开关二极管检测

SJ 1229-1977 2AK1～20型锗开关二极管

Detail specification for germanium switching diodes,Type 2AK1~20

KS C 5213-1981(1997 保证可靠性小电流开关二极管

RELIABILITY ASSURED LOW CURRENT SWITCHING DIODES

BS IEC 60747-3:2013 半导体器件.分立器件:信号二极管、开关二极管及调整二极管

Semiconductor devices. Discrete devices: Signal, switching and regulator diodes

BS 9300 C534:1971 硅同轴电阻开关二极管详细规范

This Specification covers the detail requirements for a Silicon Coaxial Resistive Switching Diode and is in accordance with K1007 except where

Detail specification for silicon coaxial resistive switching diode

KS C IEC 60747-3-1:2006 半导体器件.分立器件.第3部分:信号二极管(包括开关二极管)和调节二极管.第1节:信号二极管、开关二极管和受控雪崩二极管空白详细规范

이 규격은 신호 다이오드, 스위칭 다이오드 및 제어 애벌란시 다이오드의 개별 규격 지침에

Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section one：Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes

IEC 60747-3-1:1986 半导体器件 分立器件 第3部分:信号二极管(包括开关二极管)及调整二极管 第1节:信号二极管、开关二极管和可控雪崩二极管空白详细规范

Applicable to quality assessment for signal diodes, switching diodes and controlled avalanche diodes. Gives specific requirements (included in QC

Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section One: Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes

JIS C7224-1980 有可靠性保证的低电流开关二极管

Reliability assured low current switching diodes

SJ 966-1975 硅开关二极管反向击穿电压的测试方法

Methods of measurement for reverse breakdown voltage of silicon switching diodes

DLA MIL-PRF-19500/256 C NOTICE 2-1999 1N643,1N662和1N663型硅制开关二极管半导体装置

SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N643, 1N662 AND 1N663

CSN 35 8768-1983 半导体开关二极管．电气参数测量方法

Schválenie ST SEV 3198-81 odporu?ilo Federálně ministerstvo elektrotechnického priemyslu. Spracovatel: TESLA Pie??any, koncernov? podnik

Semiconductor switching diodes. Electric parameters measurement methods

IEC 60747-3:2013 半导体器件.第3部分:分立器件:信号二极管、开关二极管及调整二极管

This part of IEC 60747 gives the requirements for the following devices: ?C signal diodes (excluding diodes designed to operate at frequencies above

Semiconductor devices - Part 3: Discrete devices: Signal, switching and regulator diodes

CSN 35 8766-1976 半导体器件．开关二极管．正向电压的测量

Spracovatel: Tesla Ro?nov, n. p'., závod Pie??any - Ján Gregori?ka Pracovník ??adu pre normalizáciu a meranie: pově?en? Ing. Václav Prusr - ?tátne

Semieonductor devices. Switching diodes. Measurement cf forward volíage.

SJ 20071-1992 半导体分立器件.2CK4148型硅开关二极管详细规范

Semiconductor discrete device.Detail specification for silicon switching diode for type 2CK4148

SJ 20069-1992 半导体分立器件.2CK76型硅开关二极管详细规范

Semiconductor discrete device.Detail specification for silicon switching diode for type 2CK76

SJ 20070-1992 半导体分立器件.2CK105型硅开关二极管详细规范

Semiconductor discrete device.Detail specification for silicon switching diode for type 2CK105

SJ 1229-1977 2AK1～20型锗开关二极管

Detail specification for germanium switching diodes,Type 2AK1~20

KS C 5213-1981(1997 保证可靠性小电流开关二极管

RELIABILITY ASSURED LOW CURRENT SWITCHING DIODES

BS IEC 60747-3:2013 半导体器件.分立器件:信号二极管、开关二极管及调整二极管

Semiconductor devices. Discrete devices: Signal, switching and regulator diodes

BS 9300 C534:1971 硅同轴电阻开关二极管详细规范

This Specification covers the detail requirements for a Silicon Coaxial Resistive Switching Diode and is in accordance with K1007 except where

Detail specification for silicon coaxial resistive switching diode

KS C IEC 60747-3-1:2006 半导体器件.分立器件.第3部分:信号二极管(包括开关二极管)和调节二极管.第1节:信号二极管、开关二极管和受控雪崩二极管空白详细规范

이 규격은 신호 다이오드, 스위칭 다이오드 및 제어 애벌란시 다이오드의 개별 규격 지침에

Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section one：Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes

IEC 60747-3-1:1986 半导体器件 分立器件 第3部分:信号二极管(包括开关二极管)及调整二极管 第1节:信号二极管、开关二极管和可控雪崩二极管空白详细规范

Applicable to quality assessment for signal diodes, switching diodes and controlled avalanche diodes. Gives specific requirements (included in QC

Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section One: Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes

JIS C7224-1980 有可靠性保证的低电流开关二极管

Reliability assured low current switching diodes

SJ 966-1975 硅开关二极管反向击穿电压的测试方法

Methods of measurement for reverse breakdown voltage of silicon switching diodes

DLA MIL-PRF-19500/256 C NOTICE 2-1999 1N643,1N662和1N663型硅制开关二极管半导体装置

SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N643, 1N662 AND 1N663

CSN 35 8768-1983 半导体开关二极管．电气参数测量方法

Schválenie ST SEV 3198-81 odporu?ilo Federálně ministerstvo elektrotechnického priemyslu. Spracovatel: TESLA Pie??any, koncernov? podnik

Semiconductor switching diodes. Electric parameters measurement methods

IEC 60747-3:2013 半导体器件.第3部分:分立器件:信号二极管、开关二极管及调整二极管

This part of IEC 60747 gives the requirements for the following devices: ?C signal diodes (excluding diodes designed to operate at frequencies above

Semiconductor devices - Part 3: Discrete devices: Signal, switching and regulator diodes

CSN 35 8766-1976 半导体器件．开关二极管．正向电压的测量

Spracovatel: Tesla Ro?nov, n. p'., závod Pie??any - Ján Gregori?ka Pracovník ??adu pre normalizáciu a meranie: pově?en? Ing. Václav Prusr - ?tátne

Semieonductor devices. Switching diodes. Measurement cf forward volíage.

SJ 20071-1992 半导体分立器件.2CK4148型硅开关二极管详细规范

Semiconductor discrete device.Detail specification for silicon switching diode for type 2CK4148

SJ 20069-1992 半导体分立器件.2CK76型硅开关二极管详细规范

Semiconductor discrete device.Detail specification for silicon switching diode for type 2CK76

SJ 20070-1992 半导体分立器件.2CK105型硅开关二极管详细规范

Semiconductor discrete device.Detail specification for silicon switching diode for type 2CK105