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SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER, TYPES 2N930 AND 2N930UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
Semiconductor Device, Transistor, Plastic, NPN, Silicon, Switching, Type 2N3700UE1, JAN, JANTX, JANJ
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING, TYPES: 2N4150, 2N5237, 2N5238, 2N4150S, 2N5237S, AND 2N5238S, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCA, JANHCB, JANKCA, JANKCB, JANKCM, JANKC
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N5002 AND 2N5004, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCB, JANKCB, JANKCBM, JANKCBD, JANKCBP, JANKCBL, JANKCBR, JANKCBF, JANKCBG, AND JANKCBH
Semiconductor devices. Discrete devices. Bipolar transistors
Niniejsza norma jest t?umaczeniem angielskiej wersji normy mi?dzynarodowej IEC Publication 747-7 (1988) Semiconductor discrete devices and integrated
Semiconductor devices Bipolar transistors Measuring methods
Semiconductor devices. Discrete devices. Bipolar transistors
이 규격은 반도체 소자 중 다음과 같은 바이폴러 트랜지스터에 대한 표준을 제공한다.-저
Semiconductor devices－Discrete devices－Part 7：Bipolar transistors
The present standard gives the requirements applicable to the following sub-categories of bipolar transistors: - low power signal transistors
Semiconductor devices - Part 7: Bipolar transistors
Semiconductor devices.part 7: bipolar transistors
Semiconductor devices－Discrete devices－Part 7：Bipolar transistors－Section three：Blank detail specification for bipolar transistors for switching applications
本标准规定了半导体光电二极管和光电晶体管(以下简称“器件”)光电参数的测试方法。本标准适用于半导体光电二极管和光电晶体管光电参数的测试。本标准不适用PIN、雪崩光电二极管的测试
Measuring methods for semiconductor photodiode and phototransistor
This part of IEC 60747 gives requirements for the following categories of discrete devices: – variable capacitance diodes and snap-off diodes
Semiconductor devices - Discrete devices - Microwave diodes and transistors
This part of IEC 60747 provides standards for the following categories of discrete semiconductor devices: - (reverse-blocking) (triode) thyristors
Semiconductor devices - Part 6: Thyristors
本标准规定了双极型电力晶体管单相桥和三相桥模块(带续流二极管)的电特性、热特性和额定值的测试方法及热循环负载试验方法。 本标准适用于电流为5A及5A以上外壳额定的NPN型电力晶体管管芯组成的单相桥和三相桥模块。双极型电力晶体管组成的单相桥和三相桥组件也可参照使用。 只要
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER, TYPES 2N930 AND 2N930UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
Semiconductor Device, Transistor, Plastic, NPN, Silicon, Switching, Type 2N3700UE1, JAN, JANTX, JANJ
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING, TYPES: 2N4150, 2N5237, 2N5238, 2N4150S, 2N5237S, AND 2N5238S, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCA, JANHCB, JANKCA, JANKCB, JANKCM, JANKC
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N5002 AND 2N5004, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCB, JANKCB, JANKCBM, JANKCBD, JANKCBP, JANKCBL, JANKCBR, JANKCBF, JANKCBG, AND JANKCBH
Semiconductor devices. Discrete devices. Bipolar transistors
Niniejsza norma jest t?umaczeniem angielskiej wersji normy mi?dzynarodowej IEC Publication 747-7 (1988) Semiconductor discrete devices and integrated
Semiconductor devices Bipolar transistors Measuring methods
Semiconductor devices. Discrete devices. Bipolar transistors
이 규격은 반도체 소자 중 다음과 같은 바이폴러 트랜지스터에 대한 표준을 제공한다.-저
Semiconductor devices－Discrete devices－Part 7：Bipolar transistors
The present standard gives the requirements applicable to the following sub-categories of bipolar transistors: - low power signal transistors
Semiconductor devices - Part 7: Bipolar transistors
Semiconductor devices.part 7: bipolar transistors
Semiconductor devices－Discrete devices－Part 7：Bipolar transistors－Section three：Blank detail specification for bipolar transistors for switching applications
本标准规定了半导体光电二极管和光电晶体管(以下简称“器件”)光电参数的测试方法。本标准适用于半导体光电二极管和光电晶体管光电参数的测试。本标准不适用PIN、雪崩光电二极管的测试
Measuring methods for semiconductor photodiode and phototransistor
This part of IEC 60747 gives requirements for the following categories of discrete devices: – variable capacitance diodes and snap-off diodes
Semiconductor devices - Discrete devices - Microwave diodes and transistors
This part of IEC 60747 provides standards for the following categories of discrete semiconductor devices: - (reverse-blocking) (triode) thyristors
Semiconductor devices - Part 6: Thyristors
本标准规定了双极型电力晶体管单相桥和三相桥模块(带续流二极管)的电特性、热特性和额定值的测试方法及热循环负载试验方法。 本标准适用于电流为5A及5A以上外壳额定的NPN型电力晶体管管芯组成的单相桥和三相桥模块。双极型电力晶体管组成的单相桥和三相桥组件也可参照使用。 只要
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