GB/T 32978-2016 碳化硅质高温陶瓷过滤元件
Silicon carbide high temperature ceramic filter element
YB/T 4349-2013 高炉用碳化硅-碳质捣打料
本标准规定了高炉用碳化硅-碳质捣打料的分类、技术要求、试验方法、质量评定程序、包装、标志、运输、储存及质量证明书。本标准适用于高炉冷却壁及相关部位用碳化硅-碳质捣打料
Silicon carbide-carbon ramming materials for blast furnace
T/IAWBS 007-2018 4H 碳化硅同质外延层厚度的红外反射测量方法
本标准规定了4H-N型重掺杂碳化硅衬底（N型掺杂浓度>5×1018 cm-3）上同质外延层（掺 杂浓度5×1014cm-3-5×1016 cm-3）厚度的红外反射测量方法。 本标准适用于2-100微米的碳化硅外延层。 本标准规定的方法是 4H 碳化硅衬底
Test method for thickness of 4H silicon carbide homo-epitaxial layers by infrared reflectance
BS IEC 63068-1:2019 半导体器件 功率器件用碳化硅同质外延片缺陷损识别标准 缺陷分类
What is BS IEC 63068-1 - Silicon carbide homoepitaxial wafer about? BS IEC 63068-1 is the first part of an international standard
Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Classification of defects
DB13/T 5118-2019 4H 碳化硅 N 型同质外延片通用技术要求
General technical requirements for 4H SiC N-type homoepitaxial wafers
BS IEC 63068-3:2020 半导体器件 功率器件用碳化硅同质外延片缺陷损识别标准光致发光缺陷测试方法
What is BS IEC 63068 ‑ 3 about? BS IEC 63068 ‑ 3 is the international standard for semiconductors devices that specifies
Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Test method for defects using photoluminescence
BS IEC 63068-2:2019 半导体器件 功率器件用碳化硅同质外延片缺陷损识别标准 光学检测缺陷测试方法
What is BS IEC 63068 ‑ 2 - Silicon carbide homoepitaxial (SiC) wafer about? BS IEC 63068 is a series of international
Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Test method for defects using optical inspection
IEC 63068-1:2019 半导体器件.功率器件用碳化硅同质外延片中缺陷的损识别标准.第1部分:缺陷分类
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects
NF B49-421:1990 耐火材料制品.铝矾土、硅质材料、碳化硅、碳和金属硅耐火材料制品的化学分析
Refractory products. Chemical analysis of aluminous, siliceous, silicon carbide, carbon and metallic silicon refractory products.
JB/T 58552-1999 机械密封用碳化硅密封环 产品质量分等
Product quality classification of silicon carbide sealing rings for mechanical seals
IEC 63068-2:2019 半导体器件.功率器件用碳化硅同质外延片中缺陷的损识别标准.第2部分:光学检验缺陷的试验方法
This part of IEC 63068 provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC
Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection
IEC 63068-4:2022 半导体器件 功率器件用碳化硅同质外延片缺陷的损识别标准 第4部分：使用梳子识别和评估缺陷的程序
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 4: Procedure for identifying and evaluating defects using a comb
18/30382424 DC BS IEC 63068-3 半导体器件 功率器件用碳化硅同质外延片缺陷损识别标准第3部分 光致发光缺陷测试方法
BS IEC 63068-3. Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices. Part 3. Test method for defects using photoluminescence
IEC 63068-3:2020 半导体器件.功率器件用碳化硅同质外延片中缺陷的损识别标准.第3部分:用光致发光法检测缺陷的试验方法
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence
SJ/T 11504-2015 碳化硅单晶抛光片表面质量的测试方法
本标准规定了碳化硅单晶抛光片(以下简称“抛光片”)表面质量的目视检验方法。本标准适用于单面或者双面抛光的碳化硅单晶抛光片表面质量的检测
Test method for measuring surface quality of polished monocrystalline silicon carbide
