing of terms and definitions and letter symbols that are used in other parte of this document and some are included

Power MOSFET's

JEDEC JEP115-1989 MOSFET电子测试方法

Power MOSFET Electrical Dose Rate Test Method

Power MOSFET Electrical Dose Rate Test Method

DLA SMD-5962-03247 REV C-2012 微电路、混合、线性、 MOSFET、双通道、光耦合

MICROCIRCUIT, HYBRID, LINEAR, POWER MOSFET, DUAL CHANNEL, OPTOCOUPLER

DLA SMD-5962-93140 REV J-2005 单通道光耦合,MOSFET,线性混合微型电路

This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534

MICROCIRCUIT, HYBRID, LINEAR, POWER MOSFET, SINGLE CHANNEL, OPTOCOUPLER

JEDEC JESD24-3-1990 JESD24的补遗-垂直MOSFET的热阻测量

JEDEC standards and publications contain material that has been prepared, reviewed, and approved through the JEDEC Board of Directors level

Thermal Impedance Measurements for Vertical Power MOSFETs (Delta Source-Drain Voltage Method) Addendum to JEDEC JESD 24

T/CASAS 015-2022 碳化硅金属氧化物半导体场效应晶体管 (SiC MOSFET循环试验方法

碳化硅金属氧化物半导体场效应晶体管(SiC MOSFET)具有阻断电压高、工作频率高、耐高温能力强、通态电阻低和开关损耗小等特点,广泛应用于高频、高压功率系统中。随着电力电子技术的不断发展,越来越多的领域如航天、航空、石油勘探、核能、通信等,迫切需要能够在髙温、高频等极端环境下工作的

Power cycling test method for silicon carbide metal-oxide-semiconductor field-effect-transistor(SiC MOSFET)

JEDEC JESD24-11-1996 JESD24的补遗-MOSFET 等值系列栅极电阻测试

Power MOSFET Equivalent Series Gate Resistance Test Method Addendum to JEDEC JESD 24

Power MOSFET Equivalent Series Gate Resistance Test Method Addendum to JEDEC JESD 24

CSN 35 1560-1969 半导体.整流

Zpracovatel: Elektrop?ístroj Mod?any — Ji?í ?palek Pracovník ??adu pro normalizaci a mě?ení: Ing. Josef Chvátal

Power semiconductor Rectifiers

GJB 1426A-2011 分配合成分配/合成通用规范

本规范规定了功率分配器、功率合成器以及功率分配/合成器的通用要求、质量保证规定和交货准备等。 本规范适用于功率分配器、功率合成器以及功率分配/合成器(简称产品

General specification for power dividers,power combiners and power dividers/combiners

GJB 1426-1992 分配合成分配/合成总规范

General specification for power dividers, power combiners and power dividers/combiners

DLA MIL-DTL-23971 D SUPP 1-2012 分配合成分配/合成通用规范

POWER DIVIDERS, POWER COMBINERS AND POWER DIVIDER/COMBINERS GENERAL SPECIFICATION FOR

DLA MIL-PRF-27/288 C-2010 变压和电感(音频、和大脉冲)电感

TRANSFORMERS AND INDUCTORS (AUDIO, POWER AND HIGH-POWER PULSE) INDUCTORS, POWER

DLA MIL-PRF-27/286 C-2010 变压和电感(音频、和大脉冲)电感

TRANSFORMERS AND INDUCTORS (AUDIO, POWER AND HIGH-POWER PULSE) INDUCTORS, POWER

DLA MIL-PRF-27/289 B-2011 变压和电感(音频、和大脉冲)电感

TRANSFORMERS AND INDUCTORS (AUDIO, POWER AND HIGH-POWER PULSE) INDUCTORS, POWER

CSN 34 5175-1979 半导体变换术语

Zpracovatel normy: ?KD Praha, o. p., závod Elektrotechnika- — Ing. Jaroslav Mendl Spolupracoval: V?zkumn? ústav silnoproudé elektrotechniky, B

Terminology of power semiconductor convenors

JEDEC JESD24-1985 MOSFET

This chapter consiste of a listing of terms and definitions and letter symbols that are used in other parte of this document and some are included

