双极型随机存储器检测

SJ/T 10740-1996 半导体集成电路 双极型随机存储器测试方法的基本原理

Semiconductor integrated circuits - General principles of measuring methods for bipolar random access memories

DLA SMD-5962-87703 REV A-2006 硅单块 256X9比特随机存取存储器,双极数字主储存器微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix

MICROCIRCUIT, MEMORY, DIGITAL, BIPOLAR, 256 X 9-BIT RAM, MONOLITHIC SILICON

DLA SMD-5962-86023 REV C-2005 硅单块 双极256比特随机存取存储器,数字主储存器微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix

MICROCIRCUIT, MEMORY, DIGITAL, BIPOLAR 256-BIT RAM, MONOLITHIC SILICON

DLA SMD-5962-86051 REV C-2005 硅单块 双极64比特随机存取存储器,数字主储存器微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix

MICROCIRCUIT, MEMORY, DIGITAL, BIPOLAR 64-BIT RAM, MONOLITHIC SILICON

DLA SMD-5962-86052 REV C-2006 硅单块 双极256X8比特随机存取存储器,数字主储存器微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix

MICROCIRCUIT, MEMORY, DIGITAL, BIPOLAR 256 X 8-BIT RANDOM ACCESS MEMORY (RAM), MONOLITHIC SILICON

DLA SMD-5962-86020 REV C-2005 肖脱基双极随机存取存储器256X1比特低功率主储存器微型处理器

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix

MICROCIRCUIT, MEMORY, 256 X 1-BIT LOW POWER, SCHOTTKY BIPOLAR RAM MONOLITHIC SILICON

DLA SMD-5962-86025 REV E-2005 硅单块 随机存取存储器,2门16字4比特双极数字主储存器微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix

MICROCIRCUITS, MEMORY, DIGITAL, BIPOLAR, 16-WORD BY 4-BIT, 2-PORT, RAM, MONOLITHIC SILICON

DLA SMD-5962-78015 REV H-2005 硅单片64比特双极随机存取存储器,数字记忆微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix

MICROCIRCUIT, MEMORY DIGITIAL, 64-BIT BIPOLAR RAM, MONOLITHIC SILICON

DLA MIL-M-38510/230 A VALID NOTICE 4-2010 微电路、数字、双极 256 位随机存取存储器（RAM）单片硅

Microcircuit, Digital, Bipolar 256 Bit Random Access Memory (RAM) Monolithic Silicon

DLA SMD-5962-91662 REV B-2006 硅单块 4K X 16双门静态随机存取存储器,,数字主储存器微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K X 16 DUAL PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON

DLA SMD-5962-91518-1993 硅单块 1K X 4静态随机存取存储器,发射极耦合逻辑,数字主储存器微型电路

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military

MICROCIRCUIT, MEMORY, DIGITAL, ECL, 1K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON

DLA SMD-5962-87002 REV E-2006 硅单块 2KX8双门静态随机存取存储器,氧化物半导体,数字主体储存器微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 DUAL PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON

DLA SMD-5962-86015 REV B-2005 硅单块 64K X1静态随机存取存储器 数字主储存器微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 1, STATIC RAM, MONOLITHIC SILICON

DLA SMD-5962-91508 REV D-2013 微电路、存储器、数字、CMOS、16K X 8 双端口静态随机存取存储器（SRAM）、单片硅

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16K X 8 DUAL PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON

DLA SMD-5962-91593-1993 硅单块 16K X4静态随机存取存储器,双互补金属氧化物半导体,数字主储存器微型电路

This drawing forms a part of a one part - one part number documtation system (see 6.6 herein). Two product assurance classes consisting of military

MICROCIRCUIT, MEMORY, DIGITAL, BICMOS, 16K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON

SJ/T 10740-1996 半导体集成电路 双极型随机存储器测试方法的基本原理

Semiconductor integrated circuits - General principles of measuring methods for bipolar random access memories

DLA SMD-5962-87703 REV A-2006 硅单块 256X9比特随机存取存储器,双极数字主储存器微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix

MICROCIRCUIT, MEMORY, DIGITAL, BIPOLAR, 256 X 9-BIT RAM, MONOLITHIC SILICON

DLA SMD-5962-86023 REV C-2005 硅单块 双极256比特随机存取存储器,数字主储存器微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix

MICROCIRCUIT, MEMORY, DIGITAL, BIPOLAR 256-BIT RAM, MONOLITHIC SILICON

DLA SMD-5962-86051 REV C-2005 硅单块 双极64比特随机存取存储器,数字主储存器微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix

MICROCIRCUIT, MEMORY, DIGITAL, BIPOLAR 64-BIT RAM, MONOLITHIC SILICON

DLA SMD-5962-86052 REV C-2006 硅单块 双极256X8比特随机存取存储器,数字主储存器微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix

MICROCIRCUIT, MEMORY, DIGITAL, BIPOLAR 256 X 8-BIT RANDOM ACCESS MEMORY (RAM), MONOLITHIC SILICON

DLA SMD-5962-86020 REV C-2005 肖脱基双极随机存取存储器256X1比特低功率主储存器微型处理器

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix

MICROCIRCUIT, MEMORY, 256 X 1-BIT LOW POWER, SCHOTTKY BIPOLAR RAM MONOLITHIC SILICON

DLA SMD-5962-86025 REV E-2005 硅单块 随机存取存储器,2门16字4比特双极数字主储存器微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix

MICROCIRCUITS, MEMORY, DIGITAL, BIPOLAR, 16-WORD BY 4-BIT, 2-PORT, RAM, MONOLITHIC SILICON

DLA SMD-5962-78015 REV H-2005 硅单片64比特双极随机存取存储器,数字记忆微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix

MICROCIRCUIT, MEMORY DIGITIAL, 64-BIT BIPOLAR RAM, MONOLITHIC SILICON

DLA MIL-M-38510/230 A VALID NOTICE 4-2010 微电路、数字、双极 256 位随机存取存储器（RAM）单片硅

Microcircuit, Digital, Bipolar 256 Bit Random Access Memory (RAM) Monolithic Silicon

DLA SMD-5962-91662 REV B-2006 硅单块 4K X 16双门静态随机存取存储器,,数字主储存器微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K X 16 DUAL PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON

DLA SMD-5962-91518-1993 硅单块 1K X 4静态随机存取存储器,发射极耦合逻辑,数字主储存器微型电路

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military

MICROCIRCUIT, MEMORY, DIGITAL, ECL, 1K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON

DLA SMD-5962-87002 REV E-2006 硅单块 2KX8双门静态随机存取存储器,氧化物半导体,数字主体储存器微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 DUAL PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON

DLA SMD-5962-86015 REV B-2005 硅单块 64K X1静态随机存取存储器 数字主储存器微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 1, STATIC RAM, MONOLITHIC SILICON

DLA SMD-5962-91508 REV D-2013 微电路、存储器、数字、CMOS、16K X 8 双端口静态随机存取存储器（SRAM）、单片硅

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16K X 8 DUAL PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON

DLA SMD-5962-91593-1993 硅单块 16K X4静态随机存取存储器,双互补金属氧化物半导体,数字主储存器微型电路

This drawing forms a part of a one part - one part number documtation system (see 6.6 herein). Two product assurance classes consisting of military

MICROCIRCUIT, MEMORY, DIGITAL, BICMOS, 16K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON