GB 9595-1988 电子元器件详细规范 2CW412~473型硅电压调整二极管
SJ 20186-1992 半导体分立器件2CW2970～3015型硅电压调整二极管详细规范
Semiconductor discrete device--Detail specification for silicon voltage regulate diodes for Types 2CW2970～3015
SJ 50033/25-1994 半导体分立器件2CW1001～2CW1005型硅电压调整二极管详细规范
Semiconductor discrete device Detail specification for type 2CW1001～2CW1005 silicon voltage-regulator diode
SJ 50033/161-2002 半导体分立器件.2CW210～251型硅电压调整二极管.详细规范
Semiconductor discrete device Detail specification for silicon voltage-regulator diode for type 2CW210～251
SJ 20188-1992 半导体分立器件2CW3016～3051型电压调整二极管详细规范
Semiconductor discrete device--Detail specification for silicon voltage regulate diodes for Types 2CWl3016～3051
SJ 50033/162-2003 半导体分立器件2CW1022型硅双向电压调整二极管详细规范
Semiconductor discrete device Detail specification of type 2CW1022 for silicon bidirectional voltage regulator diodes
SJ 50033/26-1994 半导体分立器件.2CW1006～2CW1015型硅电压调整二极管详细规范
Semiconductor discrete device.Detail specification for type 2CW1006～2CW1015 silicon voltage-regulator diode
SJ/T 10993-1996 电子元器件详细规范 2CW380～411型硅电压调整二极管（可供认证用）
Detailed specifications for electronic components - 2CW380-411 voltage-regulating diodes (Applicable for certification)
SJ/T 10992-1996 电子元器件详细规范 2CW412～473型硅电压调整二极管（可供认证用）
Detailed specifications for electronic components - 2CW412-473 voltage-regulating diodes (Applicable for certification)
GB/T 6589-2002 半导体器件 分立器件 第3-2部分;信号(包括开关)和调整二极管电压调整二极管和电压基准二极管(不包括温度补偿精密基准二极管)空白详细规范
本空白详细规范是半导体器件的一系列空白详细规范之一，并应与下列国家标准和IEC标准一起使用。 GB／T12560--1999半导体器件分立器件分规范(idt IEC 60747—11：1985) IEC 60747—10(QC 700000)：1991 半导体器件第l0部分分立器件和
Semiconductor devices discrete devices Part 3-2: Signal (including switching) and regulator diodes blank detail specification for voltage-regulator diodes and voltage-reference diodes (excluding temperature-compensated precision reference diodes)
GB 9596-1988 电子元器件详细规范 2CW380~411型硅电压调整二极管(可供认证用)
SJ 50033/149-2000 半导体分立器件.2CW100～121型玻璃钝化封装硅电压调整二极管详细规范
Semiconductor discrete devices.Detail specification for type 2CW100～121 glass passivation package silicon voltage-requlator diodes
SJ 50033/144-1999 半导体分立器件.2CW50～78型玻璃钝化封装硅电压调整二极管详细规范
Semiconductor discrete devices.Detail specification for types 2CW50～78 glass passivation package Silicon voltage-regulator diodes
IEC 60747-3-2:1986 半导体器件 分立器件 第3部分:信号二极管(包括开关二极管)及调整二极管 第2节:电压调整二极管和电压基准二极管(不包括温度补偿精密基准二极管)空白详细规范
Applicable to quality assessment for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference
Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section Two: Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference d
GJB 33/006-1989 半导体分立器件 电压调整和电压基准二极管空白详细规范
GB 9595-1988 电子元器件详细规范 2CW412~473型硅电压调整二极管
SJ 20186-1992 半导体分立器件2CW2970～3015型硅电压调整二极管详细规范
Semiconductor discrete device--Detail specification for silicon voltage regulate diodes for Types 2CW2970～3015
SJ 50033/25-1994 半导体分立器件2CW1001～2CW1005型硅电压调整二极管详细规范
Semiconductor discrete device Detail specification for type 2CW1001～2CW1005 silicon voltage-regulator diode
SJ 50033/161-2002 半导体分立器件.2CW210～251型硅电压调整二极管.详细规范
Semiconductor discrete device Detail specification for silicon voltage-regulator diode for type 2CW210～251
SJ 20188-1992 半导体分立器件2CW3016～3051型电压调整二极管详细规范
Semiconductor discrete device--Detail specification for silicon voltage regulate diodes for Types 2CWl3016～3051
SJ 50033/162-2003 半导体分立器件2CW1022型硅双向电压调整二极管详细规范
Semiconductor discrete device Detail specification of type 2CW1022 for silicon bidirectional voltage regulator diodes
SJ 50033/26-1994 半导体分立器件.2CW1006～2CW1015型硅电压调整二极管详细规范
Semiconductor discrete device.Detail specification for type 2CW1006～2CW1015 silicon voltage-regulator diode
SJ/T 10993-1996 电子元器件详细规范 2CW380～411型硅电压调整二极管（可供认证用）
Detailed specifications for electronic components - 2CW380-411 voltage-regulating diodes (Applicable for certification)
SJ/T 10992-1996 电子元器件详细规范 2CW412～473型硅电压调整二极管（可供认证用）
Detailed specifications for electronic components - 2CW412-473 voltage-regulating diodes (Applicable for certification)
GB/T 6589-2002 半导体器件 分立器件 第3-2部分;信号(包括开关)和调整二极管电压调整二极管和电压基准二极管(不包括温度补偿精密基准二极管)空白详细规范
本空白详细规范是半导体器件的一系列空白详细规范之一，并应与下列国家标准和IEC标准一起使用。 GB／T12560--1999半导体器件分立器件分规范(idt IEC 60747—11：1985) IEC 60747—10(QC 700000)：1991 半导体器件第l0部分分立器件和
Semiconductor devices discrete devices Part 3-2: Signal (including switching) and regulator diodes blank detail specification for voltage-regulator diodes and voltage-reference diodes (excluding temperature-compensated precision reference diodes)
GB 9596-1988 电子元器件详细规范 2CW380~411型硅电压调整二极管(可供认证用)
SJ 50033/149-2000 半导体分立器件.2CW100～121型玻璃钝化封装硅电压调整二极管详细规范
Semiconductor discrete devices.Detail specification for type 2CW100～121 glass passivation package silicon voltage-requlator diodes
SJ 50033/144-1999 半导体分立器件.2CW50～78型玻璃钝化封装硅电压调整二极管详细规范
Semiconductor discrete devices.Detail specification for types 2CW50～78 glass passivation package Silicon voltage-regulator diodes
IEC 60747-3-2:1986 半导体器件 分立器件 第3部分:信号二极管(包括开关二极管)及调整二极管 第2节:电压调整二极管和电压基准二极管(不包括温度补偿精密基准二极管)空白详细规范
Applicable to quality assessment for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference
Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section Two: Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference d
GJB 33/006-1989 半导体分立器件 电压调整和电压基准二极管空白详细规范
编辑：北检院编辑部
