发布时间:2024-05-27 17:49:26 - 更新时间:2024年06月29日 15:22
点击量:0
本标准规定了工作频率在10到40kHz范围的快速型绝缘栅双极型晶体管的型号、外形尺寸、额定值、特性、试验方法和检验规则等
Insulated gate bipolar transistor
Measuring methods for insulated-gate bipolar transistor
本标准规定了工作频率在10到40kHz范围的快速型绝缘栅双极型晶体管的臂和臂对模块的型号、外形尺寸、额定值和特性、试验方法和检验规则等
Insulated gate bipolar transistor modules arm and pair of arms
本文件规定了绝缘栅双极型晶体管(简称 IGBT)用有机硅凝胶的技术要求、试验方法、检验规则、标志、包装、运输和贮存。 本文件适用于各种IGBT模块用的双组分加成型有机硅凝胶
Terminology and letter symbols for insulated-gate bipolar transistor
Speciation for verification of DC parameter testing system for isolated gate bipolar transistors
Surface mounting technology.discrete devices.part 9: insulated.gate bipolar transistors (igbts)
本标准适用于电网用电力电子装置用的压接型IGBT模块,其它新型IGBT模块如增强注入型IGBT(IEGT)、双模式绝缘栅晶体管(BIGT)等模块也可参照此标准。 本标准介绍了压接型IGBT模块高温反偏试验的相关内容,包含适用范围、相关术语的定义、设备要求、试验流程、冷却、测试以及失效标准等技术内容
Test specification of high temperature reverse bias for press pack insulated-gate bipolar transistor modules
本标准规定了柔性输电用压接型绝缘栅双极晶体管的型号、尺寸、额定值、特性参数、检验、标志和订货单的技术要求
This part of IEC 60747 gives product specific standards for terminology,letter symbols, essential ratings and characteristics,verification of ratings
Semiconductor devices - Discrete devices - Insulated-gate bipolar transistors (IGBTs)
Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
本标准给出了绝缘栅双极晶体管(IGBT)的术语、文字符号、基本额定值和特性以及测试方法等产品特定要求
Semiconductor devices.Discrete devices.Part 9:Insulated-gate bipolar transistors (IGBT)
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
This part of IEC 60747 gives product specific standards for terminology,letter symbols, essential ratings and characteristics,verification of ratings
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
本标准规定了工作频率在10到40kHz范围的快速型绝缘栅双极型晶体管的型号、外形尺寸、额定值、特性、试验方法和检验规则等
Insulated gate bipolar transistor
Measuring methods for insulated-gate bipolar transistor
本标准规定了工作频率在10到40kHz范围的快速型绝缘栅双极型晶体管的臂和臂对模块的型号、外形尺寸、额定值和特性、试验方法和检验规则等
Insulated gate bipolar transistor modules arm and pair of arms
本文件规定了绝缘栅双极型晶体管(简称 IGBT)用有机硅凝胶的技术要求、试验方法、检验规则、标志、包装、运输和贮存。 本文件适用于各种IGBT模块用的双组分加成型有机硅凝胶
Terminology and letter symbols for insulated-gate bipolar transistor
Speciation for verification of DC parameter testing system for isolated gate bipolar transistors
Surface mounting technology.discrete devices.part 9: insulated.gate bipolar transistors (igbts)
本标准适用于电网用电力电子装置用的压接型IGBT模块,其它新型IGBT模块如增强注入型IGBT(IEGT)、双模式绝缘栅晶体管(BIGT)等模块也可参照此标准。 本标准介绍了压接型IGBT模块高温反偏试验的相关内容,包含适用范围、相关术语的定义、设备要求、试验流程、冷却、测试以及失效标准等技术内容
Test specification of high temperature reverse bias for press pack insulated-gate bipolar transistor modules
本标准规定了柔性输电用压接型绝缘栅双极晶体管的型号、尺寸、额定值、特性参数、检验、标志和订货单的技术要求
This part of IEC 60747 gives product specific standards for terminology,letter symbols, essential ratings and characteristics,verification of ratings
Semiconductor devices - Discrete devices - Insulated-gate bipolar transistors (IGBTs)
Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
本标准给出了绝缘栅双极晶体管(IGBT)的术语、文字符号、基本额定值和特性以及测试方法等产品特定要求
Semiconductor devices.Discrete devices.Part 9:Insulated-gate bipolar transistors (IGBT)
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
This part of IEC 60747 gives product specific standards for terminology,letter symbols, essential ratings and characteristics,verification of ratings
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)