发布时间：2024-05-27 17:49:26 - 更新时间：2024年06月29日 15:22
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Solar wafers - Part 4-1: Process for measuring the electrical characteristics of silicon wafers - Minority carrier lifetime, Inline measuring method
Solar wafers - Part 4-2: Process for measuring the electrical characteristics of silicon - Minority carrier lifetime, Laboratory measuring method
本标准规定了硅和锗单晶体内少数载流子寿命的测定方法。本标准适用于非本征硅和锗单晶体内载流子复合过程中非平衡少数载流子寿命的测量。 本标准为脉冲光方法。这种方法不破坏试样的内在特性，试样可以重复测试，但要求试样具有特殊的条形尺寸和淹没的表面，见表1。 本标准可测的最低寿命值为10μs，取决于光源的
Test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconduetivity decay
本标准规定了硅和锗单晶体内少数载流子寿命的测量方法。 本标准适用于非本征硅和锗单晶体内载流子复合过程中非平衡少数载流子寿命的测量
Standard test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay
Measuring of minority - carrier lifetime in silicon single crystal by photoconductive decay method
1.1 These test methods cover the measurement of minority carrier lifetime appropriate to carrier recombination processes in bulk specimens
Standard Test Methods for Minority-Carrier Lifetime in Bulk Germanium and Silicon by Measurement of Photoconductivity Decay
本文件描述了用微波光电导法测定碳化硅少数载流子寿命的方法。 本文件适用于少数载流子寿命为20 ns～200 μs的碳化硅晶片的寿命测定及质量评价
Test method for minority carrier lifetime in silicon carbide—microwave photoconductive decay
Measurement method for minority carrier lifetime of solar grade polysilicon block
この規格は，シリコン単結晶中の少数キャリアのパルク再粘合ライフタイム（以下，パルクライフタイム又はτBという。）を直流回路を用いた光導電減衰法によって測定する方法について規定する。なお，測定する単結晶は均一な組成をもち，抵抗率がlΩ·cm以上のものとする
Measuring of minority-carrier lifetime in silicon single crystal by photoconductive decay method
Determination of Minority Carrier Lifetime in Silicon and Germanium by Photoconductivity Decay Method
1 本方法适用于测量均匀掺杂、经过抛光处理的n型或p型硅片的载流子复合寿命。本方法是非破坏性、接触测量。在电导率检测系统的灵敏度足够的条件下，本方法也可应用于测试切割或者经过研磨、腐蚀硅片的载流子复合寿命。 2 被测硅片的室温电阻率下限由检测系统灵敏度的极限确定，通常在0.05•cm～1Ω•cm
Test method for carrier recombination lifetime in silicon wafers by non-contact measurement of photoconductivity decay by microwave reflectance
Measurement of Carrier Recombination Lifetime of Silicon Wafer and Ingot Non-contact Microwave Reflection Photoconductivity Decay Method
이 규격은 실리콘 단결정 중의 소수 캐리어의 벌크 재결합 수명(이하 벌크 수명 또는 tB라
Measuring of minority - carrier lifetime in silicon single crystal by photoconductive decay method
Measuring of minority - carrier lifetime in silicon single crystal by photoconductive decay method
本标准适用于太阳电池用电池用单晶硅片（以下简称鬼片）的检验
Inspection rules for monocrystalline silicon wafers for solar cells
Solar wafers - Part 4-1: Process for measuring the electrical characteristics of silicon wafers - Minority carrier lifetime, Inline measuring method
Solar wafers - Part 4-2: Process for measuring the electrical characteristics of silicon - Minority carrier lifetime, Laboratory measuring method
本标准规定了硅和锗单晶体内少数载流子寿命的测定方法。本标准适用于非本征硅和锗单晶体内载流子复合过程中非平衡少数载流子寿命的测量。 本标准为脉冲光方法。这种方法不破坏试样的内在特性，试样可以重复测试，但要求试样具有特殊的条形尺寸和淹没的表面，见表1。 本标准可测的最低寿命值为10μs，取决于光源的
Test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconduetivity decay
本标准规定了硅和锗单晶体内少数载流子寿命的测量方法。 本标准适用于非本征硅和锗单晶体内载流子复合过程中非平衡少数载流子寿命的测量
Standard test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay
Measuring of minority - carrier lifetime in silicon single crystal by photoconductive decay method
1.1 These test methods cover the measurement of minority carrier lifetime appropriate to carrier recombination processes in bulk specimens
Standard Test Methods for Minority-Carrier Lifetime in Bulk Germanium and Silicon by Measurement of Photoconductivity Decay
本文件描述了用微波光电导法测定碳化硅少数载流子寿命的方法。 本文件适用于少数载流子寿命为20 ns～200 μs的碳化硅晶片的寿命测定及质量评价
Test method for minority carrier lifetime in silicon carbide—microwave photoconductive decay
Measurement method for minority carrier lifetime of solar grade polysilicon block
この規格は，シリコン単結晶中の少数キャリアのパルク再粘合ライフタイム（以下，パルクライフタイム又はτBという。）を直流回路を用いた光導電減衰法によって測定する方法について規定する。なお，測定する単結晶は均一な組成をもち，抵抗率がlΩ·cm以上のものとする
Measuring of minority-carrier lifetime in silicon single crystal by photoconductive decay method
Determination of Minority Carrier Lifetime in Silicon and Germanium by Photoconductivity Decay Method
1 本方法适用于测量均匀掺杂、经过抛光处理的n型或p型硅片的载流子复合寿命。本方法是非破坏性、接触测量。在电导率检测系统的灵敏度足够的条件下，本方法也可应用于测试切割或者经过研磨、腐蚀硅片的载流子复合寿命。 2 被测硅片的室温电阻率下限由检测系统灵敏度的极限确定，通常在0.05•cm～1Ω•cm
Test method for carrier recombination lifetime in silicon wafers by non-contact measurement of photoconductivity decay by microwave reflectance
Measurement of Carrier Recombination Lifetime of Silicon Wafer and Ingot Non-contact Microwave Reflection Photoconductivity Decay Method
이 규격은 실리콘 단결정 중의 소수 캐리어의 벌크 재결합 수명(이하 벌크 수명 또는 tB라
Measuring of minority - carrier lifetime in silicon single crystal by photoconductive decay method
Measuring of minority - carrier lifetime in silicon single crystal by photoconductive decay method
本标准适用于太阳电池用电池用单晶硅片（以下简称鬼片）的检验
Inspection rules for monocrystalline silicon wafers for solar cells
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