Power MOSFET's

JEDEC JEP115-1989 MOSFET电子测试方法

Power MOSFET Electrical Dose Rate Test Method

Power MOSFET Electrical Dose Rate Test Method

DLA SMD-5962-03247 REV C-2012 微电路、混合、线性、 MOSFET、双通道、光耦合

MICROCIRCUIT, HYBRID, LINEAR, POWER MOSFET, DUAL CHANNEL, OPTOCOUPLER

DLA SMD-5962-93140 REV J-2005 单通道光耦合,MOSFET,线性混合微型电路

This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534

MICROCIRCUIT, HYBRID, LINEAR, POWER MOSFET, SINGLE CHANNEL, OPTOCOUPLER

JEDEC JESD24-3-1990 JESD24的补遗-垂直MOSFET的热阻测量

JEDEC standards and publications contain material that has been prepared, reviewed, and approved through the JEDEC Board of Directors level

Thermal Impedance Measurements for Vertical Power MOSFETs (Delta Source-Drain Voltage Method) Addendum to JEDEC JESD 24

T/CASAS 015-2022 碳化硅金属氧化物半导体场效应晶体管 (SiC MOSFET循环试验方法

碳化硅金属氧化物半导体场效应晶体管(SiC MOSFET)具有阻断电压高、工作频率高、耐高温能力强、通态电阻低和开关损耗小等特点,广泛应用于高频、高压功率系统中。随着电力电子技术的不断发展,越来越多的领域如航天、航空、石油勘探、核能、通信等,迫切需要能够在髙温、高频等极端环境下工作的

Power cycling test method for silicon carbide metal-oxide-semiconductor field-effect-transistor(SiC MOSFET)

JEDEC JESD24-11-1996 JESD24的补遗-MOSFET 等值系列栅极电阻测试

Power MOSFET Equivalent Series Gate Resistance Test Method Addendum to JEDEC JESD 24

Power MOSFET Equivalent Series Gate Resistance Test Method Addendum to JEDEC JESD 24

CSN 35 1560-1969 半导体.整流

Zpracovatel: Elektrop?ístroj Mod?any — Ji?í ?palek Pracovník ??adu pro normalizaci a mě?ení: Ing. Josef Chvátal

Power semiconductor Rectifiers

GJB 1426A-2011 分配合成分配/合成通用规范

本规范规定了功率分配器、功率合成器以及功率分配/合成器的通用要求、质量保证规定和交货准备等。 本规范适用于功率分配器、功率合成器以及功率分配/合成器(简称产品

General specification for power dividers,power combiners and power dividers/combiners

GJB 1426-1992 分配合成分配/合成总规范

General specification for power dividers, power combiners and power dividers/combiners

DLA MIL-DTL-23971 D SUPP 1-2012 分配合成分配/合成通用规范

POWER DIVIDERS, POWER COMBINERS AND POWER DIVIDER/COMBINERS GENERAL SPECIFICATION FOR

DLA MIL-PRF-27/288 C-2010 变压和电感(音频、和大脉冲)电感

TRANSFORMERS AND INDUCTORS (AUDIO, POWER AND HIGH-POWER PULSE) INDUCTORS, POWER

DLA MIL-PRF-27/286 C-2010 变压和电感(音频、和大脉冲)电感

TRANSFORMERS AND INDUCTORS (AUDIO, POWER AND HIGH-POWER PULSE) INDUCTORS, POWER

DLA MIL-PRF-27/289 B-2011 变压和电感(音频、和大脉冲)电感

TRANSFORMERS AND INDUCTORS (AUDIO, POWER AND HIGH-POWER PULSE) INDUCTORS, POWER

CSN 34 5175-1979 半导体变换术语

Zpracovatel normy: ?KD Praha, o. p., závod Elektrotechnika- — Ing. Jaroslav Mendl Spolupracoval: V?zkumn? ústav silnoproudé elektrotechniky, B

Terminology of power semiconductor convenors

检测流程
填写并提交定制服务需求表
技术评估和方案讨论
对选定的试验方法进行报价
合同签定与付款
按期交付检测报告和相关数据
想了解更多检测项目
请点击咨询在线工程师
点击咨询
联系我们
服务热线:400-635-0567
地址:北京市丰台区航丰路8号院1号楼1层121
邮编:10000
总机:400-635-0567
联系我们

服务热线:400-635-0567

投诉建议:010-82491398

报告问题解答:010-8646-0567-8

周期、价格等

咨询

技术咨询