SJ 20789-2000 MOS场效应晶体管热敏参数快速筛选试验方法
本规范规定了MOS场效应晶体管热敏参数快速筛选的试验方法。 本规范适用于MOS场效应晶体管热敏参数快速筛选
Rapid screening test methods for Thermal sensitive parameter of MOS field effect transistor
SJ 50033/84-1995 半导体分立器件.CS140型硅N沟道MOS耗尽型场效应晶体管.详细规范
Semiconductor discrete device.Detail specification for type CS140 Silicon N-channel MOS deplition mode field-effect transistor
SJ 50033/83-1995 半导体分立器件.CS139型硅P沟道MOS增强型场效应晶体管详细规范
Semiconductor discrete device.Detail specification for type CS139 silicon P-channel MOS enhancement mode field-effect transistor
SJ 50033/85-1995 半导体分立器件.CS141型硅N沟道MOS耗尽型场效应晶体管详细规范
Semiconductor discrete device.Detail specification for type CS141 silicon N-channel MOS deplition mode field-effect transistor
QJ/Z 33-1977 埸效应数字集成（P-MOS）电路测试方法
Field effect digital integration (P-MOS) circuit test method
JUS N.R1.353-1979 半导体装置的字母符号．双极场效应和场效应晶体管
Letter symbohfor semiconductor devices. Bipolar andfield-effect transistors.
JUS N.R1.323-1979 半导体装置的术语及定义．双极场效应及场效应晶体管
Termsand definitions for semiconductor devices. Bipolar and field-effect transistors.
SJ 1974-1981 CS1型低频场效应半导体管
Detail specification for low frequency field-effect transistors,Type CS1
SJ 1975-1981 CS2型低频场效应半导体管
Detail specification for low frequency field-effect transistors,Type CS2
SJ 1976-1981 CS3型低频场效应半导体管
Detail specification for low frequency field-effect transistors,Type CS3
SJ 1977-1981 CS4型高频场效应半导体管
Detail specification for high frequency field-effect transistors,Type CS4
SJ 1978-1981 CS5型高频场效应半导体管
Detail specification for high frequency field-effect transistors,Type CS5
SJ 1979-1981 CS6型高频场效应半导体管
Detail specification for high frequency field-effect transistors,Type CS6
SJ 1980-1981 CS7型高频场效应半导体管
Detail specification for high frequency field-effect transistors,Type CS7
SJ 1981-1981 CS8型高频场效应半导体管
Detail specification for high frequency field-effect transistors,Type CS8
SJ 20789-2000 MOS场效应晶体管热敏参数快速筛选试验方法
本规范规定了MOS场效应晶体管热敏参数快速筛选的试验方法。 本规范适用于MOS场效应晶体管热敏参数快速筛选
Rapid screening test methods for Thermal sensitive parameter of MOS field effect transistor
SJ 50033/84-1995 半导体分立器件.CS140型硅N沟道MOS耗尽型场效应晶体管.详细规范
Semiconductor discrete device.Detail specification for type CS140 Silicon N-channel MOS deplition mode field-effect transistor
SJ 50033/83-1995 半导体分立器件.CS139型硅P沟道MOS增强型场效应晶体管详细规范
Semiconductor discrete device.Detail specification for type CS139 silicon P-channel MOS enhancement mode field-effect transistor
SJ 50033/85-1995 半导体分立器件.CS141型硅N沟道MOS耗尽型场效应晶体管详细规范
Semiconductor discrete device.Detail specification for type CS141 silicon N-channel MOS deplition mode field-effect transistor
QJ/Z 33-1977 埸效应数字集成（P-MOS）电路测试方法
Field effect digital integration (P-MOS) circuit test method
JUS N.R1.353-1979 半导体装置的字母符号．双极场效应和场效应晶体管
Letter symbohfor semiconductor devices. Bipolar andfield-effect transistors.
JUS N.R1.323-1979 半导体装置的术语及定义．双极场效应及场效应晶体管
Termsand definitions for semiconductor devices. Bipolar and field-effect transistors.
SJ 1974-1981 CS1型低频场效应半导体管
Detail specification for low frequency field-effect transistors,Type CS1
SJ 1975-1981 CS2型低频场效应半导体管
Detail specification for low frequency field-effect transistors,Type CS2
SJ 1976-1981 CS3型低频场效应半导体管
Detail specification for low frequency field-effect transistors,Type CS3
SJ 1977-1981 CS4型高频场效应半导体管
Detail specification for high frequency field-effect transistors,Type CS4
SJ 1978-1981 CS5型高频场效应半导体管
Detail specification for high frequency field-effect transistors,Type CS5
SJ 1979-1981 CS6型高频场效应半导体管
Detail specification for high frequency field-effect transistors,Type CS6
SJ 1980-1981 CS7型高频场效应半导体管
Detail specification for high frequency field-effect transistors,Type CS7
SJ 1981-1981 CS8型高频场效应半导体管
Detail specification for high frequency field-effect transistors,Type CS8
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