发布时间：2024-05-27 17:49:26 - 更新时间：2024年06月29日 15:22
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Silicon carbide high temperature ceramic filter element
本标准规定了高炉用碳化硅-碳质捣打料的分类、技术要求、试验方法、质量评定程序、包装、标志、运输、储存及质量证明书。本标准适用于高炉冷却壁及相关部位用碳化硅-碳质捣打料
Silicon carbide-carbon ramming materials for blast furnace
本标准规定了4H-N型重掺杂碳化硅衬底（N型掺杂浓度>5×1018 cm-3）上同质外延层（掺 杂浓度5×1014cm-3-5×1016 cm-3）厚度的红外反射测量方法。 本标准适用于2-100微米的碳化硅外延层。 本标准规定的方法是 4H 碳化硅衬底
Test method for thickness of 4H silicon carbide homo-epitaxial layers by infrared reflectance
What is BS IEC 63068-1 - Silicon carbide homoepitaxial wafer about? BS IEC 63068-1 is the first part of an international standard
Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Classification of defects
General technical requirements for 4H SiC N-type homoepitaxial wafers
What is BS IEC 63068 ‑ 3 about? BS IEC 63068 ‑ 3 is the international standard for semiconductors devices that specifies
Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Test method for defects using photoluminescence
What is BS IEC 63068 ‑ 2 - Silicon carbide homoepitaxial (SiC) wafer about? BS IEC 63068 is a series of international
Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Test method for defects using optical inspection
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects
Refractory products. Chemical analysis of aluminous, siliceous, silicon carbide, carbon and metallic silicon refractory products.
Product quality classification of silicon carbide sealing rings for mechanical seals
This part of IEC 63068 provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC
Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 4: Procedure for identifying and evaluating defects using a comb
BS IEC 63068-3. Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices. Part 3. Test method for defects using photoluminescence
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence
本标准规定了碳化硅单晶抛光片(以下简称“抛光片”)表面质量的目视检验方法。本标准适用于单面或者双面抛光的碳化硅单晶抛光片表面质量的检测
Test method for measuring surface quality of polished monocrystalline silicon carbide
Silicon carbide high temperature ceramic filter element
本标准规定了高炉用碳化硅-碳质捣打料的分类、技术要求、试验方法、质量评定程序、包装、标志、运输、储存及质量证明书。本标准适用于高炉冷却壁及相关部位用碳化硅-碳质捣打料
Silicon carbide-carbon ramming materials for blast furnace
本标准规定了4H-N型重掺杂碳化硅衬底（N型掺杂浓度>5×1018 cm-3）上同质外延层（掺 杂浓度5×1014cm-3-5×1016 cm-3）厚度的红外反射测量方法。 本标准适用于2-100微米的碳化硅外延层。 本标准规定的方法是 4H 碳化硅衬底
Test method for thickness of 4H silicon carbide homo-epitaxial layers by infrared reflectance
What is BS IEC 63068-1 - Silicon carbide homoepitaxial wafer about? BS IEC 63068-1 is the first part of an international standard
Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Classification of defects
General technical requirements for 4H SiC N-type homoepitaxial wafers
What is BS IEC 63068 ‑ 3 about? BS IEC 63068 ‑ 3 is the international standard for semiconductors devices that specifies
Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Test method for defects using photoluminescence
What is BS IEC 63068 ‑ 2 - Silicon carbide homoepitaxial (SiC) wafer about? BS IEC 63068 is a series of international
Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Test method for defects using optical inspection
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects
Refractory products. Chemical analysis of aluminous, siliceous, silicon carbide, carbon and metallic silicon refractory products.
Product quality classification of silicon carbide sealing rings for mechanical seals
This part of IEC 63068 provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC
Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 4: Procedure for identifying and evaluating defects using a comb
BS IEC 63068-3. Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices. Part 3. Test method for defects using photoluminescence
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence
本标准规定了碳化硅单晶抛光片(以下简称“抛光片”)表面质量的目视检验方法。本标准适用于单面或者双面抛光的碳化硅单晶抛光片表面质量的检测
Test method for measuring surface quality of polished monocrystalline silicon carbide
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