DLA SMD-5962-90817 REV C-2007 硅单块 高速结型场效应晶体管,双操作增强器,直线型微型电路
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V
MICROCIRCUIT, LINEAR, OPERATIONAL AMPLIFIER, DUAL, JFET, HIGH SPEED, MONOLITHIC SILICON
SJ 50033/89-1995 半导体分立器件.CS6768和CS6770型硅N沟道增强型场效应晶体管详细规范
Semiconductor discrete device.Detail specification for type CS 6768 and CS 6770 silicon N channel enhancement mode field effect transistor
SJ 50033/88-1995 半导体分立器件.CS6760和CS6762型硅N沟道增强型场效应晶体管详细规范
Semiconductor discrete device.Detail specification for type CS6760 and CS6762 silicon N-channel enhacement mode field-effect transistor
SJ 50033/83-1995 半导体分立器件.CS139型硅P沟道MOS增强型场效应晶体管详细规范
Semiconductor discrete device.Detail specification for type CS139 silicon P-channel MOS enhancement mode field-effect transistor
DLA SMD-5962-90807 REV D-2002 硅单块 操作增强器,微功率结型场效应晶体管直线型微型电路
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class
MICROCIRCUIT, LINEAR, JFET, MICROPOWER, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-90808 REV C-2002 硅单块 操作增强器,双微功率结型场效应晶体管直线型微型电路
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class
MICROCIRCUIT, LINEAR, JFET, MICROPOWER, DUAL, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-90809 REV E-2006 硅单块 操作增强器,四列微功率结型场效应晶体管直线型微型电路
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V
MICROCIRCUIT, LINEAR, JFET, MICROPOWER, QUAD, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
GOST 17466-1980 双极型和场效应晶体管.基本参数
Transistors bipolar and field-effect. Basic parameters
JEDEC JES2-1992 电晶体,砷化镓场效应晶体管,总规范
This specification establishes guideline requirements and quality assurance provisions for gallium arsenide power field-effect transistors (FETs
Transistor, Gallium Arsenide Power Fet, Generic Specification
KS C 5202-1980(2000 可靠性保证场效应晶体管
RELIABILITY ASSURED FIELD-EFFECT TRANSISTORS
DLA SMD-5962-90861 REV A-1996 硅单块 单一或双或四列操作增强器,结型场效应晶体管低功率,直线式微型电路
This drawing forms a part of a one part - one part mmber docunentation system (see 6.6 herein). Two product assurance classes consisting of military
MICROCIRCUIT, LINEAR, J-FET LOW POWER, SINGLE/DUAL/QUAD OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
JUS N.R1.353-1979 半导体装置的字母符号．双极场效应和场效应晶体管
Letter symbohfor semiconductor devices. Bipolar andfield-effect transistors.
GB/T 4586-1994 半导体器件 分立器件 第8部分:场效应晶体管
通常，本标准需要与IEC 747-1-1983《半导体器件 分立器件和集成电路 第1部分：总则》一起使用。在IEC 747-1中，可找到下列的全部基础资料： --术语； --文字符号； --基本额定值和特性； --测试方法
Semiconductor devices. Discrete devices. Part 8: Field-effect transistors
DLA SMD-5962-89659-1990 场效应晶体管缓冲器线性混合微型电路
THIS DRAWING IS AVAILABLE :OR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE
MICROCIRCUIT, LINEAR, FET BUFFER, HYBRID
GJB/Z 41.4-1993 军用半导体分立器件系列型谱 场效应晶体管
Military semiconductor discrete device series spectrum field effect transistor
DLA SMD-5962-90817 REV C-2007 硅单块 高速结型场效应晶体管,双操作增强器,直线型微型电路
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V
MICROCIRCUIT, LINEAR, OPERATIONAL AMPLIFIER, DUAL, JFET, HIGH SPEED, MONOLITHIC SILICON
SJ 50033/89-1995 半导体分立器件.CS6768和CS6770型硅N沟道增强型场效应晶体管详细规范
Semiconductor discrete device.Detail specification for type CS 6768 and CS 6770 silicon N channel enhancement mode field effect transistor
SJ 50033/88-1995 半导体分立器件.CS6760和CS6762型硅N沟道增强型场效应晶体管详细规范
Semiconductor discrete device.Detail specification for type CS6760 and CS6762 silicon N-channel enhacement mode field-effect transistor
SJ 50033/83-1995 半导体分立器件.CS139型硅P沟道MOS增强型场效应晶体管详细规范
Semiconductor discrete device.Detail specification for type CS139 silicon P-channel MOS enhancement mode field-effect transistor
DLA SMD-5962-90807 REV D-2002 硅单块 操作增强器,微功率结型场效应晶体管直线型微型电路
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class
MICROCIRCUIT, LINEAR, JFET, MICROPOWER, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-90808 REV C-2002 硅单块 操作增强器,双微功率结型场效应晶体管直线型微型电路
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class
MICROCIRCUIT, LINEAR, JFET, MICROPOWER, DUAL, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-90809 REV E-2006 硅单块 操作增强器,四列微功率结型场效应晶体管直线型微型电路
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V
MICROCIRCUIT, LINEAR, JFET, MICROPOWER, QUAD, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
GOST 17466-1980 双极型和场效应晶体管.基本参数
Transistors bipolar and field-effect. Basic parameters
JEDEC JES2-1992 电晶体,砷化镓场效应晶体管,总规范
This specification establishes guideline requirements and quality assurance provisions for gallium arsenide power field-effect transistors (FETs
Transistor, Gallium Arsenide Power Fet, Generic Specification
KS C 5202-1980(2000 可靠性保证场效应晶体管
RELIABILITY ASSURED FIELD-EFFECT TRANSISTORS
DLA SMD-5962-90861 REV A-1996 硅单块 单一或双或四列操作增强器,结型场效应晶体管低功率,直线式微型电路
This drawing forms a part of a one part - one part mmber docunentation system (see 6.6 herein). Two product assurance classes consisting of military
MICROCIRCUIT, LINEAR, J-FET LOW POWER, SINGLE/DUAL/QUAD OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
JUS N.R1.353-1979 半导体装置的字母符号．双极场效应和场效应晶体管
Letter symbohfor semiconductor devices. Bipolar andfield-effect transistors.
GB/T 4586-1994 半导体器件 分立器件 第8部分:场效应晶体管
通常，本标准需要与IEC 747-1-1983《半导体器件 分立器件和集成电路 第1部分：总则》一起使用。在IEC 747-1中，可找到下列的全部基础资料： --术语； --文字符号； --基本额定值和特性； --测试方法
Semiconductor devices. Discrete devices. Part 8: Field-effect transistors
DLA SMD-5962-89659-1990 场效应晶体管缓冲器线性混合微型电路
THIS DRAWING IS AVAILABLE :OR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE
MICROCIRCUIT, LINEAR, FET BUFFER, HYBRID
GJB/Z 41.4-1993 军用半导体分立器件系列型谱 场效应晶体管
Military semiconductor discrete device series spectrum field effect transistor
编辑：北检院编辑部