GB/T 32978-2016 碳化硅质高温陶瓷过滤元件
Silicon carbide high temperature ceramic filter element
YB/T 4349-2013 高炉用碳化硅-碳质捣打料
本标准规定了高炉用碳化硅-碳质捣打料的分类、技术要求、试验方法、质量评定程序、包装、标志、运输、储存及质量证明书。本标准适用于高炉冷却壁及相关部位用碳化硅-碳质捣打料
Silicon carbide-carbon ramming materials for blast furnace
T/IAWBS 007-2018 4H 碳化硅同质外延层厚度的红外反射测量方法
本标准规定了4H-N型重掺杂碳化硅衬底（N型掺杂浓度>5×1018 cm-3）上同质外延层（掺 杂浓度5×1014cm-3-5×1016 cm-3）厚度的红外反射测量方法。 本标准适用于2-100微米的碳化硅外延层。 本标准规定的方法是 4H 碳化硅衬底
Test method for thickness of 4H silicon carbide homo-epitaxial layers by infrared reflectance
BS IEC 63068-1:2019 半导体器件 功率器件用碳化硅同质外延片缺陷损识别标准 缺陷分类
What is BS IEC 63068-1 - Silicon carbide homoepitaxial wafer about? BS IEC 63068-1 is the first part of an international standard
Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Classification of defects
DB13/T 5118-2019 4H 碳化硅 N 型同质外延片通用技术要求
General technical requirements for 4H SiC N-type homoepitaxial wafers
BS IEC 63068-3:2020 半导体器件 功率器件用碳化硅同质外延片缺陷损识别标准光致发光缺陷测试方法
What is BS IEC 63068 ‑ 3 about? BS IEC 63068 ‑ 3 is the international standard for semiconductors devices that specifies
Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Test method for defects using photoluminescence
BS IEC 63068-2:2019 半导体器件 功率器件用碳化硅同质外延片缺陷损识别标准 光学检测缺陷测试方法
What is BS IEC 63068 ‑ 2 - Silicon carbide homoepitaxial (SiC) wafer about? BS IEC 63068 is a series of international
Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Test method for defects using optical inspection
IEC 63068-1:2019 半导体器件.功率器件用碳化硅同质外延片中缺陷的损识别标准.第1部分:缺陷分类
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects
NF B49-421:1990 耐火材料制品.铝矾土、硅质材料、碳化硅、碳和金属硅耐火材料制品的化学分析
Refractory products. Chemical analysis of aluminous, siliceous, silicon carbide, carbon and metallic silicon refractory products.
JB/T 58552-1999 机械密封用碳化硅密封环 产品质量分等
Product quality classification of silicon carbide sealing rings for mechanical seals
IEC 63068-2:2019 半导体器件.功率器件用碳化硅同质外延片中缺陷的损识别标准.第2部分:光学检验缺陷的试验方法
This part of IEC 63068 provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC
Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection
IEC 63068-4:2022 半导体器件 功率器件用碳化硅同质外延片缺陷的损识别标准 第4部分：使用梳子识别和评估缺陷的程序
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 4: Procedure for identifying and evaluating defects using a comb
18/30382424 DC BS IEC 63068-3 半导体器件 功率器件用碳化硅同质外延片缺陷损识别标准第3部分 光致发光缺陷测试方法
BS IEC 63068-3. Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices. Part 3. Test method for defects using photoluminescence
IEC 63068-3:2020 半导体器件.功率器件用碳化硅同质外延片中缺陷的损识别标准.第3部分:用光致发光法检测缺陷的试验方法
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence
SJ/T 11504-2015 碳化硅单晶抛光片表面质量的测试方法
本标准规定了碳化硅单晶抛光片(以下简称“抛光片”)表面质量的目视检验方法。本标准适用于单面或者双面抛光的碳化硅单晶抛光片表面质量的检测
Test method for measuring surface quality of polished monocrystalline silicon carbide
编辑：北检院编辑部
