半导体 二极管检测

JUS A.A4.302-1990 半导体二极管特性表

Tabular layouts ofarticle characteristics for semiconductor diodes

GOST 17465-1980 半导体二极管.基本参数

Semiconductor diodes. Basic parameters

GOST 18986.10-1974 半导体二极管.电感测量方法

Настоящий стандарт распространяется на все типы полупроводниковых диодов в корпусе, у которых индуктивность более 0,1

Semiconductor diodes. Methods for measuring inductance

CSN 35 8732-1964 半导体二极管．正向电流测量

Semiconductor diodes. Measurement of forward current

CSN 35 8736-1964 半导体二极管．极间电容的测量

Semiconductor diodes. Measurement of interelectrode capacitanoe

SJ 20788-2000 半导体二极管热阻抗测试方法

Measurment method for thermal impedance of semiconductor diodes

GOST 18986.4-1973 半导体二极管.电容的测定方法

Semiconductor diodes. Methods for measuring capacitance

GOST 18986.6-1973 半导体二极管.恢复充电测定方法

Semiconductor diodes. Method for measuring recovery charge

SIS SS CECC 50001-1981 空白详细规范．通用半导体二极管

Blank detail specification: General purpose semiconductor diodes Vordruck fur Bauartspezi fika tion: Allzweck—Halbleiterdioden

GOST 18986.24-1983 半导体二极管.击穿电压测量方法

Semiconductor diodes. Measurement method of breakdown voltage

GOST 18986.0-1974 半导体二极管.电参数测定方法.总则

Semiconductor diodes. Measuring methods for electrical parameters. General requirements

CSN 35 8767-1982 半导体二极管．电气参数的测量方法

Schválenie ST SEV 2769-80 odporu?ilo Federálně ministerstvo elektrotechnického priemyslu. Spracovatel: TESLA Pie??any, koncernov? podnik Ing. Jozef

Semiconductor diodes Methods of electrical parameters measurement

GOST 18986.5-1973 半导体二极管.断开时间的测定方法

Semiconductor diodes. Method for measuring transition time

GOST 20215-1984 超高频半导体二极管.一般技术条件

Semiconductor microwave diodes. General specifications

CSN 35 8735-1964 半导体二极管．直流电流和电压的测量

Semiconductor diodes. Measurement of d. c. currents and voltages

JUS A.A4.302-1990 半导体二极管特性表

Tabular layouts ofarticle characteristics for semiconductor diodes

GOST 17465-1980 半导体二极管.基本参数

Semiconductor diodes. Basic parameters

GOST 18986.10-1974 半导体二极管.电感测量方法

Настоящий стандарт распространяется на все типы полупроводниковых диодов в корпусе, у которых индуктивность более 0,1

Semiconductor diodes. Methods for measuring inductance

CSN 35 8732-1964 半导体二极管．正向电流测量

Semiconductor diodes. Measurement of forward current

CSN 35 8736-1964 半导体二极管．极间电容的测量

Semiconductor diodes. Measurement of interelectrode capacitanoe

SJ 20788-2000 半导体二极管热阻抗测试方法

Measurment method for thermal impedance of semiconductor diodes

GOST 18986.4-1973 半导体二极管.电容的测定方法

Semiconductor diodes. Methods for measuring capacitance

GOST 18986.6-1973 半导体二极管.恢复充电测定方法

Semiconductor diodes. Method for measuring recovery charge

SIS SS CECC 50001-1981 空白详细规范．通用半导体二极管

Blank detail specification: General purpose semiconductor diodes Vordruck fur Bauartspezi fika tion: Allzweck—Halbleiterdioden

GOST 18986.24-1983 半导体二极管.击穿电压测量方法

Semiconductor diodes. Measurement method of breakdown voltage

GOST 18986.0-1974 半导体二极管.电参数测定方法.总则

Semiconductor diodes. Measuring methods for electrical parameters. General requirements

CSN 35 8767-1982 半导体二极管．电气参数的测量方法

Schválenie ST SEV 2769-80 odporu?ilo Federálně ministerstvo elektrotechnického priemyslu. Spracovatel: TESLA Pie??any, koncernov? podnik Ing. Jozef

Semiconductor diodes Methods of electrical parameters measurement

GOST 18986.5-1973 半导体二极管.断开时间的测定方法

Semiconductor diodes. Method for measuring transition time

GOST 20215-1984 超高频半导体二极管.一般技术条件

Semiconductor microwave diodes. General specifications

CSN 35 8735-1964 半导体二极管．直流电流和电压的测量

Semiconductor diodes. Measurement of d. c. currents and voltages