ANSI/VITA 57.1-2010 现场可编程门阵列中间层卡(FMC)标准
This specification describes FMC IO modules and introduces an electro-mechanical standard that creates a low overhead protocol bridge between front
FPGA Mezzanine Card (FMC) Standard
SJ/T 11706-2018 半导体集成电路 现场可编程门阵列测试方法
Semiconductor integrated circuit field programmable gate array testing method
T/CIE 151-2022 现场可编程门阵列（FPGA）芯片动态老化试验方法
T/CIE 150-2022 现场可编程门阵列（FPGA）芯片时序可靠性测试规范
DLA SMD-5962-88637 REV D-2010 微电路、存储器、数字、CMOS、现场可编程门阵列、单片硅
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, MONOLITHIC SILICON
DLA SMD-5962-00543 REV C-2003 72,000门单片硅数字存储器微电路 CMOS 现场可编程门阵列
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 72,000 GATES, MONOLITHIC SILICON
DLA SMD-5962-01508 REV D-2005 32,000门单片硅数字存储器微电路CMOS 现场可编程门阵列,
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 32,000 GATES, MONOLITHIC SILICON
DLA SMD-5962-01515 REV E-2005 72,000门单片硅数字存储器微电路 CMOS 现场可编程门阵列
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 72,000 GATES, MONOLITHIC SILICON
DLA SMD-5962-01518 REV D-2006 单片硅32,000门数字存储器微电路CMOS 现场可编程门阵列
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 32,000 GATES, MONOLITHIC SILICON
DLA SMD-5962-08224 REV A-2010 微电路、存储器、数字、CMOS、现场可编程门阵列、4,000,000 个门、单片硅
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 4,000,000 GATES, MONOLITHIC SILICON
DLA SMD-5962-01508 REV E-2010 微电路、存储器、数字、CMOS、现场可编程门阵列、32,000 个门、单片硅
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 32,000 GATES, MONOLITHIC SILICON
DLA SMD-5962-01515 REV F-2010 微电路、存储器、数字、CMOS、现场可编程门阵列、72,000 个门、单片硅
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 72,000 GATES, MONOLITHIC SILICON
DLA SMD-5962-90965 REV H-2011 微电路、存储器、数字、CMOS、现场可编程门阵列、2,000 个门、单片硅
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 2,000 GATES, MONOLITHIC SILICON
DLA SMD-5962-04220 REV D-2012 微电路、存储器、数字、CMOS、现场可编程门阵列、1,000,000 个门、单片硅
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 1,000,000 GATES, MONOLITHIC SILICON
DLA SMD-5962-08224 REV B-2012 微电路、存储器、数字、CMOS、现场可编程门阵列、4,000,000 个门、单片硅
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 4,000,000 GATES, MONOLITHIC SILICON
ANSI/VITA 57.1-2010 现场可编程门阵列中间层卡(FMC)标准
This specification describes FMC IO modules and introduces an electro-mechanical standard that creates a low overhead protocol bridge between front
FPGA Mezzanine Card (FMC) Standard
SJ/T 11706-2018 半导体集成电路 现场可编程门阵列测试方法
Semiconductor integrated circuit field programmable gate array testing method
T/CIE 151-2022 现场可编程门阵列（FPGA）芯片动态老化试验方法
T/CIE 150-2022 现场可编程门阵列（FPGA）芯片时序可靠性测试规范
DLA SMD-5962-88637 REV D-2010 微电路、存储器、数字、CMOS、现场可编程门阵列、单片硅
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, MONOLITHIC SILICON
DLA SMD-5962-00543 REV C-2003 72,000门单片硅数字存储器微电路 CMOS 现场可编程门阵列
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 72,000 GATES, MONOLITHIC SILICON
DLA SMD-5962-01508 REV D-2005 32,000门单片硅数字存储器微电路CMOS 现场可编程门阵列,
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 32,000 GATES, MONOLITHIC SILICON
DLA SMD-5962-01515 REV E-2005 72,000门单片硅数字存储器微电路 CMOS 现场可编程门阵列
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 72,000 GATES, MONOLITHIC SILICON
DLA SMD-5962-01518 REV D-2006 单片硅32,000门数字存储器微电路CMOS 现场可编程门阵列
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 32,000 GATES, MONOLITHIC SILICON
DLA SMD-5962-08224 REV A-2010 微电路、存储器、数字、CMOS、现场可编程门阵列、4,000,000 个门、单片硅
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 4,000,000 GATES, MONOLITHIC SILICON
DLA SMD-5962-01508 REV E-2010 微电路、存储器、数字、CMOS、现场可编程门阵列、32,000 个门、单片硅
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 32,000 GATES, MONOLITHIC SILICON
DLA SMD-5962-01515 REV F-2010 微电路、存储器、数字、CMOS、现场可编程门阵列、72,000 个门、单片硅
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 72,000 GATES, MONOLITHIC SILICON
DLA SMD-5962-90965 REV H-2011 微电路、存储器、数字、CMOS、现场可编程门阵列、2,000 个门、单片硅
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 2,000 GATES, MONOLITHIC SILICON
DLA SMD-5962-04220 REV D-2012 微电路、存储器、数字、CMOS、现场可编程门阵列、1,000,000 个门、单片硅
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 1,000,000 GATES, MONOLITHIC SILICON
DLA SMD-5962-08224 REV B-2012 微电路、存储器、数字、CMOS、现场可编程门阵列、4,000,000 个门、单片硅
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 4,000,000 GATES, MONOLITHIC SILICON
编辑：北检院编辑部
