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Recommendations are provided for the layout and test methods required to characterize properly latchup behavior in CMOS and BiCMOS integrated circuit
IEEE Recommended Practice for Latchup Test Methods for CMOS and BiCMOS Integrated-Circuit Process Characterization
Latch-Up Sensitivity Testing of CMOS/BiCMOS Integrated Circuits Transient Latch-up Testing – Component Level Supply Transient Stimulation
This technical report describes a procedure for measuring latch-up sensitivity of integrated circuits to transients on power supply lines. Circuits
Electrostatic Discharge Sensitivity Testing Latch-Up Sensitivity Testing of CMOS/BiCMOS Integrated Circuits Transient Latch-up Testing – Component Level Supply Transient Stimulation
Recommended Practice for Latchup Test Methods for CMOS and BiCMOS Integrated-Circuit Process Characterization
本标准规定了集成电路(IC)的电流锁定和过压锁定的试验方法。 本标准的目的是建立测试IC锁定试验的方法,用来判断集成电路锁定特性并确定锁定的失效判据。锁定敏感性对于决定产品可靠性、最小故障率(NTF)和过电应力失效(EOS)非常重要。 本试验方法适用于NMOS、CMOS
Integrated circuits latch-up test
IC Latch-Up Test
IC Latch-Up Test
IC Latch-Up Test
IC Latch-Up Test
Integrated circuit lock test method
Building hardware - Requirements and test methods - Multipoint locks, latches and locking plates - Characteristics and test methods; German and English version prEN 15685:2019 / Note: Date of issue 2019-09-06
IC Latch-Up Test (Edition 1.0)
INTRODUCTION Definition Transient latch-up (TLU) is defined as a state in which a low-impedance path@ resulting from a transient overstress
Electrostatic Discharge Sensitivity Testing Transient Latch-up Testing
BS EN 15685. Building hardware. Requirements and test methods. Multipoint locks, latches and locking plates. Characteristics and test methods
Determination of CMOS Latch-up Susceptibility - Transient Latch-up - Technical Report No. 2
Recommendations are provided for the layout and test methods required to characterize properly latchup behavior in CMOS and BiCMOS integrated circuit
IEEE Recommended Practice for Latchup Test Methods for CMOS and BiCMOS Integrated-Circuit Process Characterization
Latch-Up Sensitivity Testing of CMOS/BiCMOS Integrated Circuits Transient Latch-up Testing – Component Level Supply Transient Stimulation
This technical report describes a procedure for measuring latch-up sensitivity of integrated circuits to transients on power supply lines. Circuits
Electrostatic Discharge Sensitivity Testing Latch-Up Sensitivity Testing of CMOS/BiCMOS Integrated Circuits Transient Latch-up Testing – Component Level Supply Transient Stimulation
Recommended Practice for Latchup Test Methods for CMOS and BiCMOS Integrated-Circuit Process Characterization
本标准规定了集成电路(IC)的电流锁定和过压锁定的试验方法。 本标准的目的是建立测试IC锁定试验的方法,用来判断集成电路锁定特性并确定锁定的失效判据。锁定敏感性对于决定产品可靠性、最小故障率(NTF)和过电应力失效(EOS)非常重要。 本试验方法适用于NMOS、CMOS
Integrated circuits latch-up test
IC Latch-Up Test
IC Latch-Up Test
IC Latch-Up Test
IC Latch-Up Test
Integrated circuit lock test method
Building hardware - Requirements and test methods - Multipoint locks, latches and locking plates - Characteristics and test methods; German and English version prEN 15685:2019 / Note: Date of issue 2019-09-06
IC Latch-Up Test (Edition 1.0)
INTRODUCTION Definition Transient latch-up (TLU) is defined as a state in which a low-impedance path@ resulting from a transient overstress
Electrostatic Discharge Sensitivity Testing Transient Latch-up Testing
BS EN 15685. Building hardware. Requirements and test methods. Multipoint locks, latches and locking plates. Characteristics and test methods
Determination of CMOS Latch-up Susceptibility - Transient Latch-up - Technical Report No. 2