JUS N.R1.450-1981 双极晶体管．测量方法
Bipolar transistors. Measuring methods
JUS N.R1.471-1985 双极晶体管．参考测量方法
Bipolar transistors. Reference methods of measurement
JEDEC JESD24-12-2004 绝缘双极晶体管的热阻抗测量
The purpose of this test method is to measure the thermal impedance of the IGBT (Insulated Gate Bipolar Transistor) under the specified conditions
Thermal Impedance Measurement for Insulated Gate Bipolar Transistors (Delta VCE(on) Method) (This is an alternative method to JEDEC Standard No. 24-6)
PN T01210-01-1992 半导体器件．分离器件．双极晶体管．低频放大箱额定的双极晶体管空白细节规格
Semiconductor devices Discrete devices Bipolar transistors Blank detail specification for case-rated bipolar transistors for low-frequency amplification
BS IEC 60747-7:2011 半导体器件 分立器件 双极晶体管
Semiconductor devices. Discrete devices. Bipolar transistors
IEC 60747-7:2000 半导体装置.第7部分:双极晶体管
The present standard gives the requirements applicable to the following sub-categories of bipolar transistors: - low power signal transistors
Semiconductor devices - Part 7: Bipolar transistors
PN T01208-03-1992 半导体装置．双极晶体管．测量方法
Niniejsza norma jest t?umaczeniem angielskiej wersji normy mi?dzynarodowej IEC Publication 747-7 (1988) Semiconductor discrete devices and integrated
Semiconductor devices Bipolar transistors Measuring methods
BS IEC 60747-7:2010 半导体器件.分立器件.双极晶体管
Semiconductor devices. Discrete devices. Bipolar transistors
KS C IEC 60747-7:2006 半导体器件.第7部分:双极晶体管
이 규격은 반도체 소자 중 다음과 같은 바이폴러 트랜지스터에 대한 표준을 제공한다.-저
Semiconductor devices－Discrete devices－Part 7：Bipolar transistors
KS C IEC 60747-7:2017 半导体器件 第7部分：双极晶体管
Semiconductor devices－Discrete devices－Part 7：Bipolar transistors
BS IEC 60747-7:2010+A1:2019 半导体器件 分立器件 双极晶体管
1 Scope This part of IEC 60747‑7 gives the requirements applicable to the following sub-categories of bipolar transistors excluding
Semiconductor devices. Discrete devices - Bipolar transistors
JEDEC JESD24-4-1990 JESD24的补遗－双极晶体管的热阻测量
JEDEC standards and publications contain material that has been prepared, reviewed, and approved through the JEDEC Board of Directors level
Thermal Impedance Measurements for Bipolar Transistors (Delta Base- Emitter Voltage Method) Addendum to JEDEC JESD 24
GOST 18604.19-1988 双极晶体管 阈值电压的测量方法
Bipolar transistors. Method of measuring threshold voltage
DS/IEC 747-7-3:1993 半导体装置．分立器件．第7部分：双极晶体管．第3节：转换用双极晶体管空白详细规范
Semiconductor devices. Discrete devices. Part 7: Bipolar transistors. Section three: Blank detail specification for bipolar transistors for switching applications
KS C IEC 60747-7-3-2006(2021 半导体器件分立器件第7部分:双极晶体管第三节:开关用双极晶体管空白详细规范
Semiconductor devices－Discrete devices－Part 7：Bipolar transistors－Section three：Blank detail specification for bipolar transistors for switching applications
JUS N.R1.450-1981 双极晶体管．测量方法
Bipolar transistors. Measuring methods
JUS N.R1.471-1985 双极晶体管．参考测量方法
Bipolar transistors. Reference methods of measurement
JEDEC JESD24-12-2004 绝缘双极晶体管的热阻抗测量
The purpose of this test method is to measure the thermal impedance of the IGBT (Insulated Gate Bipolar Transistor) under the specified conditions
Thermal Impedance Measurement for Insulated Gate Bipolar Transistors (Delta VCE(on) Method) (This is an alternative method to JEDEC Standard No. 24-6)
PN T01210-01-1992 半导体器件．分离器件．双极晶体管．低频放大箱额定的双极晶体管空白细节规格
Semiconductor devices Discrete devices Bipolar transistors Blank detail specification for case-rated bipolar transistors for low-frequency amplification
BS IEC 60747-7:2011 半导体器件 分立器件 双极晶体管
Semiconductor devices. Discrete devices. Bipolar transistors
IEC 60747-7:2000 半导体装置.第7部分:双极晶体管
The present standard gives the requirements applicable to the following sub-categories of bipolar transistors: - low power signal transistors
Semiconductor devices - Part 7: Bipolar transistors
PN T01208-03-1992 半导体装置．双极晶体管．测量方法
Niniejsza norma jest t?umaczeniem angielskiej wersji normy mi?dzynarodowej IEC Publication 747-7 (1988) Semiconductor discrete devices and integrated
Semiconductor devices Bipolar transistors Measuring methods
BS IEC 60747-7:2010 半导体器件.分立器件.双极晶体管
Semiconductor devices. Discrete devices. Bipolar transistors
KS C IEC 60747-7:2006 半导体器件.第7部分:双极晶体管
이 규격은 반도체 소자 중 다음과 같은 바이폴러 트랜지스터에 대한 표준을 제공한다.-저
Semiconductor devices－Discrete devices－Part 7：Bipolar transistors
KS C IEC 60747-7:2017 半导体器件 第7部分：双极晶体管
Semiconductor devices－Discrete devices－Part 7：Bipolar transistors
BS IEC 60747-7:2010+A1:2019 半导体器件 分立器件 双极晶体管
1 Scope This part of IEC 60747‑7 gives the requirements applicable to the following sub-categories of bipolar transistors excluding
Semiconductor devices. Discrete devices - Bipolar transistors
JEDEC JESD24-4-1990 JESD24的补遗－双极晶体管的热阻测量
JEDEC standards and publications contain material that has been prepared, reviewed, and approved through the JEDEC Board of Directors level
Thermal Impedance Measurements for Bipolar Transistors (Delta Base- Emitter Voltage Method) Addendum to JEDEC JESD 24
GOST 18604.19-1988 双极晶体管 阈值电压的测量方法
Bipolar transistors. Method of measuring threshold voltage
DS/IEC 747-7-3:1993 半导体装置．分立器件．第7部分：双极晶体管．第3节：转换用双极晶体管空白详细规范
Semiconductor devices. Discrete devices. Part 7: Bipolar transistors. Section three: Blank detail specification for bipolar transistors for switching applications
KS C IEC 60747-7-3-2006(2021 半导体器件分立器件第7部分:双极晶体管第三节:开关用双极晶体管空白详细规范
Semiconductor devices－Discrete devices－Part 7：Bipolar transistors－Section three：Blank detail specification for bipolar transistors for switching applications
编辑：北检院编辑部
