功率二极管检测

SJ 50033/123-1997 半导体分立器件 PIN62317型硅PIN大功率二极管详细规范

Semiconductor discrete device Detail specification for silican power PIN diodes for type PIN62317

SJ 50033/124-1997 半导体分立器件 PIN101～105型硅PIN大功率二极管详细规范

Semiconductor discrete device Detail specification for silicon power PIN diodes for type PIN 101～105

JUS N.R1.422-1980 小功率信号二极管．测量方法

Low-power signal di ode?. Measuring methods

DB35/T 1176-2011 道路照明用功率发光二极管

本标准规定了LED道路、隧道照明用功率发光二极管的要求、试验方法、检验规则和包装贮存运输 要求。 本标准适用于LED 道路、隧道照明用1W 功率发光二极管（仅适应于蓝光LED 芯片激发荧光粉形 成的白光LED）。其他功率的功率发光二极管可参照执行。 室内照明用功率发光二极管可参照执行

Power LEDs for road lighting

NF C96-821:1981 半导体器件大功率整流二极管

Semiconductor Devices High Power rectifier diodes

Semiconductor Devices High Power rectifier diodes

SJ/T 11869-2022 硅衬底白光功率发光二极管芯片详细规范

Detailed specifications for silicon substrate white light power light emitting diode chips

SJ/T 11868-2022 硅衬底蓝光功率发光二极管芯片详细规范

Detailed specifications for silicon substrate blue power light emitting diode chips

SJ/T 11867-2022 硅衬底蓝光小功率发光二极管芯片详细规范

Detailed specifications for silicon substrate blue light low-power light-emitting diode chips

SJ/T 11393-2009 半导体光电子器件 功率发光二极管空白详细规范

Semiconductor optoelectronic devices-Blank detail specification for power light-emitting diodes

GB/T 36358-2018 半导体光电子器件 功率发光二极管空白详细规范

Semiconductor optoelectronic devices—Blank detail specification for power light-emitting diodes

IS 4400 Pt.2-1967 半导体器件测量方法第 Ⅱ 部分低功率信号二极管

1.1 This standard ( Part II) covers methods of measurement on low power signal diodes for characteristics covered by IS: 3700 ( Part II )-1967

SJ/T 11400-2009 半导体光电子器件 小功率发光二极管空白详细规范

Semiconductor optoeletronic devices-Blank detail specification for lower-power light-emitting diodes

GB/T 36359-2018 半导体光电子器件 小功率发光二极管空白详细规范

Semiconductor optoelectronic devices.Blank detail specification for lower power light-emitting diodes

GB/T 36360-2018 半导体光电子器件 中功率发光二极管空白详细规范

Semiconductor optoelectronic devices.Blank detail specification for middle power light-emitting diodes

SJ/T 11866-2022 半导体光电子器件 硅衬底白光功率发光二极管详细规范

Semiconductor optoelectronic devices - Detailed specifications for silicon substrate white light power light emitting diodes

SJ 50033/123-1997 半导体分立器件 PIN62317型硅PIN大功率二极管详细规范

Semiconductor discrete device Detail specification for silican power PIN diodes for type PIN62317

SJ 50033/124-1997 半导体分立器件 PIN101～105型硅PIN大功率二极管详细规范

Semiconductor discrete device Detail specification for silicon power PIN diodes for type PIN 101～105

JUS N.R1.422-1980 小功率信号二极管．测量方法

Low-power signal di ode?. Measuring methods

DB35/T 1176-2011 道路照明用功率发光二极管

本标准规定了LED道路、隧道照明用功率发光二极管的要求、试验方法、检验规则和包装贮存运输 要求。 本标准适用于LED 道路、隧道照明用1W 功率发光二极管（仅适应于蓝光LED 芯片激发荧光粉形 成的白光LED）。其他功率的功率发光二极管可参照执行。 室内照明用功率发光二极管可参照执行

Power LEDs for road lighting

NF C96-821:1981 半导体器件大功率整流二极管

Semiconductor Devices High Power rectifier diodes

Semiconductor Devices High Power rectifier diodes

SJ/T 11869-2022 硅衬底白光功率发光二极管芯片详细规范

Detailed specifications for silicon substrate white light power light emitting diode chips

SJ/T 11868-2022 硅衬底蓝光功率发光二极管芯片详细规范

Detailed specifications for silicon substrate blue power light emitting diode chips

SJ/T 11867-2022 硅衬底蓝光小功率发光二极管芯片详细规范

Detailed specifications for silicon substrate blue light low-power light-emitting diode chips

SJ/T 11393-2009 半导体光电子器件 功率发光二极管空白详细规范

Semiconductor optoelectronic devices-Blank detail specification for power light-emitting diodes

GB/T 36358-2018 半导体光电子器件 功率发光二极管空白详细规范

Semiconductor optoelectronic devices—Blank detail specification for power light-emitting diodes

IS 4400 Pt.2-1967 半导体器件测量方法第 Ⅱ 部分低功率信号二极管

1.1 This standard ( Part II) covers methods of measurement on low power signal diodes for characteristics covered by IS: 3700 ( Part II )-1967

SJ/T 11400-2009 半导体光电子器件 小功率发光二极管空白详细规范

Semiconductor optoeletronic devices-Blank detail specification for lower-power light-emitting diodes

GB/T 36359-2018 半导体光电子器件 小功率发光二极管空白详细规范

Semiconductor optoelectronic devices.Blank detail specification for lower power light-emitting diodes

GB/T 36360-2018 半导体光电子器件 中功率发光二极管空白详细规范

Semiconductor optoelectronic devices.Blank detail specification for middle power light-emitting diodes

SJ/T 11866-2022 半导体光电子器件 硅衬底白光功率发光二极管详细规范

Semiconductor optoelectronic devices - Detailed specifications for silicon substrate white light power light emitting diodes